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C18H19N5, triclinic, P1‾ $P\overline{1}$ (no. 2), a = 6.612(4) Å, b = 8.800(5) Å, c = 13.777(8) Å, α = 83.219(7)°, β = 79.329(6)°, γ = 78.744(6)°, V = 769.8(8) Å3, Z = 2, R gt(F) = 0.0394, wR ref(F 2) = 0.0996, T = 100(2) K.

Zn2C8H32N4O16S4${\text{Zn}}_{2}{\text{C}}_{8}{\text{H}}_{32}{\text{N}}_{4}{\text{O}}_{16}{\text{S}}_{4}$, triclinic, P1‾$P‾{1}$ (no. 2), a = 9.0313(9) Å, b = 9.6075(14) Å, c = 15.3044(15) Å, α = 89.933(2)°, β = 78.579(1)°, γ = 68.878(1)°, V = 1210.6(2) Å3, Z = 2, Rgt${R}_{gt}$(F) = 0.0323, wRref$w{R}_{\mathit{ref}}$(F2) = 0.1043, T = 100(2) K.

A late-model all-fiber mode-locked laser was introduced in this paper. This pulsed Er-doped fiber laser has a novel Sagnac loop structure and uses the tapered fiber coated with two-dimensional layer ferromagnetic insulator Cr2Si2Te6 as a saturable absorber in order to achieve passive mode locking. When the pump power was 167.6 mW, the laser worked at the fundamental repetition frequency of 19.1 MHz with a signal-to-noise ratio of 62.5 dB. The central wavelength of the spectrum was 1561.0 nm, and the maximum output power was 8.9 mW with a minimum pulse width of 5.2 ps. The mutual interference of beams makes the use of the saturable absorber more efficient. The results reveal that this Er-doped fiber laser has great application potential in nonlinear optics and ultrafast photonics. [ABSTRACT FROM AUTHOR]

Brazilin possesses anticancer effects, but the mechanisms are poorly understood. This study investigated the mechanisms of brazilin‐induced cell death in the T24 human bladder cancer cell line. Low serum cell culture and the lactate dehydrogenase assay were used to confirm the antitumor effect of brazilin. Annexin V and propidium iodide double staining, transmission electron microscopy, fluo‐3‐AM assay for Ca2+ mobilization and caspase activity assay were performed to identify the type of cell death after brazilin treatment. Mitochondria membrane potentials were measured using JC‐1. Quantitative real‐time polymerase chain reaction and western blot analyses were performed to verify the expression of the necroptosis‐related genes and proteins receptor interacting protein 1 (RIP1), RIP3 and mixed lineage kinase domain‐like (MLKL). The results showed that brazilin induced necrosis in T24 cells and upregulated the mRNA and protein levels of RIP1, RIP3 and MLKL and Ca2+ influx. The necroptosis‐mediated cell death was rescued by the necroptosis inhibitor necrostatin‐1 (Nec‐1), but not by the apoptosis inhibitor z‐VAD‐fmk. Brazilin repressed caspase 8 expression and decreased the mitochondrial membrane potentials; both effects were partially reversed by Nec‐1. Brazilin induced physiological and morphological changes in T24 cells and RIP1/RIP3/MLKL‐mediated necroptosis might be involved. In conclusion, the results confirm the involvement of necroptosis in brazilin‐induced cell death and suggest that brazilin could be explored as an anticancer agent against bladder cancer. [ABSTRACT FROM AUTHOR]

Two-dimensional (2D) semiconductors are being considered as alternative channel materials as silicon-based field-effect transistors (FETs) have reached their scaling limits. Recently, air-stable 2D selenium nanosheet FETs with a gate length of 5 µm were experimentally produced. In this study, we used an ab initio quantum transport approach to simulate sub-5 nm gate-length double-gate monolayer (ML) selenene FETs. When considering negative-capacitance technology and underlap, we found that 3 nm gate-length p-type ML selenene FETs can meet the 2013 ITRS standards for high-performance applications along the armchair and zigzag directions in the 2028 horizon. Therefore, ML selenene has the potential to be a channel material that can scale Moore's law down to a gate length of 3 nm. [ABSTRACT FROM AUTHOR]

Semiconductors with low dimensions have been presented when field-effect transistors (FETs) using silicon as a channel material approach their limits related to scale. Recently, 5 μm gate length selenium nanosheet FETs have been experimentally fabricated. An approach called ab initio quantum transport is implemented in this work to investigate the efficiency of sub-5 nm gate length gate-all-around (GAA) selenium nanowire FETs. The performances of the sub-5 nm gate length n-type GAA selenium nanowire FETs are superior to those of the p-type ones. Given the negative capacitance technology and underlap, the efficiency of 1 nm gate length n-type GAA selenium nanowire FETs could meet the benchmarks of the 2013 ITRS concerning usage related to high performance (HP) and low power (LP) in the perspective of 2028. Therefore, selenium nanowires are a suitable channel material of FETs that can extend Moore's law to 1 nm, making ultrashort selenium nanowires applicable for nanoelectronics. [ABSTRACT FROM AUTHOR]

Due to the existence of machining and installation errors, axis parallelism error of gear pairs occurs, which causes eccentric load and mesh in-out impact, thus weakening loaded transmission character. To solve this problem, the axis parallelism error of gear pairs was equated with tooth axial inclination error based on the gear-meshing principle. On this basis, we established the tooth modification model with tooth axial inclination error as the variable according to involute helical gear form-grinding process. Then, the degradation of loaded transmission character caused by axis parallelism error of gear pairs was quantitatively analyzed. The gear grinding, gear measuring, and gearbox vibration measuring were, respectively, performed on high-precision CNC horizontal gear form-grinding machine tool L300G, Gleason 350 GMS, and JWY-II multifunctional gearbox loading test bench. The results show that the proposed method can effectively reduce eccentric load and mesh in-out impact and significantly improve loaded transmission character. Therefore, it can provide a theoretical and experimental basis for the research of high-performance gear-grinding technology of gear-grinder machines. [ABSTRACT FROM AUTHOR]