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The capacity of noisy quantum channels characterizes the highest rate at which information can be reliably transmitted and it is therefore of practical as well as fundamental importance. Capacities of classical channels are computed using alternating optimization schemes, called Blahut-Arimoto algorithms. In this work, we generalize classical Blahut-Arimoto algorithms to the quantum setting. In particular, we give efficient iterative schemes to compute the capacity of channels with classical input and quantum output, the quantum capacity of less noisy channels, the thermodynamic capacity of quantum channels, as well as the entanglement-assisted capacity of quantum channels. We give rigorous a priori and a posteriori bounds on the estimation error by employing quantum entropy inequalities and demonstrate fast convergence of our algorithms in numerical experiments. [ABSTRACT FROM AUTHOR]

We theoretically investigate the transport and magnetotransport properties of three-dimensional Weyl semimetals. Using the random phase approximation-Boltzmann transport scattering theory for electrons scattering off randomly distributed charged impurities, together with an effective medium theory to average over the resulting spatially inhomogeneous carrier density, we smoothly connect our results for the minimum conductivity near the Weyl point with known results for the conductivity at high carrier density. In the presence of a nonquantizing magnetic field, we predict that for both high and low carrier densities, Weyl semimetals show a transition from quadratic magnetoresistance (MR) at low magnetic fields to linear MR at high magnetic fields, and that the magnitude of the MR ≳ 10 for realistic parameters. Our results are in quantitative agreement with recent unexpected experimental observations on the mixed-chalcogenide compound TIBiSSe. [ABSTRACT FROM AUTHOR]

A linear unsaturating magnetoresistance at high perpendicular magnetic fields, together with a quadratic positive magnetoresistance at low fields, has been seen in many different experimental materials, ranging from silver chalcogenides and thin films of InSb to topological materials like graphene and Dirac semimetals. In the literature, two very different theoretical approaches have been used to explain this classical magnetoresistance as a consequence of sample disorder. The phenomenological random resistor network model constructs a grid of four terminal resistors, each with a varying random resistance. The effective medium theory model imagines a smoothly varying disorder potential that causes a continuous variation of the local conductivity. Here, we demonstrate numerically that both models belong to the same universality class and that a restricted class of the random resistor network is actually equivalent to the effective medium theory. Both models are also in good agreement with experiments on a diverse range of materials. Moreover, we show that in both cases, a single parameter, i.e., the ratio of the fluctuations in the carrier density to the average carrier density, completely determines the magnetoresistance profile. [ABSTRACT FROM AUTHOR]

We predict and demonstrate that a disorder-induced carrier density inhomogeneity causes magnetoresistance (MR) in a two-dimensional electron system. Our experiments on graphene show a quadratic MR persisting far from the charge neutrality point. Effective medium calculations show that for charged impurity disorder, the low-field MR is a universal function of the ratio of carrier density to fluctuations in carrier density, a power law when this ratio is large, in excellent agreement with experiment. The MR is generic and should occur in other materials with large carrier density inhomogeneity. [ABSTRACT FROM AUTHOR]