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Approximate computing (AC) is an emerging technique in arithmetic circuits. In this letter, a new AC-based full adder (FA) circuit is presented with 12 transistors, 150mm]Please confirm or add details for any funding or financial support for the research of this article. -160mm]If you haven’t done so already, please make sure you have submitted a video graphical abstract (GA) for your paper, along with a caption and overlay image. The GA will be displayed on your articles abstract page on IEEE Xplore. Note that captions cannot exceed 1800 characters (including spaces). Overlay images are usually a screenshot of your video that best represents the video. This is for readers who may not have access to video-viewing software. 0.239 $\mu \text{m}^{2}$ of area, and two errors in the outputs. In the proposed FA, the gate diffusion input (GDI) and dynamic-threshold (DT) techniques are applied using the carbon nanotube field-effect transistor (CNTFET) technology. Accuracy metrics, such as normalized mean error distance (NMED) and mean relative error distance (MRED) along with circuitry parameters of power-delay-product (PDP), energy-delay-product (EDP), and power-delay-area-product (PDAP), confirm the efficiency of the proposed FA for complex structures. The proposed FA is embedded in a ripple carry adder (RCA) by various numbers of approximate bits (NABs), and then the accuracy and circuitry parameters are extracted. Compared to the state-of-the-art designs, the high-efficient behavior of the proposed FA is proved when it is used in image processing applications. [ABSTRACT FROM AUTHOR]

A new low‐power and high‐speed multiplier is presented based on the voltage over scaling (VOS) technique and new 5:3 and 7:3 counter cells. The VOS reduces power consumption in digital circuits, but different voltage levels of the VOS increase the delay in different stages of a multiplier. Hence, the proposed counters are implemented by the gate‐diffusion input technique to solve the speed limitation of the VOS‐based circuits. The proposed GDI‐based 5:3 and 7:3 counters save power and reduce the area by 2x and 2.5x, respectively. To prevent the threshold voltage (Vth) drop in the suggested GDI‐based circuits, carbon nanotube field‐effect transistor (CNTFET) technology is used. In the counters, the chirality vector and tubes of the CNTFETs are properly adjusted to attain full‐swing outputs with high driving capability. Also, their validation against heat distribution under different time intervals, as a major issue in the CNTFET technology is investigated, and their very low sensitivity is confirmed. The low complexity, high stability and efficient performance of the presented counter cells introduce the proposed VOS‐CNTFET‐GDI‐based multiplier as an alternative to the previous designs. [ABSTRACT FROM AUTHOR]

A new 1‐bit full adder (FA) cell illustrating low‐power, high‐speed, and a small area is presented by a combination of transmission gate (TG), pass transistor logic (PTL), and float techniques. Using the proposed cell, a 4:2 compressor is implemented and its performance is investigated under diverse circumstances of voltage, temperature, and driving. The process and corners are evaluated through the process‐voltage‐temperature (PVT) variations and the Monte Carlo method (MCM), respectively. The accuracy and reliability of the proposed 4:2 compressor are confirmed carefully. Utilising the proposed FA and the compressor, an efficient 8‐bit subtractor is implemented for bioimage processing, in particular for difference detection of images. A new mechanism is presented to improve the detection performance of digital signal processors (DSPs) by the addition and subtraction of two images for their difference. The quality of the resulted image confirms the efficiency of the proposed circuits and the method. The high performance of the circuits makes them a promising candidate for the next generation of integrated circuits (ICs) applicable to medical image processing. [ABSTRACT FROM AUTHOR]

Summary: The performance of the programmable integrated circuits (ICs) like digital signal processors (DSPs), central processing units (CPUs), and microcontrollers is highly dependent on the magnitude comparators. This article presents a new reliable and efficient 1‐bit comparator based on carbon nanotube field‐effect transistors (CNTFETs) technology. The gate diffusion input (GDI) technique is used to reduce the number of transistors. Also, single swing restoration (SR) transistors and transmission gate (TG) techniques are combined to attain full‐swing outputs with high driving capability. The low internal capacitances and the fewer number of internal nodes of the proposed comparator make it low‐power both in single‐bit and multibit (2‐bit, 4‐bit, 8‐bit, and 16‐bit) implementations. Variations analyses of the circuit and technology parameters are performed that show the cell efficiency. From the layout results, the 1‐bit and 16‐bit comparators occupy 0.1944 μm2 and 37.485 μm2 as the total die area, respectively. The proposed circuit is implemented in image processing in which the best performance compared with state‐of‐the‐art designs regarding hardware complexity, circuitry performance, and image quality assessments are confirmed, by at least 50% improvements of different critical parameters. The resulted figure of merits nominates the cell for future ICs. [ABSTRACT FROM AUTHOR]

In this letter, a low-power 1-bit full-adder (FA) cell is proposed based on the transmission gate (TG) to attain a special module for generating full-swing Carry output. The cell benefits from the high driving capability for both Sum and Carry outputs when embedding in multistage structures like ripple-carry adders (RCAs), compressors, and multipliers. The proposed TG-based FA has a total die area of 60.02 $\mu \text{m}^{2}$ , while the average power, delay, and power-delay-product (PDP) are 10.829 $\mu \text{W}$ , 3.1954 ns, and 34.603 fJ, respectively. The results introduce the FA cell as an efficient gate for integrated circuits (ICs). [ABSTRACT FROM AUTHOR]

Here, a new 4:2 approximate compressor is presented by the gate diffusion input (GDI) technique. Although GDI cells suffer from threshold voltage drop, the dynamic threshold approach and carbon nanotube field‐effect transistors are merged to overcome the mentioned problem. The proposed cell has full‐swing outputs, while its error and power delay product are at low rates. Therefore, low voltage multipliers that are used in image processing can benefit from the proposed compressor. [ABSTRACT FROM AUTHOR]