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Atomically thin, mechanically flexible, memory‐functional, and power‐generating crystals play a crucial role in the technological advancement of portable devices. However, the adoption of these crystals in such technologies is sometimes impeded by expensive and laborious synthesis methods, as well as the need for large‐scale, mechanically stable, and air‐stable materials. Here, an instant‐in‐air liquid metal printing process utilizing liquid bismuth (Bi) is presented, forming naturally occurring, air‐stable, atomically thin, mechanically flexible nanogenerators and ferroelectric oxides. Despite the centrosymmetric nature of the monoclinic P21/c system of achieved α‐Bi2O3‐δ the high kinetics of liquid metal synthesis leads to the formation of vacancies that disrupt the symmetry which is confirmed by density functional theory (DFT) calculations. The polarization switching is measured and utilized for ferroelectric nanopatterning. The exceptional attributes of these atomically thin multifunctional stable oxides, including piezoelectricity, mechanical flexibility, and polarizability, present significant opportunities for developing nano‐components that can be seamlessly integrated into a wide range of devices. [ABSTRACT FROM AUTHOR]

Liquid metal‐based printing techniques are emerging as an exemplary platform for harvesting non‐layered 2D materials with a thickness down to a few nanometres, leading to an ultra‐large surface‐area‐to‐volume ratio that is ideal for sensing applications. In this work, the synthesis of 2D tin dioxide (SnO2) by exfoliating the surface oxide of molten tin is reported which highlights the enhanced sensing capability of the obtained materials to ammonia (NH3) gas is reported. It is demonstrated that amperometric gas sensors based on liquid metal‐derived 2D SnO2 nanosheets can achieve excellent NH3 sensing performance at low temperature (150 °C) with and without UV light assistance. Detection over a wide range of NH3 concentrations (5–500 ppm) is observed, revealing a limit of detection at the parts per billion (ppb) level. The 2D SnO2 nanosheets also feature excellent cross‐interference performance toward different organic and inorganic gas species, showcasing a high selectivity. Further, ab initio DFT calculations reveal the NH3 adsorption mechanism is dominated by chemisorption with a charge transfer into 2D SnO2 nanosheets. In addition, a proof of concept for prototype flexible ammonia sensors is demonstrated by depositing 2D SnO2 on a polyimide substrate, signifying the high potential of employing liquid metal printed SnO2 for realizing wearable gas sensors. [ABSTRACT FROM AUTHOR]

Bacterial infections account for countless deaths globally. Antibiotics are the primary countermeasure; however, the alarming spread of antibiotic‐resistant strains necessitates alternative solutions. Silver and silver compounds have emerged as promising antibacterial agents. However, issues related to cytotoxicity and genotoxicity of silver remain concern. To overcome these challenges, this proposes an easy‐to‐control and straightforward method to synthesize novel Silver─gallium (Ag─Ga) nano‐amalgamated particles. Gallium liquid metal (GaLM) is used to facilitate the galvanic deposition of silver nanocrystals (Ag) on oxide layer. The GaLM not only serves as a carrier for silver through the galvanic replacement process, but also provides a controlled‐release mechanism for silver, in this way improving biocompatibility, reducing inflammation, and stimulating bone growth. Notably, Ag─Ga suspensions can be conveniently deposited by spray‐coating on a range of devices and material surfaces, effectively eliminating pathogenic bacteria with efficacy comparable to that of silver ions. In vivo studies in rat models affirm the antibacterial capabilities, especially against methicillin‐resistant Staphylococcus aureus and Escherichia coli, when placed on implants such as titanium rods and magnesium discs. Furthermore, Ag─Ga promotes bone matrix formation and collagen growth without eliciting an inflammatory response, indicating a major promise for coatings on a wide variety of biomedical devices and materials. [ABSTRACT FROM AUTHOR]

Liquid metal nanodroplets are an emerging class of underexplored materials with significant potential in many applications, including catalysis, bio‐therapeutics, and phase‐change materials. These nanostructures are generally synthesized by mechanical agitation via ultrasonication of low‐melting metals like Ga. Once these materials are successfully synthesized, they can be suspended in a vast array of different solvents. However, one major issue arises specifically with liquid metal alloys which are found to de‐alloy in the sonication process. Here, it is demonstrated that this challenge can be overcome by undertaking sonication at high temperatures, suspending nanodroplets within molten sodium acetate (NaOAc). After cooling, the nanostructures become planet‐like nanodroplets which are covered by an interfacial oxide crust, feature a liquid metal mantle, and a solid core. The molten salt solvent can effectively be removed rendering this approach to be ideal, especially for catalysts. The proof‐of‐concept application is demonstrated by carrying out electrocatalytic ethanol oxidation, using the Cu–Ga system. The superior performance of the Cu–Ga nanodroplets highlights potential in catalyzing a vast array of reactions. Aside from the Cu–Ga system, this facile process can be applied to multiple other systems, including Ag–Ga, Zn–Ga, Bi–Ga, In–Cu, and Sn–Cu. [ABSTRACT FROM AUTHOR]

The synthesis of nanometer‐thick (≈3 nm) gallium oxynitride (GaOxNy) layers with a variable stoichiometry is reported. The approach primarily exploits the liquid metal chemistry (LMC) technique and promises easier integration of 2D materials onto photonic devices compared to traditional top‐down and bottom‐up methods. The fabrication follows a two‐step process, involving first liquid metal‐based printing of a nanometer‐thick layer of gallium oxide (Ga2O3), followed a plasma‐enhanced nitridation reaction. Control over nitridation parameters (plasma power, exposure time) allows adjustment of the GaOxNy layer's composition, granting access to compounds with distinct optical properties (e.g., a 20% index variation), as demonstrated by ellipsometry and density functional theory (DFT) simulations. DFT provides a microscopic understanding of the effect of the bond polarization and crystallinity on the optical properties of GaOxNy compounds. These findings expand the knowledge of ultrathin GaOxNy alloys, which are poorly studied with respect to their gallium nitride (GaN) and Ga2O3 counterparts. They also represent an essential step toward integrating such 2D materials into photonic chips and offer new opportunities to improve the performance of hybrid optoelectronic devices. [ABSTRACT FROM AUTHOR]

One of the key requirements to emulate synaptic features in optoelectronic devices is the presence of persistent photoconductivity (PPC). While there are several visible-active materials, transparent semiconducting oxides (TSOs) have commercially established production processes and applications. Despite the inherently exceptional optoelectronic properties in many atomically thin TSOs along with PPC, their wide band gap renders them feasible only for ultraviolet (UV)-active synaptic applications. Hence, approaches need to be developed that allow one to tailor such semiconductors for visible-active optoelectronic synapses that are a strong emerging area of research. Over the past few years, liquid metal (LM) printing techniques have enabled the realization of many nonstratified oxides in an atomically thin form, resulting in oxide systems with enhanced optoelectronic performances, which can be further engineered using postsynthesis processing techniques. Here, we utilize a nonlayered ultrathin oxide, indium oxide (In2O3), engineered to demonstrate a photoelectrical response in the visible spectrum with a peak responsivity of 6.67 × 103 A/W at 455 nm. The 2.2 nm thin sheets operating under a driving voltage of 200 mV are successfully able to detect short pulses under 500 ms while showcasing PPC characteristics without additional bias. Key synaptic and multisynaptic functionalities are replicated using blue and green light sources, demonstrating a viable pathway to integrate atomically thin oxide semiconductors for visible light-active optoelectronic synaptic applications. [ABSTRACT FROM AUTHOR]

Miniaturization and energy consumption by computational systems remain major challenges to address. Optoelectronics based synaptic and light sensing provide an exciting platform for neuromorphic processing and vision applications offering several advantages. It is highly desirable to achieve single‐element image sensors that allow reception of information and execution of in‐memory computing processes while maintaining memory for much longer durations without the need for frequent electrical or optical rehearsals. In this work, ultra‐thin (<3 nm) doped indium oxide (In2O3) layers are engineered to demonstrate a monolithic two‐terminal ultraviolet (UV) sensing and processing system with long optical state retention operating at 50 mV. This endows features of several conductance states within the persistent photocurrent window that are harnessed to show learning capabilities and significantly reduce the number of rehearsals. The atomically thin sheets are implemented as a focal plane array (FPA) for UV spectrum based proof‐of‐concept vision system capable of pattern recognition and memorization required for imaging and detection applications. This integrated light sensing and memory system is deployed to illustrate capabilities for real‐time, in‐sensor memorization, and recognition tasks. This study provides an important template to engineer miniaturized and low operating voltage neuromorphic platforms across the light spectrum based on application demand. [ABSTRACT FROM AUTHOR]

Optoelectronic devices based on optically responsive materials have gained significant attention due to their low cross talk and reduced power consumption. These devices rely on light‐induced changes in conductance states, which are used to create synaptic weights for image recognition tasks in neural networks. However, a major drawback of such devices is the rapid decay of conductance states after light stimulus removal, which hinders their long‐term memory and performance without a continuous external stimulus in place. To address this issue, a platform neural network scheme is proposed to counter the natural decay of conductance in optoelectronic devices. The approach restores the memory effect of the devices and significantly enhances their performance by several orders of magnitude without using additional energy‐intensive techniques like training pulses or gate fields. Herein, the model is validated experimentally using optoelectronic devices fabricated with two different materials, BP and doped In2O3, and demonstrates the restoration of memory/image retention ability to any material system being studied for optoelectronic synapses and vision. This approach has important implications for the practical application of neuromorphic visual processing technologies, bringing them closer to real‐world applications. [ABSTRACT FROM AUTHOR]

The emergence of liquid metal catalysts endows electrocatalytic processes with enhanced efficiencies by eliminating coking issues that rapidly deactivate conventional solid catalysts. Alloying them with trace amounts of redox-active metal additives can further improve their catalytic activity. Here we report a vanadium-liquid metal alloy with superior activity that can drive electrochemical reduction of CO2 into solid carbon. The reaction mechanism has been thoroughly investigated and discussed. In addition, artificial neural networks trained by machine learning have been demonstrated to be powerful in predicting performance of LM alloys with various compositions. [ABSTRACT FROM AUTHOR]

Thin film transistors (TFTs) are key components for the fabrication of electronic and optoelectronic devices, resulting in a push for the wider exploration of semiconducting materials and cost‐effective synthesis processes. In this report, a simple approach is proposed to achieve 2‐nm‐thick indium oxide nanosheets from liquid metal surfaces by employing a squeeze printing technique and thermal annealing at 250 °C in air. The resulting materials exhibit a high degree of transparency (>99 %) and an excellent electron mobility of ≈96 cm2 V−1 s−1, surpassing that of pristine printed 2D In2O3 and many other reported 2D semiconductors. UV‐detectors based on annealed 2D In2O3 also benefit from this process step, with the photoresponsivity reaching 5.2 × 104 and 9.4 × 103 A W−1 at the wavelengths of 285 and 365 nm, respectively. These values are an order of magnitude higher than for as‐synthesized 2D In2O3. Utilizing transmission electron microscopy with in situ annealing, it is demonstrated that the improvement in device performances is due to nanostructural changes within the oxide layers during annealing process. This work highlights a facile and ambient air compatible method for fabricating high‐quality semiconducting oxides, which will find application in emerging transparent electronics and optoelectronics. [ABSTRACT FROM AUTHOR]

In this study, a eutectic gallium–indium (EGaIn) alloy and graphene nanoplatelets (GnPs) were employed as reinforcements for a comonomer vinyl ester (cVE) resin at different weight fractions up to 2% via a direct polymerization process. First, the effect of EGaIn on the curing kinetics of cVE was evaluated. The thermal and mechanical properties, and the fracture toughness of two types of cVE composites consisting of EGaIn and GnPs were then studied. The results showed that sub-micron sized EGaIn (≤1 wt.%) could promote the curing reaction of cVE without changing the curing mechanism. However, with further increases in EGaIn loading between 1 and 2 wt.%, the curing reaction rate tends to decrease. Both EGaIn and GnPs showed a significant enhancement in strengthening and toughening the cVE matrix with the presence of filler loading up to 1 wt.%. EGaIn was more effective than GnPs in promoting the flexural and impact strength. An increase of up to 50% and 32% were recorded for these mechanical properties, when EGaln was used, as compared to 46%, and 18% for GnPs, respectively. In contrast, the GnPs/cVE composites exhibited a greater improvement in the fracture toughness and fracture energy by up to 50% and 56% in comparison with those of the EGaIn/cVE ones by up to 32% and 39%, respectively. Furthermore, the stiffness of both the EgaIn/cVE and GnPs/cVE composites showed a significant improvement with an increase of up to 1.76 and 1.83 times in the normalized storage modulus, respectively, while the glass transition temperature (Tg) values remained relatively constant. This work highlights the potential of EGaIn being employed as a filler in creating high-performance thermoset composites, which facilitates its widening applications in many structural and engineering fields, where both higher toughness and stiffness are required. [ABSTRACT FROM AUTHOR]

Wide bandgap semiconducting oxides are emerging as potential 2D materials for transparent electronics and optoelectronics. This fuels the quest for discovering new 2D metal oxides with ultrahigh transparency and high mobility. While the former can be achieved by reducing the thickness of oxide films to only a few nanometers, the latter is more commonly realized by intentional doping. This article reports a one‐step synthesis of few‐unit‐cell‐thick and laterally large antimony‐doped indium oxide (IAO). The doping process occurs spontaneously when the oxide is grown on the surface of a molten Sb–In alloy and 2D IAO nanosheets can be easily printed onto desired substrates. With thicknesses at the atomic scale, these materials exhibit excellent transparency exceeding 98% across the visible and near‐infrared range. Field‐effect transistors based on low‐doped IAO nanosheets reveal a high electron mobility of ≈40 cm2 V−1 s−1. Additionally, a notable photoresponse is observed in 2D IAO‐based photodetectors under ultraviolet (UV) radiation. Photoresponsivities of low‐doped and highly doped IAO at a wavelength of 285 nm are found to be 1.2 × 103 and 0.7 × 103 A W−1, respectively, identifying these materials as promising candidates for the fabrication of high‐performance optoelectronics in the UV region. [ABSTRACT FROM AUTHOR]

The surfaces of liquid metals can serve as a platform to synthesise two-dimensional materials. By exploiting the self-limiting Cabrera-Mott oxidation reaction that takes place at the surface of liquid metals exposed to ambient air, an ultrathin oxide layer can be synthesised and isolated. Several synthesis approaches based on this phenomenon have been developed in recent years, resulting in a diverse family of functional 2D materials that covers a significant fraction of the periodic table. These straightforward and inherently scalable techniques may enable the fabrication of novel devices and thus harbour significant application potential. This review provides a brief introduction to liquid metals and their alloys, followed by detailed guidance on each developed synthesis technique, post-growth processing methods, integration processes, as well as potential applications of the developed materials. [ABSTRACT FROM AUTHOR]

We investigate the effects of direct deposition of different dielectric materials (AlOx, SiOx, SiNx) onto atomically thin TMDC WS2 on its optical response using atomic layer deposition (ALD), electron beam evaporation (EBE), plasma-enhanced chemical vapor deposition (PECVD), and magnetron sputtering. The photoluminescence measurements reveal quenching of the excitonic emission after all deposition processes, which is linked to the increased level of charge doping and associated rise of the trion emission and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes in excitonic emission with the increased levels of lattice disorder and defects. In particular, we show that the different doping levels in a monolayer WS2 capped by a dielectric material are strongly related to the defects in the WS2 crystal introduced by all capping methods, except for ALD. The strong charge doping in the ALD-capped sample seems to be caused by other factors, such as deviations in the dielectric layer stoichiometry or chemical reactions on the monolayer surface, which makes ALD distinct from all other techniques. Overall, the EBE process results in the lowest level of doping and defect densities and in the largest spectral weight of the exciton emission in the PL. Sputtering is revealed as the most aggressive dielectric capping method for WS2, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS2, which can provide valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices. [ABSTRACT FROM AUTHOR]

Metal oxychalcogenides are emerging as a new motif of group VI-A semiconductors with unique electronic properties. Among this family, two dimensional (2D) oxysulfide materials have been increasingly involved in the development of next-gen electronic and optoelectronic devices. However, current synthesis routes for 2D metal oxysulfides are still limited to vapor phase deposition techniques, hindering access to ultra-thin, well-defined, and highly crystalline structures. Herein, we report a new synthesis approach for atomically thin and large-area indium oxysulfide nanosheets (2D In2O3−xSx, x is from 0 to 0.41). The process consists of printing indium oxide skins out of molten indium metal and a subsequent sulfur insertion conducted in a trisulfur radical anion solution. Back-gated field-effect transistors (FETs) based on 2D In2O3−xSx reveal a notably high electron mobility of ∼20.4 cm2 V−1 s−1, corresponding to approximately 270% mobility enhancement over as-synthesized indium oxide. In addition, 2D In2O3−xSx based photodetectors exhibit an excellent performance in ultraviolet (UV) region, with a photoresponsivity of ∼3.4 × 103 A W−1 greatly surpassing that of many commercial materials. More importantly, the same reaction parameters can be employed to obtain 2D bismuth oxysulfide and 2D tin oxysulfide, offering a furnace-free approach for 2D oxysulfide semiconductor fabrication. [ABSTRACT FROM AUTHOR]

We investigate the effects of direct deposition of different dielectric materials (AlOx, SiOx, SiNx) onto atomically thin TMDC WS2 on its optical response using atomic layer deposition (ALD), electron beam evaporation (EBE), plasma-enhanced chemical vapor deposition (PECVD), and magnetron sputtering. The photoluminescence measurements reveal quenching of the excitonic emission after all deposition processes, which is linked to the increased level of charge doping and associated rise of the trion emission and/or the localized (bound) exciton emission. Furthermore, Raman spectroscopy allows us to clearly correlate the observed changes in excitonic emission with the increased levels of lattice disorder and defects. In particular, we show that the different doping levels in a monolayer WS2 capped by a dielectric material are strongly related to the defects in the WS2 crystal introduced by all capping methods, except for ALD. The strong charge doping in the ALD-capped sample seems to be caused by other factors, such as deviations in the dielectric layer stoichiometry or chemical reactions on the monolayer surface, which makes ALD distinct from all other techniques. Overall, the EBE process results in the lowest level of doping and defect densities and in the largest spectral weight of the exciton emission in the PL. Sputtering is revealed as the most aggressive dielectric capping method for WS2, fully quenching its optical response. Our results demonstrate and quantify the effects of direct deposition of dielectric materials onto monolayer WS2, which can provide valuable guidance for the efforts to integrate monolayer TMDCs into functional optoelectronic devices. [ABSTRACT FROM AUTHOR]