1. Electronic transport and conduction mechanism transition in La1/3Sr2/3FeO3 thin films.
- Author
-
Devlin, R. C., Krick, A. L., Sichel-Tissot, R. J., Xie, Y. J., and May, S. J.
- Subjects
ANTIFERROMAGNETIC resonance ,MOLECULAR beam epitaxy ,POLARONS ,STOICHIOMETRY ,MAGNETORESISTANCE - Abstract
We report on the electronic transport properties of epitaxial La
1/3 Sr2/3 FeO3 films using temperature dependent resistivity, Hall effect, and magnetoresistance measurements. We show that the electronic phase transition, which occurs near 190K, results in a change in conduction mechanism from nonadiabatic polaron transport at high temperatures to resistivity behavior following a power law temperature dependence at low temperatures. The phase transition is also accompanied by an abrupt increase in apparent mobility and Hall coefficient below the critical temperature (T*). We argue that the exotic low temperature transport properties are a consequence of the unusually long-range periodicity of the antiferromagnetic ordering, which also couples to the electronic transport in the form of a negative magnetoresistance below T* and a sign reversal of the Hall coefficient at T*. By comparing films of differing thicknesses, stoichiometry, and strain states, we demonstrate that the observed conduction behavior is a robust feature of La1/3 Sr2/3 FeO3 . [ABSTRACT FROM AUTHOR]- Published
- 2014
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