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In this study, we focus on the development of key processes towards wafer-scale 3-dimentional/vertical (3D) integration of Indium-Phosphide (InP) photonic membranes on InP electronics via adhesive bonding. First, we identified the most critical steps and optimized them to achieve high thermal and mechanical compatibility of components for the co-integration process. Next, we developed a strategy for InP-to-InP wafer bonding with high topology tolerance, and introduced hard benzocyclobutene (BCB) anchors to preserve the alignment and BCB thickness uniformity after bonding. The resulting bond layer is homogeneous in terms of physical and mechanical properties. Finally, we developed a novel method to selectively remove the InP substrate from the photonics side via wet etching while protecting the electronics carrier wafer with hermetic multi-layer coatings. The investigation of these key steps is essential for scalable 3D integration of photonics and electronics at ultra short distances (< $15 ~\mu \text{m}$). [ABSTRACT FROM AUTHOR]

This letter reports on a 108-GHz bandwidth 0.5- $\mu \text{m}$ InP DHBT analog-multiplexer-driver (AMUX-driver). To the best of the authors’ knowledge, this 2:1 AMUX-driver shows unprecedented 1.9-Vppd 160-GSa/s 160-GBd non-return-to-zero (NRZ) and 2.4-Vppd 100-GSa/s 100-GBd PAM-4 output swings, with very high-quality eye diagrams, without any digital signal processing (DSP) or postprocessing. Up to 3.2 Vppd is obtained in NRZ at 100 GBd. The lumped AMUX-driver also shows record 25.7-dB gain and 2.08-THz gain-bandwidth product with 11.1-dB equalizing capabilities at 86.6 GHz. [ABSTRACT FROM AUTHOR]

The strong potential of intersubband detectors in the field of mid-infrared photodetection places this technology as a relevant alternative to HgCdTe detectors in the race for ultrafast operation. While their extremely short photocarrier's lifetime opens up possibilities of detection beyond 100 GHz, it is also the main reason for their comparatively high dark current. Here, a photovoltaic quantum cascade detector at 10.3 μm, embedded in a metal–metal patch antenna is presented in both direct and heterodyne detection schemes. In DC, a responsivity of 122 mA/W at 77 K and 85 mA/W at 295 K is reached. More strikingly, the device shows temperature independent heterodyne response with a capacitance-limited cutoff frequency of 25 GHz both at 77 K and room temperature. It is modeled quantitatively by means of an equivalent RC-circuit picture stemming from microscopic transport considerations. [ABSTRACT FROM AUTHOR]

This Letter reports the design, fabrication and characterisation of a new differential linear driver, fabricated in the III-V Lab 0.7- ${\rm \mu }{\rm m}$μm emitter width indium phosphide (InP) double heterojunction bipolar transistor (DHBT) technology. Large-signal electrical characterisation shows 80-GBd symbol-rate four-level pulse amplitude (PAM-4) modulation conjugated with a driver output swing of 3-Vppdiff and a 0.74-W power consumption. Thus resulting in a 1.22-GBd driving efficiency, the highest in over 70-GBd drivers' state-of-the-art, at that date. Accordingly, S-parameter measurements of the standalone linear driver exhibit the highest gain-bandwidth product of 556 GHz, in that current state-of-the-art. [ABSTRACT FROM AUTHOR]

In this letter, a grounded coplanar waveguide-to-microstrip (GCPW-to-MS) transition without via holes is presented. The transition is designed on a PET® substrate and fabricated using inkjet printing technology. To our knowledge, fabrication of transitions using inkjet printing technology has not been reported in the literature. The simulations have been performed using HFSS® software and the measurements have been carried out using a Vector Network Analyzer on a broad frequency band from 40 to 85 GHz. The effect of varying several geometrical parameters of the GCPW-to-MS on the electromagnetic response is also presented. The results obtained demonstrate good characteristics of the insertion loss better than 1.5 dB, and return loss larger than 10 dB in the V-band (50–75 GHz). Such transitions are suitable for characterization of microwave components built on different flexible substrates. [ABSTRACT FROM PUBLISHER]

Atomic force spectroscopy and microscopy are invaluable tools to characterize nanostructures and biological systems. State-of-the-art experiments use resonant driving of mechanical probes, whose frequency reaches MHz in the fastest commercial instruments where cantilevers are driven at nanometer amplitude. Stiffer probes oscillating at tens of picometers provide a better access to short-range interactions, yielding images of molecular bonds, but they are little amenable to high-speed operation. Next-generation investigations demand combining very high frequency (>100 MHz) with deep sub-nanometer oscillation amplitude, in order to access faster (below microsecond) phenomena with molecular resolution. Here we introduce a resonating optomechanical atomic force probe operated fully optically at a frequency of 117 MHz, two decades above cantilevers, with a Brownian motion amplitude four orders below. Based on Silicon-On-Insulator technology, the very high frequency probe demonstrates single-pixel sensing of contact and non-contact interactions with sub-picometer amplitude, breaking open current limitations for faster and finer force spectroscopy.