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The future redefinition of the international system of units in terms of natural constants requires a robust, high-precision quantum standard for the electrical base unit ampere. However, the reliability of any single-electron current source generating a nominally quantized output current I=ef by delivering single electrons with charge e at a frequency f is eventually limited by the stochastic nature of the underlying quantum mechanical tunneling process. We experimentally explore a path to overcome this fundamental limitation by serially connecting clocked single-electron emitters with multiple in situ single-electron detectors. Correlation analysis of the detector signatures during current generation reveals erroneous pumping events and enables us to determine the deviation of the output current from the nominal quantized value ef. This demonstrates the concept of a self-referenced single-electron source for electrical quantum metrology.

The quantitative measurement of the magnetization of individual magnetic nanoparticles (MNPs) using magnetic force microscopy (MFM) is described. Quantitative measurement is realized by calibration of the MFM signal using an MNP reference sample with traceably determined magnetization. A resolution of the magnetic moment of the order of 10(-18) A m(2) under ambient conditions is demonstrated, which is presently limited by the tip's magnetic moment and the noise level of the instrument. The calibration scheme can be applied to practically any magnetic force microscope and tip, thus allowing a wide range of future applications, for example in nanomagnetism and biotechnology., (Copyright © 2012 WILEY-VCH Verlag GmbH & Co. KGaA, Weinheim.)

We realize and investigate an all-semiconductor quantized voltage source which generates quantized output voltages V(out) = f(h/e) linked only to two fundamental constants, the electron's charge e and Planck's constant h, and to an applied excitation frequency f. The device is based on an integrated quantized circuit of a single-electron pump operated at pumping frequency f and a quantum Hall device monolithically integrated in series. Robust output voltages up to several μV are generated, which are expected to be scalable by orders of magnitude using present technology. The device might open a new route towards the closure of the quantum metrology triangle.

It is demonstrated that valence-band mixing in GaAs quantum wells tremendously modifies electronic transport. A coherent control scheme in which ultrafast currents are optically injected into undoped GaAs quantum wells upon excitation with femtosecond laser pulses is employed. An oscillatory dependence of the injection current amplitude and direction on the excitation photon energy is observed. A microscopic theoretical analysis shows that this current reversal is caused by the coupling of the light- and heavy-hole bands and that the hole currents dominate the overall current response. These surprising consequences of band mixing illuminate fundamental physics as they are unique for experiments which are able to monitor electronic transport resulting from carriers with relatively large momenta.

We demonstrate the coherent control of ultrafast shift currents in GaAs with two orthogonally polarized linearly chirped laser pulses. By varying the chirp and phase delay between the pulses, we achieve the control of the shape of the shift current transients in a wide range from a monopolar shape to different bipolar shapes (alternating currents). Moreover, the terahertz emission patterns resulting from the ultrafast shift currents allow one to determine the sign of the chirp of the laser pulses.

We investigate the adaptive optimization of broadband laser pulses, using a closed-loop learning algorithm in which the merit function is derived from two-photon absorption in semiconductors. Photoluminescence experiments with CdS thin films and photocurrent measurements of a GaAsP photodiode have been performed. The experimental data demonstrate that reliable and accurate pulse compression to the bandwidth limit can be achieved, unperturbed by nontrivial phase effects. Therefore two-photon absorption proves to be an easy-to-implement alternative to second-harmonic generation for the compression of broadband laser pulses.

We have developed an instrument for optically measuring carrier dynamics in thin-film materials with approximately 150 nm lateral resolution, approximately 250 fs temporal resolution and high sensitivity. This is accomplished by combining an ultrafast pump-probe laser spectroscopic technique with a near-field scanning optical microscope. A diffraction-limited pump and near-field probe configuration is used, with a novel detection system that allows for either two-colour or degenerate pump and probe photon energies, permitting greater measurement flexibility than that reported in earlier published work. The capabilities of this instrument are proven through near-field degenerate pump-probe studies of carrier dynamics in GaAs/AIGaAs single quantum well samples locally patterned by focused ion beam (FIB) implantation. We find that lateral carrier diffusion across the nanometre-scale FIB pattern plays a significant role in the decay of the excited carriers within approximately 1 microm of the implanted stripes, an effect which could not have been resolved with a far-field system.