1. Gate-tunable metafilm absorber based on indium silicon oxide
- Author
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Zhao Hongwei, Zhang Ran, Chorsi Hamid T., Britton Wesley A., Chen Yuyao, Iyer Prasad P., Schuller Jon A., Negro Luca Dal, and Klamkin Jonathan
- Subjects
metafilm ,indium silicon oxide ,metamaterials ,metasurface ,Physics ,QC1-999 - Abstract
In this work, reconfigurable metafilm absorbers based on indium silicon oxide (ISO) were investigated. The metafilm absorbers consist of nanoscale metallic resonator arrays on metal-insulator-metal (MIM) multilayer structures. The ISO was used as an active tunable layer embedded in the MIM cavities. The tunable metafilm absorbers with ISO were then fabricated and characterized. A maximum change in the reflectance of 57% and up to 620 nm shift in the resonance wavelength were measured.
- Published
- 2019
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