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Half-wave plate (HWP) is one of the key polarization controlling devices in optical systems. The conventional HWPs based on birefringent crystals are inherently bulky and difficult to be monolithically integrated with other optical components. In this work, metasurface-based HWPs with high compactness are demonstrated on a 12-inch silicon complementary metal-oxide-semiconductor platform. Three-dimensional finite difference time domain simulation is used to design the nanostructure and investigate the impact of fabrication process variation on the device performance. In addition, the cross- and co-polarization transmittance (Tcross and Tco) of the HWPs located at different wafer locations are characterized experimentally. The peak Tcross and valley Tco values of 0.69 ± 0.053 and 0.032 ± 0.005 are realized at the wavelength around 1.7 μm, respectively. This corresponds to a polarization conversion efficiency of 95.6% ± 0.8%.

infrared photodetectors have been used extensively in biomedicine, surveillance, communication and astronomy. however, state of the art technology based on Ⅲ-Ⅴ and Ⅱ-Ⅵ compounds still lacks excellent performance for high-temperature operation. surface plasmon polaritons (spps) have demonstrated their capability in improving the light detection from visible to infrared wave range due to their light confinement in subwavelength scale. advanced fabrication techniques such as electron-beam lithography (ebl) and focused ion-beam (fib), and commercially available numerical design tool like finite-difference time-domain (fdtd) have enabled rapid development of surface plasmon (sp) enhanced photodetectors. in this review article, the basic mechanisms behind the sp-enhanced photodetection, the different type of plasmonic nanostructures utilized for enhancement, and the reported sp-enhanced infrared photodetectors will be discussed.

We report a detailed comparative investigation of resonance behaviors and sensing capability of gold U-shape spilt-ring resonator (U-SRR) and fourfold rotated SRR (U4-SRR) metasurfaces in near- and middle-infrared (IR) range. All the resonant modes of the U4-SRR metasurfaces occur at longer wavelengths compared to the U-SRR metasurfaces with the same U size. Stronger field intensities are observed in all the three resonance modes of the U4-SRR metasurfaces and the intensity in the fundamental magnetic (m0) mode is almost three times of that of U-SRR metasurface under unpolarized incidence. All the three peak resonance wavelengths shift to longer wavelengths and the sensitivity increases with the increase of U size. A sensitivity of 642 nm RIU−1 is obtained in the U4-SRR metasurface for unpolarized incidence. This provides an excellent candidate for high performance sensing in the near- and mid-IR regions without polarization concern. [ABSTRACT FROM AUTHOR]

We report high quality GeSn/GaAs heterostructure photodetectors grown by a modified magnetron sputtering system. A metal-semiconductor-metal photoconductor is fabricated to examine the ability of photodetection for GeSn alloy. Then the GeSn/GaAs heterostructure photodetector is first demonstrated with a detectivity of $1.8\times 10^{9}$ Jones achieved at 1450 nm under an applied reverse voltage bias of −0.1 V, which is comparable to or even better than the GeSn-based photodetectors grown by chemical vapor deposition. The work provides an alternative technique for low cost and large-area fabrication of GeSn based devices. [ABSTRACT FROM AUTHOR]

Strong plasmon–exciton interactions in monolayer transition‐metal dichalcogenides (TMDs) is emerging as a promising material platform for light emissions, nonlinear optics, and quantum communications, and their realizations require highly localized electric fields parallel to the transition dipole moment of TMD excitons. Here, a systematic study of light–matter interaction in planar dimer nanoantenna of nanoscale gaps coupled with monolayer WS2 is presented, where the effects of the local field enhancement and spatial mode overlap in the plasmon–exciton coupling strength are experimentally investigated. Importantly, anticrossing behaviors in the strong coupling regime with a Rabi splitting of Ω = 118 meV for gold bowtie antennas with 7 nm gaps and Ω = 138 meV for gold dimer arrays with 10 nm gaps are demonstrated. [ABSTRACT FROM AUTHOR]

We report the growth of direct bandgap single-crystalline Ge1−xSnx thin films on unheated substrates by a modified magnetron sputtering system. The Ge1−xSnx thin films were deposited on Si, Ge, and GaAs substrates at room temperature. They were characterized by X-ray diffraction and X-ray photoelectron spectroscopy that revealed the existence of Ge1−xSnx (004) peak and Ge-Sn bonds. Transmission and photoluminescence (PL) measurements confirm the direct bandgap dominated transition, and the bandgap values obtained are in agreement with the results calculated by 8-band k.p method. This article provides a simple and cost-effect way for fabrication direct bandgap GeSn films. [ABSTRACT FROM AUTHOR]

Half-wave plate (HWP) is one of the key polarization controlling devices in optical systems. The conventional HWPs based on birefringent crystals are inherently bulky and difficult to be monolithically integrated with other optical components. In this work, metasurface-based HWPs with high compactness are demonstrated on a 12-inch silicon complementary metal-oxide-semiconductor platform. Three-dimensional finite difference time domain simulation is used to design the nanostructure and investigate the impact of fabrication process variation on the device performance. In addition, the cross- and co-polarization transmittance (Tcross and Tco) of the HWPs located at different wafer locations are characterized experimentally. The peak Tcross and valley Tco values of 0.69 ± 0.053 and 0.032 ± 0.005 are realized at the wavelength around 1.7 μm, respectively. This corresponds to a polarization conversion efficiency of 95.6% ± 0.8%. [ABSTRACT FROM AUTHOR]

We present the design, fabrication, and characterization of middle-wavelength infrared photodetector based on active InAs0.9Sb0.1-based hetero-p-i-n structure grown on GaSb substrate. In this structure, the active absorption layer is sandwiched between thin quaternary p-type and n-type AlInAsSb layers and a heavily doped AlGaSb layer is introduced to reduce dark current. We observed good lattice matching between GaSb substrates and epitaxial layers by high-resolution X-ray diffraction. Photoluminescence (PL) spectrum at 13 K shows a full width at half maximum of ~ 29 meV, demonstrating good quality active absorption layers. The band gap energy of InAs0.9Sb0.1 is derived as ~ 0.322 eV at 0 K by Varshni fitting from PL spectra at different temperatures. A rather flat room-temperature responsivity of ~ 0.8-0.9 AW−1 over a wavelength range of ~ 2.1 µm is demonstrated without antireflection coating. A detectivity of 8.9 × 108 cm Hz1/2 W−1 at 3.5 µm for room-temperature operation is achieved under applied bias of − 0.5 V. [ABSTRACT FROM AUTHOR]

Middle wavelength infrared (MWIR) photodetectors have a wide range of applications, but almost all of them operate at low temperature due to the limit of materials and device structures. The capability of plasmonic structures to localize electromagnetic wave on the deep subwavelength scale provides the possibility for MWIR photodetectors operating at room temperature. Here, we report a high sensitivity room temperature MWIR photodetector which is an InAs0.91Sb0.09-based heterojunction n-i-p photodiode integrated with a Au-based two-dimensional subwavelength hole array (2DSHA). A room temperature detectivity of 0.8 × 1010 cm Hz1/2 W−1 and a response time of 600 ns are achieved. The non-cooling high performance of 2DSHA-InAs0.91Sb0.09 based heterojunction photodetectors will make their applications easier, broader, and economic. [ABSTRACT FROM AUTHOR]

We present the effect of interface quality on the performance of InAsSb based hetero n-i -p middle wavelength infrared (MWIR) photodiodes. By adopting heavily doping wide bandgap p- and n-type layers and inserting a thin layer between the two doped layers and the absorbing InAsSb region, the interface quality can be improved. We also employed proper fabrication processes in device fabrication to improve surface quality. It is found that the improved interface and surface quality can reduce the noise current and enhance detection performance. A detectivity of ∼1.5 × 10 9 cmHz 1/2 W −1 can be achieved at room temperature, and it can be increased to ∼4.0 × 10 9 cmHz 1/2 W −1 at 250 K. [ABSTRACT FROM AUTHOR]

Ge x Sn 1-x is one of the most promising materials in optoelectronics for its direct band-gap nature. In this paper, we report high-quality Ge and Sn thin films deposited on Si (001) substrates by magnetron sputtering. We found that the growth power and chamber pressure affect the quality of the Ge and Sn thin films significantly but in different ways. By optimizing the deposition conditions, high quality Ge and Sn films are achieved. A clear peak of Ge (004) phase in the x-ray diffraction (XRD) pattern which indicates a high-quality Ge lattice formed is observed, and post-treatment like rapid thermal annealing does not significantly affect the quality of the thin films. [ABSTRACT FROM AUTHOR]

We prepare undoped Mn 1.5 Co 1 Ni 0.5 O 4 and Cu and Sc co-doped Mn 1.5 Co 1 Ni 0.25 Cu x Sc 0.25−x O 4 (x = 0.05, 0.1, 0.15) films on Al 2 O 3 substrate by chemical solution deposition method. The crystallinity, surface morphologies, electrical transport property, optical property, and 1/ f noise property of these films are characterized. It shows that the Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 film possesses excellent electrical transport, optical and 1/ f noise properties compared with the other films. The absolute temperature coefficient of resistance and characteristic temperature of the Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 film are higher than that of Mn 1.5 Co 1 Ni 0.5 O 4 film, while its resistivity of 250 Ω·cm at 295 K is half of that Mn 1.5 Co 1 Ni 0.5 O 4 film. The transmittance and reflectance spectra of the films are measured and analyzed in the range of 0.55–2.0 µm, all the films show similar absorption structures in the measured spectrum. The 1/ f noise of the co-doped Mn 1.5 Co 1 Ni 0.5 O 4 films decreases significantly. The (γ/n)0.5/| TCR | value of the Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 reaches 2.3 × 10−12 cm1.5 K/% at 295 K, which is two orders lower than that of Mn 1.5 Co 1 Ni 0.5 O 4 film. Our results discover a thermosensitive material with excellent performance, which is expected to be applied to high performance uncooled infrared detectors. • We did a complete and systematic study for the Cu and Sc co-dopants effects on the electrical transport, optical, and low-frequency noise properties of Mn 1.5 Co 1 Ni 0.5 O 4 (MCN) thin films. • Mn 1.5 Co 1 Ni 0.25 Cu 0.15 Sc 0.1 O 4 thin film was found to be excellent electrical transport, optical and low-frequency noise performance, and we investigated and discussed the mechanisms of enhanced performance of the Cu and Sc co-doped MCN films. • The optical and low-frequency noise properties of Cu and Sc Co-doped MCN films were studied for the first time. • This study provides an insight to understand the effects of Cu and Sc co-dopants on Mn 1.5 Co 1 Ni 0.5 O 4 thin films, which has great significance for preparing high-performance uncooled infrared detectors based on MCN films. [ABSTRACT FROM AUTHOR]

SiC x O y beaded carbon fibers were successfully fabricated for the first time using a facile and stable electrospinning and temperature process. The resulting fibers showcase a unique micro-nanocomposite structure, in which β-SiC beads with a silica-enriched surface are strung together with defect carbon fibers, as confirmed by XRD, XPS, and HRTEM investigation. The SiC x O y beaded carbon fibers display efficient microwave absorption performance, with a minimum reflection loss of -58.53 dB and an effective absorption bandwidth of 5.92 GHz. A modified Drude-Lorentz model was developed for SiC x O y beaded carbon fibers to reveal the double-peaked feature of the permittivity of these fibers, which is in good agreement with experimental measurements. Moreover, simulations were performed to extract polarized electric fields and microwave energy volume losses within a typical distribution of SiC x O y beaded carbon fibers. It is concluded that the dipole relaxation and hopping migration of localized electrons give a superior contribution to the overall decay of the microwave energy. This study indicates that SiC x O y beaded carbon fibers with a unique micro-nanocomposite structure hold great promise for microwave absorption applications. Additionally, this fabrication strategy offers a unique approach to producing micro-nanocomposite structures and highlights their potential applications.

The electromagnetic spectrum between microwave and infrared light is termed the "terahertz (THz) gap," of which there is an urgent lack of feasible and efficient room-temperature (RT) THz detectors. Type-II Weyl semimetals (WSMs) have been predicted to host significant RT topological photoresponses in low-frequency regions, especially in the THz gap, well addressing the shortcomings of THz detectors. However, such devices have not been experimentally realized yet. Herein, a type-II WSM (NbIrTe 4 ) is selected to fabricate THz detector, which exhibits a photoresponsivity of 5.7 × 10 4  V W -1 and a one-year air stability at RT. Such excellent THz-detection performance can be attributed to the topological effect of type-II WSM in which the effective mass of photogenerated electrons can be reduced by the large tilting angle of Weyl nodes to further improve mobility and photoresponsivity. Impressively, this device shows a giant intrinsic anisotropic conductance (σ max /σ min  = 339) and THz response (I ph-max /I ph-min  = 40.9), both of which are record values known. The findings open a new avenue for the realization of uncooled and highly sensitive THz detectors by exploring type-II WSM-based devices., (© 2022 Wiley-VCH GmbH.)

Maintaining the dynamical microwave synchronization between a target and its background is the key to electromagnetical invisibility in real environment. Herein, we introduce an archetypical paradigm for ultraelastic films of graphene-functionalized ionic gel with tunable microwave-absorbing behaviors. Inspired by the local structural changes during the wing-spreading process of vespertilionids, the experimental and finite element simulations have revealed that proper shape changing of 3D wrinkled structure containing ridge walls with moderate impedance is the effective way to minimize reflected wave and promote energy attenuation. An optimal RL value of -43.6 dB and valid regulatory amplitude of 41.5 dB, covering a microwave-absorbing to shielding state, could be reached with only 0.2% weight fraction of the active ingredient RGO filler. The significant regulatory performance is attributed to the competitive effect between intrinsic dielectric attenuation of silicon nitride modified reduced graphene oxide (RGO-SiN), multiscattering of a 3D wrinkled structure, and evolution of the oriented RGO-SiN.

Au-hole array and Au-GeSn grating structures were designed and incorporated in GeSn metal-semiconductor-metal (MSM) photodetectors for enhanced photo detection at 2 µm. Both plasmonic structures are beneficial for effective optical confinement near the surface due to surface plasmon resonance (SPR), contributing to an enhanced responsivity. The responsivity enhancement for Au hole-array structure is insensitive to the polarization direction, while the enhancement for Au-GeSn grating structure depends on the polarization direction. The responsivity for GeSn photodetector with Au hole-array structure has ∼50% reinforcement compared with reference photodetector. On the other hand, Au-GeSn grating structure benefits a 3× enhanced responsivity of 0.455 A/W at 1.5V under TM-polarized illumination. The achieved responsivity is among the highest values for GeSn photodetectors operating at 2 µm. The plasmonic GeSn photodetectors in this work offer an alternative solution for high-efficiency photo detection, manifesting their great potentials as candidates for 2 µm optical communication and other emerging applications.

Photonic structures have been attracting more attention due to their ability to capture, concentrate and propagate optical energy. In this work, we propose a photon-trapping hole-array structure integrated in a nip InAsSb-GaSb heterostructure for the enhancement of the photoresponse in both near- and mid-infrared regions. The proposed symmetrical hole array can increase the photon lifetime inside the absorption layer and reduce reflection without polarization dependence. Significant enhancements in absorption and photoelectric conversion efficiency are demonstrated in dual bands for unpolarized incidence. The enhancement factors of responsivity at room temperature under zero-bias are 1.12 and 1.33 for the near- and mid-infrared, respectively, and they are increased to 1.71 and 1.79 when temperature drops to the thermoelectric cooling temperature of 220 K. Besides, such an integrated hole array also slightly improves working frequency bandwidth and response speed. This work provides a promising way for high-efficiency polarization-independent photoelectric conversion in different electromagnetic wave ranges.

2D noble-transition-metal chalcogenides (NTMCs) are emerging as a promising class of optoelectronic materials due to ultrahigh air stability, large bandgap tunability, and high photoresponse. Here, a new set of 2D NTMC: Ta 2 PdS 6 atomic layers is developed, displaying the excellent comprehensive optoelectronic performance with an ultrahigh photoresponsivity of 1.42 × 10 6 A W -1 , detectivity of 7.1 × 10 10 Jones and a high photoconductive gain of 2.7 × 10 6 under laser illumination at a wavelength of 633 nm with a power of 0.025 W m -2 , which is ascribed to a photogating effect via study of the device band profiles. Especially, few-layer Ta 2 PdS 6 exhibits a good broadband photoresponse, ranging from 450 nm in the ultraviolet region to 1450 nm in the shortwave infrared (SIR) region. Moreover, this material also delivers an impressive electronic performance with electron mobility of ≈25 cm 2 V -1 s -1 , I on /I off ratio of 10 6 , and a one-year air stability, which is better than those of most reported 2D materials. Our studies underscore Ta 2 PdS 6 as a promising 2D material for nano-electronic and nano-optoelectronic applications., (© 2020 Wiley-VCH GmbH.)

A GeSn/Ge multiple-quantum-well (MQW) p-i-n photodiode structure was proposed for simultaneously realizing high detectivity photo detection with low dark current and effective optical modulation based on the quantum confined Stark (QCSE) effect. The MQW stacks were grown on a 300-mm Ge-buffered Si substrate using reduced pressure chemical vapor deposition (RPCVD). GeSn/Ge MQW p-i-n photodiodes with varying mesa diameters were fabricated and characterized. An ultralow dark current density of 16.3 mA/cm 2 at -1 V was achieved as expected due to the low threading dislocation density (TDD) in pseudomorphic GeSn layer. Owing to the ultralow dark current density and high responsivity of 0.307 A/W, a high specific detectivity of 1.37×10 10 cm·Hz 1/2 /W was accomplished at 1,550 nm, which is comparable with commercial Ge and extended-InGaAs photodetectors. Meanwhile, the bias voltage-dependent photo response was investigated from 1,700 to 2,200 nm. The extracted effective absorption coefficient of GeSn/Ge MQW shows a QCSE behavior with electric field-dependent exciton peaks from 0.688 to 0.690 eV. An absorption ratio of 1.81 under -2 V was achieved at 2 μm, which shows early promise for effective optical modulation. The high frequency response was calculated theoretically, and the predicted 3-dB bandwidth for the photodiode with a mesa diameter of 30 μm could reach 12 GHz at -2 V.

Metasurface with thin planar resonant elements offers great capability in manipulating electromagnetic waves and their interaction with semiconductors. Split-ring resonator (SRR), as the basic building block, has been extensively investigated for myriad applications owing to its multiple electric and magnetic resonant modes. In this work, we report a rotated fourfold U-shape SRR metasurface for polarization-insensitive strong enhancement of mid-infrared photodetection. The integrated photodetector consists of a rotated fourfold SRR array and an InAsSb based heterojunction photodiode. A photosensitivity enhancement factor as high as 11 has been achieved by adoption of superimposed high order magnetic and electric resonant modes in the SRR metasurface. This work provides a promising pathway for exploring high performance polarization-insensitive photodetection in different electromagnetic wave ranges.

We present the emergence of nanobridge networks through a nanofabrication technique based on image-reversal electron beam lithography and demonstrate plasmonic structures with high aspect ratio sub-20 nm gaps capable of strong intensity enhancement in the mid-infrared range. The proposed technique, which employs the engineering of natural formations of nanobridges in predefined templates, could serve as an alternative path for realizing mid-infrared plasmonic resonators with potential applications in surface plasmon polariton-based integrated optics, and enhancement of light-matter interaction for high efficiency photodetection and nanoscale light emitters.

All-InSb film-based and spiral antenna-assisted Au-InSb-Au metal-semiconductor-metal detector is reported with dual-band photoresponse in the infrared (IR) and millimeter wave range. At IR, the detector exhibits a long wavelength 100% cut-off at 7.3 µm. Under an applied bias of 5 mA, the uncooled blackbody responsivity and specific detectivity are 3.5 A/W and 1×10 8 Jones, respectively. The f -3dB value measured at 2.94 µm is 75 KHz, corresponding to a detector rise speed of 4.7 µs. At millimeter wave range, the detector shows a narrowband response determined by the coupling of the antenna. A voltage responsivity of 25 V/W is achieved at 167 GHz (1.796 mm) under an applied bias of 25 mA, and the corresponding noise equivalent power (NEP) is 1.0×10 -10 WHz -1/2 , which can be improved to 1.8×10 -12 WHz -1/2 if normalized to the real active semiconductor area. A f -3dB value of 17.5 KHz, corresponding to a detector rise speed of 20 µs is achieved in this range. A proof of principle for IR-modulated photoresponse for millimeter wave is achieved with a maximum modulation depth of 47.5%. This All-InSb film-based detector and the modulation are promising for future novel optoelectronic devices in IR and millimeter waves.

The implementation of polarization controlling components enables additional functionalities of short-wave infrared (SWIR) imagers. The high-performance and mass-producible polarization controller based on Si metasurface is in high demand for the next-generation SWIR imaging system. In this work, we report the first demonstration of all-Si metasurface based polarizing bandpass filters (PBFs) on 12-inch wafers. The PBF achieves a polarization extinction ratio of above 10 dB in power within the passbands. Using the complementary metal-oxide-semiconductor (CMOS) compatible 193nm ArF deep ultra-violet (DUV) immersion lithography and inductively coupled plasma (ICP) etch processing line, a device yield of 82% is achieved.

Surface plasmon polaritons (SPPs) have been attracting tremendous attention in application of enhanced optoelectronic devices owing to their capability of localizing electromagnetic waves in deep subwavelength scale. We propose a plasmonic mid-infrared InAsSb-based n-i-p photodiode with electrically-controlled photocurrent enhancement achieved by controlling the overlap between SPP depth and the absorption layer, from which maximum electrically controlled enhancement factors of ~5x and ~6x have been achieved for room temperature (293 K) and 77 K operation, respectively, corresponding to electrical tuning factors of 11.9 and 26. The maximum detectivities obtained at the two temperatures are 0.8 × 10 10 Jones and 5 × 10 11 Jones, respectively. This electrically controlled enhancement expands the application capability of plasmonic photodiodes.

Dual-band photodetection in mid- and near-wave infrared spectral bands is of scientific interest and technological importance. Most of the state-of-the-art mid-infrared photodetectors normally operate at low temperature and/or suffer from toxicity and high cost due to limitations of material properties and device structures. The capability of surface plasmons in confining electromagnetic waves into extremely small volume provides an opportunity for improving the performance for room temperature operation. Here, we report an n-InAsSb/n-GaSb heterostructure photodiode integrated with plasmonic two-dimensional subwavelength hole array (2DSHA) for room temperature two band photodetection. We demonstrate that with a properly designed 2DSHA, room temperature detectivities of the heterostructure device can be enhanced to ~1.4 × 10 9 Jones and ~1.5 × 10 11 Jones for the two bands peaked at 3.4 μm and 1.7 μm, respectively. In addition, we study the photocurrent enhancement in both photoconductor and heterojunction modes in the same integrated structure. The demonstration of single 2DSHA enhanced heterojunction photodiode brings a step closer to high sensitivity room temperature devices and systems which require multiband absorption.

Millimeter and terahertz wave photodetectors have long been of great interest due to a wide range of applications, but they still face challenges in detection performance. Here, we propose a new strategy for the direct detection of millimeter and terahertz wave photons based on localized surface-plasmon-polariton (SPP)-induced non-equilibrium electrons in antenna-assisted subwavelength ohmic metal-semiconductor-metal (OMSM) structures. The subwavelength OMSM structure is used to convert the absorbed photons into localized SPPs, which then induce non-equilibrium electrons in the structure, while the antenna increases the number of photons coupled into the OMSM structure. When the structure is biased and illuminated, the unidirectional flow of the SPP-induced non-equilibrium electrons forms a photocurrent. The energy of the detected photons is determined by the structure rather than the band gap of the semiconductor. The detection scheme is confirmed by simulation and experimental results from the devices, made of gold and InSb, and a room temperature noise equivalent power (NEP) of 1.5 × 10 -13 W Hz -1/2 is achieved.

Extreme sensitivity of room-temperature photoelectric effect for terahertz (THz) detection is demonstrated by generating extra carriers in an electromagnetic induced well located at the semiconductor, using a wrapped metal-semiconductor-metal configuration. The excellent performance achieved with THz detectors shows great potential to open avenues for THz detection., (© 2015 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We report aluminum based structures for manipulation of surface plasmon polariton (SPP) propagation at short wavelength range. Our simulation shows that aluminum is a good metal to excite and propagate SPPs with blue light and that the SPP wavelength can be reduced from about 465 nm to about 265 nm by monitoring the thickness of a coated Si(3)N(4) layer above the aluminum film. It is also shown that the damping becomes more significant with the increase of the thickness of the Si(3)N(4) layer. We also experimentally demonstrated the SPP wavelength tuning effect for 20nm Si(3)N(4) layer covered Al, which can be explained by the variation of effective permittivity. The proposed Metal-Insulator-Air (MIA) structures with SPP wavelength tuning ability have potential applications in 2D optics.