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14. Enhanced ferroelectric properties of BiFeO3 thin films utilizing four buffer layers: Nd2O3, Eu2O3, Ho2O3, and Er2O3.

Author

Pan, Tung-Ming, Chen, Zhong-Yi, and Her, Jim-Long

Subjects
*BUFFER layers, *X-ray photoelectron spectroscopy, *ATOMIC force microscopes, *THIN films, *STRAY currents
Abstract

This paper investigates the ferroelectric and structural properties of BiFeO3 thin films with four different RE2O3 (Nd2O3, Eu2O3, Ho2O3, and Er2O3) buffer layers fabricated on a SrRuO3/n+-Si substrate through spin-coating. To analyze the BiFeO3 films with RE2O3 buffer layers, various techniques, such as X-ray diffraction, secondary ion mass spectrometry, atomic force microscope, and X-ray photoelectron spectroscopy were employed to investigate the crystalline structures, depth profiles, surface topographies, and chemical compositions. It was found that the BiFeO3 film with RE2O3 buffer layers exhibited improved electrical properties such as leakage current, remnant polarization, and coercive field compared to the control BiFeO3 film without a buffer layer. Moreover, the Eu2O3 buffer layer exhibited the lowest leakage current of 2.05 × 10–6 A/cm2, the highest remnant polarization of 43.76 μC/cm2, and the smallest coercive field of 188 kV/cm among all the RE2O3 buffer layers. The outcome is likely to have been caused by the introduction of Eu3+ ion to the BiFeO3 film, which resulted in a reduction in surface roughness, a significant preferred orientation of (110), and an increased concentration of Fe3+ ion. Consequently, this inhibited the fluctuation of Fe3+ to Fe2+ ions and reduced the occurrence of oxygen vacancies. [ABSTRACT FROM AUTHOR]

Published
2024
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15. Enhanced ferroelectric properties of BiFeO3 thin films utilizing four buffer layers: Nd2O3, Eu2O3, Ho2O3, and Er2O3.

Author

Pan, Tung-Ming, Chen, Zhong-Yi, and Her, Jim-Long

Subjects
BUFFER layers, X-ray photoelectron spectroscopy, ATOMIC force microscopes, THIN films, STRAY currents
Abstract

This paper investigates the ferroelectric and structural properties of BiFeO3 thin films with four different RE2O3 (Nd2O3, Eu2O3, Ho2O3, and Er2O3) buffer layers fabricated on a SrRuO3/n+-Si substrate through spin-coating. To analyze the BiFeO3 films with RE2O3 buffer layers, various techniques, such as X-ray diffraction, secondary ion mass spectrometry, atomic force microscope, and X-ray photoelectron spectroscopy were employed to investigate the crystalline structures, depth profiles, surface topographies, and chemical compositions. It was found that the BiFeO3 film with RE2O3 buffer layers exhibited improved electrical properties such as leakage current, remnant polarization, and coercive field compared to the control BiFeO3 film without a buffer layer. Moreover, the Eu2O3 buffer layer exhibited the lowest leakage current of 2.05 × 10–6 A/cm2, the highest remnant polarization of 43.76 μC/cm2, and the smallest coercive field of 188 kV/cm among all the RE2O3 buffer layers. The outcome is likely to have been caused by the introduction of Eu3+ ion to the BiFeO3 film, which resulted in a reduction in surface roughness, a significant preferred orientation of (110), and an increased concentration of Fe3+ ion. Consequently, this inhibited the fluctuation of Fe3+ to Fe2+ ions and reduced the occurrence of oxygen vacancies. [ABSTRACT FROM AUTHOR]

Published
2024
Full Text
View/download PDF

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