1. SEGR Study on Power MOSFETs: Multiple Impacts Assumption
- Author
-
Robert Ecoffet, J.C. Foy, M. Beaumel, B. Piquet, F. Pontoni, G. Salvaterra, C. Binois, Eric Lorfevre, Christian Poivey, Francoise Bezerra, G. Berger, L. Pater, T. Bouchet, Daniel Peyre, F. Sturesson, R. Mangeret, Institut de Physique Nucléaire d'Orsay (IPNO), Université Paris-Sud - Paris 11 (UP11)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), Grand Accélérateur National d'Ions Lourds (GANIL), Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)-Centre National de la Recherche Scientifique (CNRS), and Centre National de la Recherche Scientifique (CNRS)-Commissariat à l'énergie atomique et aux énergies alternatives (CEA)-Institut National de Physique Nucléaire et de Physique des Particules du CNRS (IN2P3)
- Subjects
heavy ions (H.I.) ,Nuclear and High Energy Physics ,Materials science ,single-event gate rupture (SEGR) ,Cumulative phenomenon ,01 natural sciences ,Fluence ,law.invention ,law ,0103 physical sciences ,MOSFET ,Electronic engineering ,Breakdown voltage ,Electrical and Electronic Engineering ,Power MOSFET ,multiple impacts ,010302 applied physics ,power MOSFET ,010308 nuclear & particles physics ,Transistor ,Semiconductor device ,Computational physics ,[SPI.TRON]Engineering Sciences [physics]/Electronics ,Nuclear Energy and Engineering ,13. Climate action ,Logic gate ,Field-effect transistor ,post-irradiation-gate-stress-test (PGST) - Abstract
The main emphasis of this study is the investigation of the gate degradation or rupture, aiming to determine the nature of the so-called SEGR phenomena. This article presents experimental data showing heavy ions induced gate degradation in power MOSFETs. In the experiments, backside and front-side irradiations are performed. The heavy ions ranges are tuned in such way to control whether they hit the gate or not, during backside irradiation. Gate-to-source current Igss (phi) is measured versus heavy ions (H.I.) fluence phi. Post-irradiation-gate-stress-test (PGST) allows to measure breakdown voltage VBD(phi) as being decreasing with (H.I.) fluence. Based on these experimental results, an hypothesis of substrate-generated ldquohot carriersrdquo impact overlap may explain gate degradation until SEGR triggering. This last hypothesis is supported by statistical approach model of heavy ions multiple impact.
- Published
- 2008
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