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This paper has proposed a temperature insensitive current reference (CR) using Widlar current source. This CR has overwhelmed the direct relation of current to temperature present in Widlar current source. To obtain temperature insensitivity the proposed CR has been combined the complementary temperature behavior of current across MOSFET and BJT. Eldospice has supported the simulations of the proposed circuit using level 53, 0.18 µm CMOS technology with the help of EldoSpice. The proposed circuit has presented almost constant reference current of 63µA at a supply voltage of 1.8V for a temperature range of -30 to 100 °C. The proposed circuit has shown the maximum variation of 0.1µA as compared to 24.87µA in conventional Widlar current source. [ABSTRACT FROM AUTHOR]

A novel tuning principle for simple gyrator-based CMOS active inductor (AI) circuit is presented. The method makes use of Widlar current source to enhance the quality factor. The simulation of the proposed AI provides a maximum quality factor of 1819 at 2.88 GHz. The AI shows the inductive bandwidth of 1.66 GHz to 3.16 GHz and power consumption of 6.87 mW. The other characterization factors such as linearity, supply voltage sensitivity and noise analysis are discussed. The performance of the tunable AI using Widlar current source are compared with the same using a simple current mirror. An AI using a conventional current mirror (CCM) and Widlar current source have been implemented in the 0.18 μ m CMOS technology. [ABSTRACT FROM AUTHOR]

Abstract Author always arrived at inconsistent results by h-model and hybrid-pi model analysis. In 1981 low frequency Universal Hybrid-pi model was proposed as the correct small signal model of CE BJT. Looking for enhanced output impedance as predicted by proposed Model, variable latching was discovered in 1989. In the present paper, the output impedance of CE BJT current sources are measured experimentally and verified analytically and by PSpice Simulation using the three models namely conventional Hybrid-pi model, universal Hybrid –pi model and T-model. Universal Model gives the best fit with 5% margin of random error whereas conventional model systematically underestimates and T-model systematically overestimates. Hence the validation of proposed model is a definite advancement of frontiers of science. This in combination with an analytic result for predicting the latch-up of CE BJT will be used in Industrial Standards in future to capture variable latching phenomena in Computer-Aided-Design (CAD)of high speed Analog Circuits with variable drive conditions. One sentence summary: Universal Hybrid-pi is the most comprehensive, realistic and accurate model of CE BJT with a high degree of correlation between model and hardware. [ABSTRACT FROM AUTHOR]