9 results on '"Stijn Poelman"'
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2. Hybrid modeling approach for mode-locked laser diodes with cavity dispersion and nonlinearity
- Author
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Stijn Cuyvers, Stijn Poelman, Kasper Van Gasse, and Bart Kuyken
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Medicine ,Science - Abstract
Abstract Semiconductor-based mode-locked lasers, integrated sources enabling the generation of coherent ultra-short optical pulses, are important for a wide range of applications, including datacom, optical ranging and spectroscopy. As their performance remains largely unpredictable due to the lack of commercial design tools and the poorly understood mode-locking dynamics, significant research has focused on their modeling. In recent years, traveling-wave models have been favored because they can efficiently incorporate the rich semiconductor physics of the laser. However, thus far such models struggle to include nonlinear and dispersive effects of an extended passive laser cavity, which can play an important role for the temporal and spectral pulse evolution and stability. To overcome these challenges, we developed a hybrid modeling strategy by unifying the traveling-wave modeling technique for the semiconductor laser sections with a split-step Fourier method for the extended passive laser cavity. This paper presents the hybrid modeling concept and exemplifies for the first time the significance of the third order nonlinearity and dispersion of the extended cavity for a 2.6 GHz III–V-on-Silicon mode-locked laser. This modeling approach allows to include a wide range of physical phenomena with low computational complexity, enabling the exploration of novel operating regimes such as chip-scale soliton mode-locking.
- Published
- 2021
- Full Text
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3. High-speed photodiodes on silicon nitride with a bandwidth beyond 100 GHz
- Author
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Dennis Maes, Luis Reis, Stijn Poelman, Ewoud Vissers, Vanessa Avramovic, Mohammed Zaknoune, Gunther Roelkens, Sam Lemey, Emilien Peytavit, Bart Kuyken, Department of Information Technology (INTEC), Universiteit Gent = Ghent University (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Plateforme de Caractérisation Multi-Physiques - IEMN (PCMP - IEMN), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Advanced NanOmeter DEvices - IEMN (ANODE - IEMN), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Photonics Research Group, Universiteit Gent = Ghent University (UGENT)-Universiteit Gent = Ghent University (UGENT), OSA, Renatech Network, PCMP CHOP, and CMNF
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[SPI]Engineering Sciences [physics] ,Technology and Engineering - Abstract
Session Photodetection (SM3K); International audience; Next-generation telecommunication systems will rely on photonic integrated circuits. However, Silicon Nitride (SiN) photonic platforms do not natively provide high-speed photodiodes. We integrated a waveguide-coupled UTC photodiode on a SiN platform using the scalable micro-transfer-printing technology. These diodes show a responsivity up to 0 . 45 A/W, a dark current below 10 nA and a 3 dB-bandwidth beyond 100 GHz, even at zero-bias. As such, high-performance photodetectors are available on silicon-nitride photonic platforms.
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- 2022
4. Hybrid integrated mode- locked laser using a GaAs-based 1064 nm gain chip and a SiN external cavity
- Author
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Ewoud Vissers, Stijn Poelman, Hans Wenzel, Heike Christopher, Kasper Van Gasse, Andrea Knigge, and Bart Kuyken
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Technology and Engineering ,LOCKING ,Atomic and Molecular Physics, and Optics - Abstract
External cavity mode-locked lasers could be used as comb sources for high volume application such as LIDAR and dual comb spectroscopy. Currently demonstrated chip scale integrated mode-locked lasers all operate in the C-band. In this paper, a hybrid-integrated external cavity mode-locked laser working at 1064 nm is demonstrated, a wavelength beneficial for optical coherence tomography or Raman spectroscopy applications. Additionally, optical injection locking is demonstrated, showing an improvement in the optical linewidth, and an increased stability of the comb spectrum. (c) 2022 Optica Publishing Group under the terms of the Optica Open Access Publishing Agreement
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- 2022
5. Heterogeneous integration of uni-travelling-carrier photodiodes using micro-transfer-printing on a silicon-nitride platform
- Author
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Sam Lemey, Camiel Op de Beeck, Dennis Maes, Muhammad Muneeb, Gunther Roelkens, Bart Kuyken, Emilien Peytavit, Maximilien Billet, Mohammed Zaknoune, Stijn Poelman, Department of Information Technology (INTEC), Universiteit Gent = Ghent University [Belgium] (UGENT), Institut d’Électronique, de Microélectronique et de Nanotechnologie - UMR 8520 (IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Photonique THz - IEMN (PHOTONIQUE THZ - IEMN), Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), Universiteit Gent = Ghent University (UGENT), Université catholique de Lille (UCL)-Université catholique de Lille (UCL), Université catholique de Lille (UCL)-Université catholique de Lille (UCL)-Centrale Lille-Université de Lille-Centre National de la Recherche Scientifique (CNRS)-Université Polytechnique Hauts-de-France (UPHF)-JUNIA (JUNIA), and Renatech Network
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Materials science ,Technology and Engineering ,business.industry ,Optical power ,7. Clean energy ,Waveguide (optics) ,Photodiode ,law.invention ,chemistry.chemical_compound ,Responsivity ,[SPI]Engineering Sciences [physics] ,Silicon nitride ,chemistry ,law ,Transfer printing ,Optoelectronics ,Quantum efficiency ,Photonics ,business ,ComputingMilieux_MISCELLANEOUS - Abstract
High-speed photodiodes often compromise responsivity in exchange for a reduced footprint. However, using waveguide photodiodes circumvents this limitation [1] . We combine uni-travelling-carrier photodiodes (UTC PDs) on a silicon nitride (SiN) photonic platform to achieve both high responsivity and high speed detectors. The SiN-platform has excellent properties such as low-loss waveguides and does not suffer from two-foton absorption at high optical power. A high responsivity is obtained through evanescent coupling of waveguide UTC photodiodes to SiN waveguides while still maintaining a small footprint.
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- 2021
6. Realization of fabrication-tolerant Si3N4-Si mode transformers
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Stijn Poelman, Stijn Cuyvers, Jasper De Witte, Bart Kuyken, and Dries Van Thourhout
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Materials science ,Fabrication ,Technology and Engineering ,Silicon ,business.industry ,coupled mode theory ,Mode (statistics) ,chemistry.chemical_element ,Laser ,law.invention ,chemistry ,law ,Mode transformer ,Optoelectronics ,business ,Transformer ,Realization (systems) ,microtransfer printing - Abstract
A III-V/Si/Si 3 N 4 structure critical in realizing high-performance lasers can be fabricated using microtransfer printing. This approach poses stringent requirements on the $\text{Si}_{3}\mathrm{N}_{4}-\text{Si}$ couplers. Accordingly, we realized $174\ \mu \mathrm{m}$ long, fabrication-tolerant Si tapers with simulated losses below 0.8 dB up to 750 nm misalignment.
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- 2021
7. Dual-comb spectroscopy with two on-chip III-V-on-silicon 1-GHz mode-locked lasers
- Author
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Nathalie Picqué, Jeong Hyun Huh, Gunther Roelkens, Zaijun Chen, K. Van Gasse, Stijn Poelman, Theodor W. Hänsch, Zhechao Wang, E. Vincentini, and Bart Kuyken
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Silicon photonics ,Materials science ,Technology and Engineering ,Spectrometer ,Silicon ,business.industry ,chemistry.chemical_element ,Physics::Optics ,Astrophysics::Cosmology and Extragalactic Astrophysics ,Laser ,Semiconductor laser theory ,law.invention ,Interferometry ,chemistry ,Mode-locking ,law ,Optoelectronics ,Physics::Atomic Physics ,business ,Spectroscopy - Abstract
A dual-comb interferometer with two semiconductor lasers on silicon photonic chips enables an optical resolution of 1 GHz, over a 0.7-THz span. The spectrometer di- rectly and unambiguously samples near-infrared rovibrational transitions without spectral interleaving.
- Published
- 2021
8. A hybrid integration strategy for compact, broadband, and highly efficient millimeter-wave on-chip antennas
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Stijn Poelman, Bart Smolders, Dries Vande Ginste, Lars De Brabander, A. C. F. Reniers, Steven Verstuyft, Olivier Caytan, Hendrik Rogier, Bart Kuyken, Laurens Bogaert, Quinten Van den Brande, Sam Lemey, Igor Lima de Paula, Stijn Cuyvers, Electromagnetics, Center for Wireless Technology Eindhoven, EM Antenna Systems Lab, EM-Metrology Lab, and Center for Care & Cure Technology Eindhoven
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Technology and Engineering ,Frequency band ,millimeter-wave (mmWave) ,on-chip antenna ,02 engineering and technology ,Hardware_PERFORMANCEANDRELIABILITY ,0202 electrical engineering, electronic engineering, information engineering ,Hardware_INTEGRATEDCIRCUITS ,System on a chip ,Antenna feed ,Electrical and Electronic Engineering ,Patch antenna ,Physics ,business.industry ,020206 networking & telecommunications ,high ,Chip ,Antenna efficiency ,high efficiency ,efficiency ,Extremely high frequency ,Optoelectronics ,ARRAY ,broadband ,Antenna (radio) ,business ,Air-filled substrate integrated waveguide (AFSIW) - Abstract
A novel hybrid integration strategy for compact, broadband, and highly efficient millimeter-wave (mmWave) on-chip antennas is demonstrated by realizing a hybrid on-chip antenna, operating in the [27.5–29.5] GHz band. A cavity-backed stacked patch antenna is implemented on a 600 $\mu$ m thick silicon substrate by using air-filled substrate-integrated-waveguide technology. A hybrid on-chip approach is adopted in which the antenna feed and an air-filled cavity are integrated on-chip, and the stacked patch configuration is implemented on a high-frequency printed circuit board (PCB) laminate that supports the chip. A prototype of the hybrid on-chip antenna is validated, demonstrating an impedance bandwidth of 3.7 GHz. In free-space conditions, a boresight gain of 7.3 dBi and a front-to-back ratio of 20.3 dB at 28.5 GHz are achieved. Moreover, the antenna is fabricated using standard silicon fabrication techniques and features a total antenna efficiency above 90% in the targeted frequency band of operation. The high performance, in combination with the compact antenna footprint of $\text{0.49}\,\lambda _{\rm min} \times \text{0.49}\,\lambda _{\rm min}$ , makes it an ideal building block to construct broadband antenna arrays with a broad steering range.
- Published
- 2019
9. Ultra-Dense III-V-on-Silicon Nitride Frequency Comb Laser
- Author
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Gunther Roelkens, Stijn Cuyvers, Artur Hermans, Stijn Poelman, Zheng Wang, Bahawal Haq, Bart Kuyken, Kasper Van Gasse, and Camiel Op de Beeck
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0301 basic medicine ,Technology and Engineering ,Materials science ,business.industry ,02 engineering and technology ,Nitride ,021001 nanoscience & nanotechnology ,Laser ,law.invention ,Optical pumping ,03 medical and health sciences ,chemistry.chemical_compound ,Frequency comb ,Laser linewidth ,030104 developmental biology ,Silicon nitride ,chemistry ,law ,Optical recording ,Optoelectronics ,Radio frequency ,0210 nano-technology ,business - Abstract
A heterogeneously integrated III-V-on-silicon nitride mode-locked laser is demonstrated. The device is fabricated by microtransfer printing an InP/InAlGaAs-based multiple-quantum-well coupon. A dense comb with a 755 MHz repetition rate, a 1 Hz ASE limited RF linewidth and a 200 kHz optical linewidth is achieved.
- Full Text
- View/download PDF
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