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Your search keyword '"Odedeyi, Temitope"' showing total 3 results
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3 results on '"Odedeyi, Temitope"'

1. Distributed circuit analysis and design for ultra-wideband communication and sub-mm wave applications

Author

Odedeyi, Temitope Oluseun

Subjects
621.3815
Abstract

This thesis explores research into new distributed circuit design techniques and topologies, developed to extend the bandwidth of amplifiers operating in the mm and sub-mm wave regimes, and in optical and visible light communication systems. Theoretical, mathematical modelling and simulation-based studies are presented, with detailed designs of new circuits based on distributed amplifier (DA) principles, and constructed using a double heterojunction bipolar transistor (DHBT) indium phosphide (InP) process with fT =fmax of 350/600 GHz. A single stage DA (SSDA) with bandwidth of 345 GHz and 8 dB gain, based on novel techniques developed in this work, shows 140% bandwidth improvement over the conventional DA design. Furthermore, the matrix-single stage DA (M-SSDA) is proposed for higher gain than both the conventional DA and matrix amplifier. A two-tier M-SSDA with 14 dB gain at 300 GHz bandwidth, and a three-tier M-SSDA with a gain of 20 dB at 324 GHz bandwidth, based on a cascode gain cell and optimized for bandwidth and gain flatness, are presented based on full foundry simulation tests. Analytical and simulation-based studies of the noise performance peculiarities of the SSDA and its multiplicative derivatives are also presented. The newly proposed circuits are fabricated as monolithic microwave integrated circuits (MMICs), with measurements showing 7.1 dB gain and 200 GHz bandwidth for the SSDA and 12 dB gain at 170 GHz bandwidth for the three-tier M-SSDA. Details of layout, fabrication and testing; and discussion of performance limiting factors and layout optimization considerations are presented. Drawing on the concept of artificial transmission line synthesis in distributed amplification, a new technique to achieve up to three-fold improvement in the modulation bandwidth of light emitting diodes (LEDs) for visible light communication (VLC) is introduced. The thesis also describes the design and application of analogue pre-emphasis to improve signal-to-noise ratio in bandwidth limited optical transceivers.

Published
2020

2. Impact of Analog and Digital Pre-Emphasis on the Signal-to-Noise Ratio of Bandwidth-Limited Optical Transceivers.

Author

Zhou, Zichuan, Odedeyi, Temitope, Kelly, Brian, O'Carroll, John, Phelan, Richard, Darwazeh, Izzat, and Liu, Zhixin

Abstract

The ever-growing machine-to-machine traffic in data centers has stimulated the increase of transceiver data rate from 25 Gb/s/λ to 100 Gb/s/λ and beyond. It is believed that advanced modulation formats and digital-to-analog converters (DACs) will be employed in next generation short-reach transceivers. Digital pre-emphasis techniques are widely employed in DAC-based transceivers to compensate for the high frequency roll-off due to the RF and optoelectronics components in optical transceivers. However, digital pre-emphasis essentially reduces the magnitude of the signal low frequency components for a flat frequency response, which unavoidably increases quantization error, reducing the overall signal-to-noise ratio. This trade-off between SNR and bandwidth conflicts with the high SNR requirement of advanced modulation formats such as the Nyquist-shaped pulse amplitude modulation (PAM). To mitigate the quantization error induced SNR degradation, we show that analog pre-emphasis filters can be used in conjunction with digital pre-emphasis for improved system performance. To understand the impact of the analog pre-emphasis filter on system performance, we analyze the relationship between the flatness of the system frequency response and the SNR degradation due to digital pre-emphasis, and demonstrate 1.1-dB increase of receiver sensitivities, for both 64-Gb/s and 128-Gb/s intensity-modulation direct detection (IM-DD) PAM4 signals, respectively employing a directly modulated laser (DML) and an electroabsorption modulator (EAM). [ABSTRACT FROM AUTHOR]

Published
2020
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3. InP DHBT Single-Stage and Multiplicative Distributed Amplifiers for Ultra- Wideband Amplification.

Author

Odedeyi, Temitope, Giannakopoulos, Stavros, Zirath, Herbert, and Darwazeh, Izzat

Subjects
*MONOLITHIC microwave integrated circuits, *ULTRA-wideband devices, *HETEROJUNCTION bipolar transistors, *INDIUM phosphide
Abstract

This paper highlights the gain-bandwidth merit of the single stage distributed amplifier (SSDA) and its derivative multiplicative amplifier topologies (i.e. the cascaded SSDA (C-SSDA) and the matrix SSDA (M-SSDA)), for ultra-wideband amplification. Two new monolithic microwave integrated circuit (MMIC) amplifiers are presented: an SSDA MMIC with 7.1dB average gain and 200GHz bandwidth; and the world’s first M-SSDA, which has a 12dB average gain and 170GHz bandwidth. Both amplifiers are based on an Indium Phosphide DHBT process with 250nm emitter width. To the authors best knowledge, the SSDA has the widest bandwidth for any single stage amplifier reported to date. Furthermore, the three tier M-SSDA has the highest bandwidth and gain-bandwidth product for any matrix amplifier reported to date. [ABSTRACT FROM AUTHOR]

Published
2020
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