1. A Novel MOS PROM Using a Highly Resistive Poly-Si Resistor
- Author
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N. Ieda, Y. Ohmori, M. Tanimoto, and J. Murota
- Subjects
Resistive touchscreen ,Fabrication ,Materials science ,Equivalent series resistance ,business.industry ,Electrical engineering ,Prom ,engineering.material ,Electronic, Optical and Magnetic Materials ,law.invention ,Polycrystalline silicon ,law ,Electrical resistivity and conductivity ,engineering ,Optoelectronics ,Electrical and Electronic Engineering ,Resistor ,business ,Voltage - Abstract
A novel MOS electrically programmable read-only memory (PROM) using a highly resistive polycrystalline silicon (poly-Si) resistor as a memory element is proposed. In a highly resistive poly-Si, a new memory effect of an irreversible resistivity transition, from an initial highly resistive value to a low resistive one, is observed. The dependencies of the transition voltage and current, which cause the transition, on the poly-Si deposition conditions, are studied, and the deposition conditions suitable for MOS PROM fabrication are obtained. The transition voltage V t can be reduced down to 10 V by decreasing the poly-Si film thickness to 0.4 µm. The transition current is less than 10 mA. A 36-bit MOS PROM, using the poly-Si resistor as a memory element, is fabricated. The programming voltage used in this work is 25 V and the programming time per bit is less than 10 µs. The read access time is less than 300 ns. The programming voltage, however, can be reduced down to 15 V by decreasing the poly-Si film thickness and the series resistance in the circuit. The novel PROM has another advantage in that the poly-Si resistor is compatible with a conventional silicon-gate process.
- Published
- 1980