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A comprehensive quantitative root cause study of defect evolution leading to memory window closure from a charge balance and charge trapping perspective throughout all phases of a Si channel Hf0.5Zr0.5O2 (HZO) ferroelectric field-effect-transistor (FEFET) is reported. Starting with the first write pulse, an excessive SiO2 interlayer field is revealed that triggers the creation of defect levels Dit in excess of 1015 cm−2 eV−1 at the HZO–SiO2 interface screening ferroelectric (FE) polarization while enabling FE switching. Under subsequent early bipolar fatigue cycling (up to 104 cycles), defect creation commences at the SiO2–Si interface due to the high injected hole fluence (0.39 C/m2) during each stress pulse causing negative bias instability (NBI), which shifts the threshold voltage of the erase state VT,ERS by −0.3 V with accrual of permanently captured charge Nit of up to +5 × 10−3 C/m2 (3 × 1012 cm−2). Subsequently, Nit NBI generation at the SiO2–Si interface accelerates reaching levels of +7 × 10−2 C/m2, locking both FEFET program and erase drain current vs gate–source-voltage (ID–VGS) characteristics in the FEFET on-state inducing memory window closure at 105 cycles while FE switching (switched polarization Psw = 0.34 C/m2) remains essentially intact. These findings guide the down-selection toward suitable semiconductor/FE systems for charge balanced, reliable, and high endurance FEFETs. [ABSTRACT FROM AUTHOR]

In this article, a 0.7 nm thick monolayer MoS2 nanosheet gate-all-around field effect transistors (NS-GAAFETs) with conformal high- κ metal gate deposition are demonstrated. The device with 40 nm channel length exhibits a high on-state current density of ~410 μ A μ m−1 with a large on/off ratio of 6 × 108 at drain voltage = 1 V. The extracted contact resistance is 0.48 ± 0.1 kΩ μ m in monolayer MoS2 NS-GAAFETs, thereby showing the channel-dominated performance with the channel length scaling from 80 to 40 nm. The successful demonstration of device performance in this work verifies the integration potential of transition metal dichalcogenides for future logic transistor applications. [ABSTRACT FROM AUTHOR]

Carbon nanotube (CNT) field effect transistors (CNFETs) show promise for the next generation VLSI systems due to their excellent scalability, energy efficiency, and speed. However, high leakage current is a drawback of large diameter CNTs (diameter (DCNT) ≥ 1.4 nm) due to the small electronic band gap (EG) ≤ 0.6 eV and effective mass. This work investigates the on‐current and off‐current tradeoff for two populations of semiconducting‐enriched CNT with DCNT ≈ 1.0 nm displaying a simultaneous 50x improvement in minimun current (IMIN) with 2.5x degradation in contact resistance compared to DCNT ≈ 1.4 nm using a Pd side‐bonded contact. A method to enhance the performance of low‐leakage CNFETs is demonstrated using sub‐monolayer self‐aligned contact doping with 0.8 nm of MoOX, which delivers a 57% reduction in contact resistance to DCNT ≈ 1.0 nm. Robustness is verified after annealing at 200 °C for 30 min and monitoring stability across 6 months post‐fabrication with no change in electrical behaviors. [ABSTRACT FROM AUTHOR]

In this paper, we discuss our experiences with an after-school program in which we engaged middle-school students with low socioeconomic status from an urban community in mathematical problem solving. We document that these students participated in many aspects of problem solving, including the posing of problems, constructing justifications, developing and implementing problem-solving heuristics and strategies, and understanding and evaluating the solutions of others. We then delineate what aspects of our environment encouraged the students to take part in these activities, particularly emphasising the proactive role of the teacher, the tasks the students completed, and the social norms of our after-school sessions. Finally, we discuss the relationship between our study and the literature on equity research in mathematics education. (Contains 1 table and 4 footnotes.)

Semiconducting single‐walled carbon nanotube (CNT) is a promising candidate as a channel material for advanced logic transistors, attributed to the ultra‐thin 1‐nm cylindrical geometry, high mobility, and high carrier injection velocity. However, the presence of undesired CNT bundles in the CNT arrays for wafer‐scale device fabrication, even when utilizing the state‐of‐the‐art dimension‐limited self‐alignment (DLSA) method, poses challenges. These CNT bundles degrade the transistor gate's efficiency in controlling the flow of charge carriers in the CNT channel, leading to pronounced device‐to‐device variability. Here, a novel method is introduced to alleviate bundling in CNT arrays assembled via DLSA, by involving small molecule additive to screen the attractive van der Waals force between neighboring CNTs during the DLSA process, resulting in over 50% reduction in CNT bundling. Furthermore, a pioneering methodology for quantifying CNT bundles is presented and employed experimentally to assess bundles in dense CNT arrays assembled by DLSA using transmission electron microscopy. Both experimental data and molecular dynamics simulation reveal that CNT bundling originates from van der Waals attraction between CNTs, and the disturbed liquid‐liquid interface by accumulating excess polar molecules. These findings illuminate new pathways for realizing dense, bundle‐free CNT arrays. [ABSTRACT FROM AUTHOR]

In this work, we develop an ultrathin epitaxial h-AlN as an interfacial layer (IL) between HfO2 and monolayer WS2 channel by atomic layer deposition (ALD). The growth of ultrathin dielectrics using ALD has been challenging due to the dangling-bond-free surface of 2D materials. By utilizing sub-1 nm h-AlN as an IL and depositing HfO2 high-k dielectric, we were able to form a uniform and atomically flat gate dielectric without voids. The resulting structure exhibits an equivalent oxide thickness as low as 1 nm and ultra-low leakage currents of ∼10−6 A/cm2. The fabricated top-gate WS2 transistors demonstrate on-off ratios of around 106 and subthreshold swing as low as 93 mV/dec. Furthermore, we have verified the feasibility of using h-AlN IL for a gate-all-around structure. Our work presents a CMOS-compatible low-temperature ALD process for integrating gate dielectrics, offering excellent thickness scalability and uniform coverage around monolayer WS2 nanosheets. The combination of high-quality two-dimensional dielectrics and semiconductors will contribute to the development of future high-performance and low-power electronic devices. [ABSTRACT FROM AUTHOR]

Anisotropic growth of two-dimensional (2D) tungsten disulfide (WS2) crystals occurs during atomic layer deposition (ALD) from WS2 seeds at predetermined locations on large area dielectric substrates. The number of ALD reaction cycles determines the lateral dimensions of the WS2 crystals. This 2D synthesis approach is compatible with temperature sensitive structures due to the low deposition temperature and can be extended to other 2D materials and heterostructures thereof. The crystallinity of the seed and the selectivity of ALD precursors toward seeds and underlying starting surface affect the structural quality of the 2D crystals. [ABSTRACT FROM AUTHOR]

This paper reports a teaching experiment in which two students engaged in tasks that challenged them to describe a final state for a variety of infinite iterative processes. The results from the study indicate that the students used multiple reasoning strategies for addressing these tasks. Refinements in the students' reasoning occurred as students constructed relationships between the problems they were solving and problems they had solved previously, applying some of the reasoning strategies that they used for one problem to make sense of or solve another problem. We discuss how these findings relate to the existing body of research on infinite iterative processes.

Nine prospective secondary mathematics teachers were interviewed about their teaching internship experience. The results of these interviews revealed that 7 of the 9 participants professed to value reform-oriented teaching and conceptual understanding in mathematics, yet all were paired with cooperating teachers who seemed to value traditional instruction and procedural understanding in mathematics. We explored the reasons that some of these student interns had positive experiences with their cooperating teachers and university supervisors while others had negative experiences. We found that the participants valued (a) critical feedback that was constructive and contained concrete recommendations for improvement, (b) freedom to use their own teaching methods, and (c) a friendly and supportive relationship with their mentors. The differing teaching philosophies of student teachers and their cooperating teachers contributed to negative experiences only when student teachers were not allowed freedom in their teaching methods.

Introducere. Febra butonoasă (FB) este o boală infecţioasă emergentă în România, evoluând în sudul ţării, după cum reiese din rata incidenţei înregistrată în ultimii ani, conform studiilor noastre anterioare de epi- demiologie descriptivă. Ne-am propus să evaluăm prevalenţa anticorpilor specifici IgG Rickettsia conorii într-un eşantion de populaţie generală din aria afectată. Metode. S-a efectuat un studiu de seroprevalenţă prin metoda ELISA pe 301 probe de ser colectate din aria de sud a României; aria cea mai afectată de FB. Unul din criteriile de selecţie a fost absenţa semnelor şi simptomelor caracteristice bolii în perioada de evoluţie sezonieră a FB. Analiza statistică. Datele au fost prelucrate statistic cu softul SPSS V.19 (indicatori tendinta centrala, dispersie, frecventa si teste de comparare). Rezultate. Rezultatele serologice au arătat o rata de pozitivitate generală de 25.2% cu cea mai mare rată de pozitivitate la grupul de populaţie de peste 60 de ani 34,21% din totalul probelor de ser (63,6% pentru judeţul Tulcea şi 55.56% pentru Bucureşti). Concluzii. Confirmând ipoteza că FB îmbracă un caracter endemic în sudul României, bazată pe studiile noastre anterioare, studiul de faţă a adus argumente în sprijinul necesităţii de a introduce un program naţional de supraveghere în scopul cunoaşterii reale a incidenţei, managementului şi controlului FB în ţara noastră. După cunoştintele noastre, acesta este primul studiu de seroprevalenţă a anticorpilor specifici IgG Rickettsia conorii în România.

In the context of neuromorphic computation, spintronic memristors are investigated for their use as synaptic weights. In this paper, we propose and experimentally demonstrate a resistive synaptic device based on ten magnetic tunnel junctions (MTJs) connected in a serial configuration. Our device exhibits multiple resistance levels that support its use as a synaptic element. It allows for two operating knobs: external magnetic field and voltage pulses (Spin-Transfer Torque). Moreover, it can be operated in different ways. When varying continuously the amplitude of the voltage pulse and/or the magnetic field, eleven resistance states can be reached. In contrast, if the initial state of the chain is reset between every step, a very large number of levels are reached. Ideally, a total of 2 N resistance levels could be accessible. This coincides well with the desired analog-like behavior in ideal memristors. Since this device consists of a scalable number of N MTJs, and MTJ technology is continuously optimized and improved, the proposed memristor shows promise as a scalable synapse solution for neuromorphic hardware implementations. [ABSTRACT FROM AUTHOR]

Carbon nanotube field effect transistors (CNFETs) have potential applications in future logic technology as they display good electrostatic control and excellent transport properties. However, contact resistance and leakage currents could limit scaling of CNFETs. Non-equilibrium Green’s function (NEGF) simulation investigates that coupling between contact metal and CNT impacts both contact resistance and leakage current. The physical mechanisms underlying the effects are analyzed. A model with calibrated metal coupling strength from experimental data projects ION-IOFF design space to understand the trade-off between shrinking contact and extension lengths. For CNT with diameter of 1 nm, both contact and extension lengths greater than 8 nm are a good compromise between ION and IOFF for digital logic in advanced technology nodes. [ABSTRACT FROM AUTHOR]

The continuous variability of SARS-CoV-2 and the rapid waning of specific antibodies threatens the efficacy of COVID-19 vaccines. We aimed to evaluate antibody kinetics one year after SARS-CoV-2 vaccination with an mRNA vaccine in healthcare workers (HCW), with or without a booster. A marked decline in anti-Spike(S)/Receptor Binding Domain (RBD) antibody levels was registered during the first eight months post-vaccination, followed by a transitory increase after the booster. At three months post-booster an increased antibody level was maintained only in HCW vaccinated after a prior infection, who also developed a higher and long-lasting level of anti-S IgA antibodies. Still, IgG anti-nucleocapsid (NCP) fades five months post-SARS-CoV-2 infection. Despite the decline in antibodies one-year post-vaccination, 68.2% of HCW preserved the neutralization capacity against the ancestral variant, with a decrease of only 17.08% in the neutralizing capacity against the Omicron variant. Nevertheless, breakthrough infections were present in 6.65% of all participants, without any correlation with the previous level of anti-S/RBD IgG. Protection against the ancestral and Omicron variants is maintained at least three months after a booster in HCW, possibly reflecting a continuous antigenic stimulation in the professional setting. [ABSTRACT FROM AUTHOR]

In this work, we report on the sensitivity of photo-electrical detection of magnetic resonances (PDMR) for magnetometry measurement using low density nitrogen vacancy (NV) ensembles in CVD-grown diamond. We demonstrate that the selection of the laser excitation wavelength is of importance for achieving optimal magnetic field sensitivity. The PDMR sensitivity obtained using a yellow-green (561 nm) laser surpasses the performances of a green laser (532 nm), by suppressing the photoionization of defects other than NV centers (such as P1 centers). It consequently allows to carry out the PDMR measurements at lower laser powers with increased magnetic resonance contrast. Noticeably for both the green and the yellow-green illuminations, PDMR leads to an improved sensitivity to magnetic fields in the selected conditions compared to optically detected magnetic resonance. [ABSTRACT FROM AUTHOR]

The functionality of a cross-shaped Spin Torque Majority Gate (STMG) is primarily limited by the pinning of a domain wall (DW) at the center of the device. Here, an analytical model is built to calculate the conditions for such a pinning and to deduce the operating range. The assumptions of the model and the conclusions are validated by micromagnetic simulations. The total magnetic energy of the DW state is derived. By minimizing this energy with respect to two degrees of freedom, the DW stability condition is obtained. We find that the lateral length of the STMG is the critical dimension: it must be smaller than about five times the DW width. This result is confirmed by micromagnetic simulations with a high accuracy. In process, we solved a more fundamental problem: the macrospin limit of a finite ferromagnet containing one pinning site. We found the correction of the usual DW width expression due to finite length of wires. [ABSTRACT FROM AUTHOR]

Perpendicular Magnetic Anisotropy (PMA) is a key requirement for state of the art Magnetic Random Access Memories (MRAM). Currently, PMA has been widely reported in standard Magnetic Tunnel Junction material stacks using MgO as a dielectric. In this contribution, we present the first report of PMA at the interface with a high-j dielectric grown by Atomic Layer Deposition, HfO2. The PMA appears after annealing a HfO2\Co\Pt\Ru stack in N2 with the Keff of 0.25 mJ/m² as determined by Vibrating Sample Magnetometry. X-Ray Diffraction and Transmission Electron Microscopy show that the appearance of PMA coincides with interdiffusion and the epitaxial ordering of the Co\Pt bilayer. High-κ dielectrics are especially interesting for Voltage Control of Magnetic Anisotropy applications and are of potential interest for low-power MRAM and spintronics technologies. [ABSTRACT FROM AUTHOR]

Charge trapping is arguably the most important detrimental mechanism distorting the ideal characteristics of MOS transistors, and nonradiative multiphonon (NMP) models have been demonstrated to provide a very accurate description. For the calculation of the NMP rates at room temperature or above, simple semiclassical approximations have been successfully used to describe this intricate mechanism. However, for the computation of charge transition rates at cryogenic temperatures, it is necessary to use the full quantum mechanical description based on Fermi’s golden rule. Since this is computationally expensive and often not feasible, we discuss an efficient method based on the Wentzel–Kramers–Brillouin (WKB) approximation in combination with the saddle point method and benchmark this approximation against the full model. We show that the approximation delivers excellent results and can, hence, be used to model charge trapping behavior at cryogenic temperatures. [ABSTRACT FROM AUTHOR]

We present time-zero characterization and an investigation on bias temperature instability (BTI) degradation between 4 and 300 K on large area high- ${k}$ CMOS devices. Our measurements show that negative BTI (NBTI) on pMOSFETs freezes out when approaching cryogenic temperatures, whereas there is still significant positive BTI (PBTI) degradation in nMOSFETs even at 4 K. To explain this behavior, we use an efficient implementation of the quantum mechanical nonradiative multiphonon charge trapping model presented in Part I and extract two separate trap bands in the SiO2 and HfO2 layer. We show that NBTI is dominated by defects in the SiO2 layer, whereas PBTI arises mainly from defects in the HfO2 layer, which are weakly recoverable and do not freeze out at low temperatures due to dominant nuclear tunneling at the defect site. [ABSTRACT FROM AUTHOR]

Background and Aim: Treatment with sorafenib causes diverse side effects, which limits adherence. This work assesses whether Home Care, a psychosocial nursing intervention, prolongs the duration of treatment in patients with advanced hepatocellular carcinoma (HCC) and if it influences health‐related quality of life (HRQL). Methods and Results: This is a cohort study using data from patients receiving sorafenib in the prospective Bern HCC Cohort at the University Hospital. Duration of treatment, overall survival, and HRQL using the Functional Assessment of Cancer Therapy‐Hepatobiliary questionnaire were compared in the two groups. A total of 173 patients were eligible for the analysis. Among them, 141 were in the Home Care program, and 32 were not. Patients with Home Care had a significantly longer duration of treatment (265 days vs 152 days, P = 0.003) and a better functional well‐being (17.7 vs 12.5, P = 0.015). Conclusion: Psychosocial interventions such as Home Care are a valid method in improving adherence to sorafenib and can therefore be recommended. [ABSTRACT FROM AUTHOR]

We present the development of Nb/Al–AlOx/Nb trilayer stacks and the implementation of a full 300 mm process flow for the fabrication of trilayer-based superconducting qubits. Room temperature electrical characterization of tens of thousands of Josephson junctions showed good agreement between blanket resistance-area (RA) product and RA product of processed wafers. Cross-bridge Kelvin resistor structures with dimensions ranging from 200 nm to 1.2 μm were tested and exhibited excellent yield and exceptionally low resistance variability down to <1%. This result is expected to translate to reduced qubit device variability and improved predictability of qubit transition frequencies at cryogenic temperatures. [ABSTRACT FROM AUTHOR]

Spin wave modes in magnetic waveguides with the width down to 320 nm have been studied by electrical propagating spin-wave spectroscopy and micromagnetic simulations for both longitudinal and transverse magnetic bias fields. For longitudinal bias fields, a 1.3 GHz wide spin-wave band was observed in agreement with analytical dispersion relations for uniform magnetization. However, the transverse bias field led to several distinct bands, corresponding to different quantized width modes, with both negative and positive slopes. Micromagnetic simulations showed that, in this geometry, the magnetization was nonuniform and tilted due to the strong shape anisotropy of the waveguides. Simulations of the quantized spin-wave modes in such nonuniformly magnetized waveguides resulted in spin wave dispersion relations in good agreement with the experiments. [ABSTRACT FROM AUTHOR]

Spin logic devices based on domain wall (DW) motion offer flexible architectures to store and carry logic information in a circuit. In this device concept, information is encoded in the magnetic state of a magnetic track shared by multiple magnetic tunnel junctions (MTJs) and is processed by DW motion. Here, we demonstrate that all-electrical control of such nanoscale DW-based logic devices can be realized using a novel MTJ stack. In addition to field-driven motion, which is isotropic, we show the directional motion of DWs driven by current, a key requirement for logic operation. Full electrical control of an AND logic gate using DW motion is demonstrated. Our devices are fabricated in imec’s 300-mm CMOS fab on full wafers, which clears the path for large-scale integration. This proof of concept, thus, offers potential solutions for high-performance and low-power DW-based devices for logic and neuromorphic applications. [ABSTRACT FROM AUTHOR]

2D materials offer a pathway for further scaling of CMOS technology. However, for this to become a reality, both n-MOS and p-MOS should be realized, ideally with the same (standard) material. In the specific case of MoS2 field effect transistors (FETs), ambipolar transport is seldom reported, primarily due to the phenomenon of Fermi level pinning (FLP). In this study we identify the possible sources of FLP in MoS2 FETs and resolve them individually. A novel contact transfer technique is used to transfer contacts on top of MoS2 flake devices that results in a significant increase in the hole branch of the transfer characteristics as compared to conventionally fabricated contacts. We hypothesize that the pinning not only comes from the contact-MoS2 interface, but also from the MoS2-substrate interface. We confirm this by shifting to an hBN substrate which leads to a 10 fold increase in the hole current compared to the SiO2 substrate. Furthermore, we analyse MoS2 FETs of different channel thickness on three different substrates, SiO2, hBN and Al2O3, by correlating the p-branch ION/IOFF to the position of oxide defect band in these substrates. FLP from the oxide is reduced in the case of Al2O3 which enables us to observe ambipolar transport in a bilayer MoS2 FET. These results highlight that MoS2 is indeed an ambipolar material, and the absence of ambipolar transport in MoS2 FETs is strongly correlated to its dielectric environment and processing conditions. [ABSTRACT FROM AUTHOR]