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9. A Halide‐Based Perovskite CsGeX3 (X = Cl, Br, and I) for Optoelectronic and Piezoelectric Applications.

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19. Strain induced modification of CdO monolayer electronic properties.

20. A new d 2 /d o type tetragonal thermoelectric material hfsisb, a half–heusler compound: A fp–lapw method

21. A new d2 /do type tetragonal thermoelectric material hfsisb, a half–heusler compound: A fp–lapw method

22. Study of Half-metallic Properties of Co2YGe (Y = Sc, Ti, V, Cr, Mn, Fe): A Density Functional Theory.

23. The electronic and thermoelectric properties of a d(2)/d(0) type tetragonal half-Heusler compound, HfSiSb: A FP-LAPW method

24. Theoretical Study of ZnS Monolayer Adsorption Behavior for CO and HF Gas Molecules.

25. Pressure-Induced Enhanced Optical Absorption in Sulvanite Compound Cu 3 TaX 4 (X = S, Se, and Te): An ab Initio Study.

26. Enhanced H 2 Storage Capacity of Bilayer Hexagonal Boron Nitride (h-BN) Incorporating van der Waals Interaction under an Applied External Electric Field.

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