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Fluorophores emitting in the NIR-IIb wavelength range (1.5 micron - 1.7 micron) show great potential for bioimaging due to their large tissue penetration. However, current fluorophores suffer from poor emission with quantum yields ~2% in aqueous solvents. In this work, we report the synthesis of HgSe/CdSe core/shell quantum dots emitting at 1.7 microns through the interband transition. Growth of a thick shell led to a drastic increase in the photoluminescence quantum yield, with a value of 55% in nonpolar solvents. The quantum yields of our QDs and other reported QDs are explained well by a model of Forster resonance energy transfer to ligands and solvent molecules. The model predicts a quantum yield >6% when these HgSe/CdSe QDs are solubilized in water. Our work demonstrates the importance of a thick type-I shell to obtain bright emission in the NIR-IIb region, Main text: 9 pages, 4 figures. Supplementary Information: 31 pages, 21 figures

A procedure is developed for the growth of thick, conformal CdS shells that preserve the optical properties of 5 nm HgSe cores. The n-doping of the HgSe/CdS core/shell particles is quantitatively tuned through a simple postsynthetic Cd treatment, while the doping is monitored via the intraband optical absorption at 5 μm wavelength. Photoluminescence lifetime and quantum yield measurements show that the CdS shell greatly increases the intraband emission intensity. This indicates that decoupling the excitation from the environment reduces the nonradiative recombination. We find that weakly n-type HgSe/CdS are the brightest solution-phase mid-infrared chromophores reported to date at room temperature, achieving intraband photoluminescence quantum yields of 2%. Such photoluminescence corresponds to intraband lifetimes in excess of 10 ns, raising important questions about the fundamental limits to achievable slow intraband relaxation in quantum dots.

Colloidal quantum wells are two-dimensional materials grown with atomically-precise thickness that dictates their electronic structure. Although intersubband absorption in epitaxial quantum wells is well-known, analogous observations in non-epitaxial two-dimensional materials are sparse. Here we show that CdSe nanoplatelet quantum wells have narrow (30–200 meV), polarized intersubband absorption features when photoexcited or under applied bias, which can be tuned by thickness across the near-infrared (NIR) spectral window (900–1600 nm) inclusive of important telecommunications wavelengths. By examination of the optical absorption and polarization-resolved measurements, the NIR absorptions are assigned to electron intersubband transitions. Under photoexcitation, the intersubband features display hot carrier and Auger recombination effects similar to excitonic absorptions. Sequenced two-color photoexcitation permits the sub-picosecond modulation of the carrier temperature in such colloidal quantum wells. This work suggests that colloidal quantum wells may be promising building blocks for NIR technologies., Multiple infrared lasing and detection technologies exploit intersubband transitions of epitaxial quantum wells, but such transitions are mainly limited to the mid-infrared. Here, the authors report narrow, polarized intersubband transitions up to telecom wavelengths in CdSe colloidal quantum wells.

HgTe colloidal quantum dots are synthesized with high monodispersivity with sizes up to ∼15 nm corresponding to a room temperature absorption edge at ∼5 μm. The shape is tetrahedral for larger sizes and up to five peaks are seen in the absorption spectra with a clear size dependence. The size range of the HgTe quantum dots is extended to ∼20 nm using regrowth. The corresponding room temperature photoluminescence and absorption edge reach into the long-wave infrared, past 8 μm. Upon cooling to liquid nitrogen temperature, a photoconductive response is obtained in the long-wave infrared region up to 12 μm. Configuration-interaction tight-binding calculations successfully explain the spectra and the size dependence. The five optical features can be assigned to sets of single hole to single electron transitions whose strengths are strongly influenced by the multiband/multiorbital character of the quantum-dot electronic states.

International audience; Colloidal quantum dots (CQDs) with mid-infrared (IR) tunable bandgaps present a new paradigm for mid-IR materials, but advances in charge transport and collection are needed for practical use in electronic applications. By replacing the organic ligands in films of HgTe CQDs with As 2 S 3 , a problem of oxidation in air is avoided and charge carrier mobilities are improved 100 fold compared to the standard organic ligand exchange. The composite inorganic HgTe/As 2 S 3 material allows for ambipolar field effect transistors with on-off ratios up to 10 7 , and photodetectors with high sensitivity, reaching 3x10 10 Jones at 230 K with a 3.5 micron cutoff wavelength.

International audience; Thermal deflection spectroscopy allows to measure very small absorption and uncovers absorption tails extending well below the bulk bandgap energy for CdSe quantum dots films after ligand exchange by sulfide. In this monodispersed system, the redshift, the broadening, and the absorption tails cannot be solely attributed to electronic coupling between the dots. Instead, mixing of hole states from the quantum dot and surface is proposed to dominate the changes of the interband spectra at the absorption edge.

International audience; The use of colloidal material offers an interesting alternative to top down approaches for the realization of low cost infrared detectors. We demonstrate photoconduction in thin films of a colloidal material in the mid-infrared (up to 7 μm), using HgTe colloidal quantum dots. Thin films of the colloidal quantum dots have a large absorption coefficient (>104 cm−1), and the photoconductive response is dramatically improved by encapsulating the nanoparticle into an inorganic matrix of As2S3. Such devices show fast response and large detectivity (>1010 jones) at temperatures above 200 K.

HgTe colloidal quantum dots are prepared via a simple two-step injection method. Absorption and photodetection with sharp edges, as well as narrow photoluminescence, are tunable across the near and mid-IR between 1.3 and 5 μm.

International audience; We report on HgTe colloidal-based quantum-dot mid-infrared (IR) photode-tectors. We demonstrate tuning the cutoff wavelength of this detector from the near IR up to 7 lm. Responsivity values of films of HgTe nanoparticles a few hundred nanometers thick are in the 100 mA W À1 range even at room temperature. The detectivity of this film is limited by large 1/f noise. Time responses as short as 200 ns are achieved.

Researchers show that thin films containing HgTe quantum dots with diameters of around 10 nm exhibit a photoresponse in the mid-infrared that extends to wavelengths as long as 5 µm. Such films could become the basis of a new form of low-cost mid-infrared photodetector.

The temperature and electrical field dependent conductivity of n-type CdSe nanocrystal thin films is investigated. In the low electrical field regime, the conductivity follows G ~ exp(-(T*/T)^0.5) in the temperature range 10K, Comment: Submitted to Physical Review Letters on Dec. 22, 2003