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The Schockley–Quisser (SQ) limit of 28.64% is distant from the Sb2S3 solar cells' record power conversion efficiency (PCE), which is 8.00%. Such poor efficiency is mostly owing to substantial interface-induced recombination losses caused by defects at the interfaces and misaligned energy levels. The endeavor of this study is to investigate an efficient Sb2S3 solar cell structure via accurate analytical modeling. The proposed model considers different recombination mechanisms such as non-radiative recombination, Sb2S3/CdS interface recombination, Auger, SRH, tunneling-enhanced recombination, and their combined impact on solar cell performance. This model is verified against experimental work (Glass/ITO/CdS/Sb2S3/Au) where a good coincidence is achieved. Several parameters effects such as thickness, doping, electronic affinity, and bandgap are scrutinized. The effect of both bulk traps located in CdS and Sb2S3 on the electrical outputs of the solar cell is analyzed thoroughly. Besides, a deep insight into the effect of interfacial traps on solar cell figures of merits is gained through shedding light into their relation with carriers' minority lifetime, diffusion length, and surface recombination velocity. Our research findings illuminate that the primary contributors to Sb2S3 degradation are interfacial traps and series resistance. Furthermore, achieving optimal band alignment by fine-tuning the electron affinity of CdS to create a Spike-like conformation is crucial for enhancing the immunity of the device versus the interfacial traps. In our study, the optimized solar cell configuration (Glass/ITO/CdS/Sb2S3/Au) demonstrates remarkable performance, including a high short-circuit current (JSC) of 47.9 mA/cm2, an open-circuit voltage (VOC) of 1.16 V, a fill factor (FF) of 54%, and a notable improvement in conversion efficiency by approximately 30% compared to conventional solar cells. Beyond its superior performance, the optimized Sb2S3 solar cell also exhibits enhanced reliability in mitigating interfacial traps at the CdS/Sb2S3 junction. This improved reliability can be attributed to our precise control of band alignment and the fine-tuning of influencing parameters. [ABSTRACT FROM AUTHOR]

[Display omitted] • An intensive light trapping formalism based on interdigitated Graphene electrodes (IGE) engineering and embedded Gold nanoparticles is proposed. • An optoelectronic framework based on the Maxwell–Garnet approach along with the term Percus – Yevick correction has been developed. • The obtained results have proved the role of proposed light trapping formalism in enhancing the MSM photodetector sensing capability. • The built model has been investigated as the MOGA approach's fitness function to identify the optimum design parameters. • The optimization framework has shown that an enhancement of about 47.9 % and 65% in terms of responsivity and time response. In this paper, a novel 4H-SiC metal–semiconductor-metal photodetector design based on Graphene electrode engineering and gold nanoparticles is proposed. The benefits of using an intense light trapping formalism to improve the optical performance of the 4H-SiC PD are investigated by means of an accurate optoelectronic model. The developed model is based on the EMT and avoids the difficulty of considering all nanoparticles. The precision assessment of the built model is carried out by comparison with the experimental data. The findings shed light on the ability of the proposed design to realize the dual task of reducing the unwanted shadowing effect and improving the absorption through Graphene electrode formalism and the Surface Plasmon Resonance effect in the 4H-SiC layer. Furthermore, to optimize the design sensing capability, the proposed model is adopted to formulate fitness functions for the multi-objective genetic algorithm. It is found that for a filling fraction of 0.02 and 7.5 nm radius, the optimized design yields 50 % increase in absorption compared to the standard designs where responsivity of 458 mA/W, PDCR of 3.05 × 106 and response time of 4.7 µs are achieved. These findings confirm the outstanding ability of the proposed design approach to boost up the PD active area for low-cost and high sensing capability, making it valuable for optoelectronic application. [ABSTRACT FROM AUTHOR]

This work aims to achieve an optimization of the TiO(2) and PMAPTAC concentrations in a chemical resistive-type humidity sensing mechanism (RHSM). Our idea is based primarily on the modeling of the sensing mechanism. This model takes into account the parameters of non-linearity, hysteresis, temperature, frequency, substrate type. Furthermore, we investigated the TiO(2) and PMAPTAC effects concentrations on the humidity sensing properties in our model. Secondly, we used the Matlab environment to create a database for an ideal model for the sensing mechanism, where the response of this ideal model is linear for any value of the above parameters. We have done the training to create an analytical model for the sensing mechanism (SM) and the ideal model (IM). After that, the SM and IM models are established on PSPICE simulator, where the output of the first is identical to the output of the RHSM used and the output of the last is the ideal response. Finally a "DIF bloc" was realized to make the difference between the SM output and the IM output, where this difference represents the linearity error, we take the minimum error, to identify the optimal TiO(2) and PMAPTAC concentrations. However, a compromise between concentrations, humidity and temperature must be performed. The simulation results show that in low humidity and at temperature more than 25 °C, sample 1 is the best (in alumina substrate). However, the sample 9 represents the best sensor (in PET substrate) predominately for the lowest humidity and temperature.