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We have fabricated two types of InGaN superluminescent diodes applying two different concepts of cavity suppression: a tilted waveguide geometry and passive absorber solution. Both types of devices showed superluminescence behavior, but both eventually lased under the application of high enough current. The lasing threshold turned out to be higher for tilted waveguide devices. By using long (2 mm) waveguides, we managed to demonstrate the power in superluminescent mode exceeding 100 mW in blue/violet part of the spectrum. [ABSTRACT FROM AUTHOR]

We demonstrate graded-index-separate-confinement-heterostructure InGaN laser diodes (GRINSCH) grown by metal organic vapor phase epitaxy. In this type of structure, the optical mode is confined close to the active region by cladding layers with linearly changing Al content. The virtue of this structure lies in simultaneous improvement of injection efficiency through the funneling effect and mode confinement. After a careful modeling we demonstrate that GRINSCH InGaN laser indeed possess very encouraging properties. Low threshold current density of around 3.5 kA/cm2 accompanied by high differential gain (dG/dJ = 14.93 cm kA-1) make these devices an interesting alternative for the classical step-index structure. [ABSTRACT FROM AUTHOR]

InGaN laser diodes were fabricated with a tapered resonator in order to combine high quality of the lasing mode, characteristic for narrow stripe lasers, with high optical power, expected from wide area devices and to reduce current density responsible for device degradation. A number of devices were tested with taper angles between 2° and 5° and various taper lengths. It is demonstrated that, with the proper choice of device geometry, it is possible to obtain an almost singlemode operation characterised by an M2 parameter as low as 2.1 at optical power of 200 mW. [ABSTRACT FROM AUTHOR]

We demonstrate InGaN laser diodes with substantially reduced thickness of their bottom AlGaN cladding grown on plasmonic GaN substrate. The electron concentration in plasmonic substrate grown by ammonothermal method was of the order of 1020 cm-3, which corresponds to the refractive index reduction by 0.7% when comparing to undoped GaN. We were able to reduce the thickness of AlGaN bottom claddings from the initial 800 nm down to 400 nm without any worsening of laser threshold current or near-field patterns. The results are in agreement with the optical modeling of the InGaN laser diode structure fabricated on plasmonic GaN substrate. [ABSTRACT FROM AUTHOR]

We studied degradation mechanisms of ultraviolet InGaN laser diodes emitting in the UVA range. Short wavelength nitride devices are subjected to much faster degradation, under the same packaging and testing conditions, than their longer wavelength counterparts. Transmission electron microscopy analysis of the degraded laser diodes showed pronounced damage to facets in the area of the active layer (waveguide, quantum wells, and electron blocking layer). Energy-dispersive X-ray spectroscopy showed that the active layers were heavily oxidized, forming a compound close in composition to Ga 2 O 3 with proportional addition of Al in the respective area. The oxidation depth was roughly proportional to the intensity of the optical field. We propose UV-light-induced water splitting on a semiconductor surface as a mechanism of the oxidation and degradation of these devices.

We report a thorough study of InGaN quantum wells spatially modified by varying the local misorientation of the GaN substrate prior to the epitaxial growth of the structure. More than 25 nm shift of emission wavelength was obtained, which is attributed to indium content changes in the quantum wells. Such an active region is promising for broadening of the emission spectrum of (In,Al,Ga)N superluminescent diodes. We observed that the light intensity changes with misorientation, being stable around 0.5° to 2° and decreasing above 2°. This relation can be used as a base for future device designing.

We demonstrate a stack of two III-nitride laser diodes (LDs) interconnected by a tunnel junction grown by plasma-assisted molecular beam epitaxy. Hydrogen-free growth is used to obtain as-grown p-type conductivity essential for buried tunnel junctions (TJ). We show the impact of the design of tunnel junction. In particular, we show that, apart from the beneficial piezoelectric polarization inside the TJ, heavy doping reduces the differential resistivity even further. The device starts to lase at a wavelength of 459 nm with a slope efficiency (SE) of 0.7 W/A followed by lasing at 456 nm from the second active region doubling the total SE to 1.4 W/A. This demonstration opens new possibilities for the fabrication of stacks of ultraviolet and visible high power pulsed III-nitride LD.

In this paper we demonstrate 450 nm (Al,In)GaN graded index separate confinement heterostructure travelling wave optical amplifier with a double 'j-shape' waveguide. The length of the amplifier is 2.5 mm and the width of the ridge is 2.5 µm. The active region consists of three 3.5 nm thick quantum wells. The measured optical gain under CW operation in room temperature exceeded 29 dB for low power input signals. The saturation output power was 21 dBm for 400 mA driving current. The demonstrated amplifier, provides a good solution for the blue light, all nitrides, and master oscillator power amplifier systems.

We demonstrate InGaN/GaN superluminescent diodes with broadened emission spectra fabricated on surface-shaped bulk GaN (0001) substrates. The patterning changes the local vicinal angle linearly along the device waveguide, which results in an indium incorporation profile in InGaN quantum wells. The structure was investigated by microphotoluminescence mapping, showing a shift of central emission wavelength from 413 nm to 430 nm. Spectral full width at half maximum of processed superluminescent diodes is equal to 6.1 nm, while the reference chips show 3.4 nm. This approach may open the path for using nitride devices in applications requiring broad emission spectrum and high beam quality, such as optical coherence tomography.

The conformations of wild-type staphylococcal nuclease (SNase) in the ternary complexes with thymidine 3',5'-bisphosphate (pdTp), 2'-deoxyguanine 3',5'-bisphosphate (pdGp), and thymidine 3'-phosphate 5'-(p-nitrophenylphosphate) (NpdTp) with Ca2+ were examined by two-dimensional NMR NOESY and ROESY experiments. The results of these experiments indicate that the conformational features of the SNase are quite similar in the three ternary complexes. This suggests that the conformational features of SNase, in these ternary complexes, are not strongly dependent on whether the 5'-phosphate is a mono- or diester. This is in contrast to our prior studies on substitutions of active site charged amino acids which indicated that the conformational features of SNase in the ternary complex are quite sensitive to substitutions for active site charged amino acids (Hibler et al., 1987; Wilde et al., 1988; Pourmotabbed et al., 1990). The similarity of the SNase conformational features in the ternary complexes with pdTp and pdGp indicates that the features of the nucleotide bound at the active site are not strong determinants of the enzyme conformation in the ternary complexes. These conclusions are in general agreement with the results on pdApdT ternary complexes with SNase which suggested that it is the conformational features of the bound nucleic acid which determine the differences in catalysis observed for SNase with different substrates (Weber et al., 1991), more so than the conformational features of the enzyme.

The high-resolution X-ray structure of wild-type staphylococcal nuclease (E43 SNase) suggests that Glu 43 acts a general basic catalyst to assist the attack of water on a phosphodiester substrate [Loll, P., & Lattman, E. E. (1989) Proteins: Struct., Funct., Genet. 5, 183]. Glu 43 is located at the base of the solvent-exposed and conformationally mobile omega-loop in the active site of E43 SNase having the sequence Glu43-Thr44-Lys45-His46-Pro47-Lys48- Lys49-Gly50-Val51-Glu52, where the gamma-carboxylate of Glu 52 is hydrogen bonded to the amide hydrogen of Glu 43. With a metabolic selection for SNase activity produced in an Escherichia coli host, we detected an unexpected deletion of residues 44-49 of the omega-loop of E43 SNase in cassette mutagenesis experiments designed to randomize codons 44 and 45 in the omega-loop and increase the activity of the previously described E43D mutation (D43 SNase). A high-resolution X-ray structure of D43 SNase has revealed that the E43D substitution significantly changes the structure of the omega-loop, reduces the interaction of the essential Ca2+ ion with its active-site ligands, and diminishes the network of hydrogen-bonded water molecules in the active site [Loll, P., & Lattman, E. E. (1990) Biochemistry 29, 6866]. This deletion of six amino acids from the omega-loop generates a protein (E43 delta SNase) having a partially solvent-exposed, surface beta-turn with the sequence Glu43-Gly50-Val51-Glu52; the structure of this beta-turn is addressed in the following article [Baldisseri et al. (1991) Biochemistry (following paper in this issue)].(ABSTRACT TRUNCATED AT 250 WORDS)

The high-resolution X-ray crystal structure of staphylococcal nuclease (SNase) suggests that the guanidinium groups of Arg 35 and Arg 87 participate as electrophilic catalysts in the attack of water on the substrate phosphodiester. Both arginine residues have been replaced with "conservative" lysine residues so that both the importance of these residues in catalysis and the effect of changes in electrostatic interactions on active site conformation can be assessed. The catalytic efficiencies of R35K and R87K are decreased by factors of 10(4) and 10(5) relative to wild-type SNase, with R87K showing a very significant reduction in its affinity for both DNA substrate and the competitive inhibitor thymidine 3',5'-bisphosphate (pdTp). The thermal denaturation behavior of both mutant enzymes differs from that of wild type both in the absence and in the presence of the active site ligands Ca2+ and pdTp. Both the 1H NMR chemical shifts and interresidue nuclear Overhauser effects (NOEs) of residues previously assigned to be in the hydrophobic core of SNase are altered in R35K and R87K. These observations, similar to those recently reported by our laboratories for substitutions for Glu 43 [Hibler, D. W., Stolowich, N. J., Reynolds, M. A., Gerlt, J. A., Wilde, J. A., & Bolton, P. H. (1987) Biochemistry 26, 6278; Wilde, J. A., Bolton, P. H., Dell'Acqua, M., Hibler, D. W., Pourmotabbed, T., & Gerlt, J. A. (1988) Biochemistry 27, 4127], suggest that lysine substitutions are not conservative in SNase and disrupt the conformation of the active site.(ABSTRACT TRUNCATED AT 250 WORDS)