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2. Observation of boron doping induced surface roughening in silicon molecular beam epitaxy.

Author

Lu, Xuenkun, Jiang, Zuimin, Zhu, Haijun, Zhang, Xiangjiu, and Wang, Xun

Subjects
SURFACE roughness, DOPED semiconductors, MOLECULAR beam epitaxy
Abstract

Examines the boron doping induced surface roughness in silicon molecular beam epitaxy. Change in the growth surface; Evolution of the roughening in the boron doping concentration; Attribution of surface roughening effect to boron segregation behavior.

Published
1996

3. Growth and characterization of silicon molecular beam epilayers on GaP (111) substrates.

Author

Jiang, Weidong, Zhou, Guoliang, Chen, Keming, Sheng, Chi, Zhang, Xiangjiu, and Wang, Xun

Subjects
MOLECULAR beam epitaxy, METALLURGICAL segregation, HETEROSTRUCTURES
Abstract

Silicon molecular beam epitaxy on thermally cleaned GaP(111) substrates has been prepared at 450 °C with the growth rate of 0.2 Å/s. The P segregation on the surface of Si epilayer beyond the thickness of 1500 Å has been observed. The surface of epilayer has the same (1×1) periodicity as that of the substrate when the thickness of the epilayer is less than 500 Å. Above 500 Å, the surface shows a (3×3) reconstruction. It is suggested that both (1×1) and (3×3) geometries are P-stabilized surface structures. [ABSTRACT FROM AUTHOR]

Published
1987
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