Search

Magnetic diffusion is of great importance in the domain of electromechanical energy conversion since it can be a performance-limiting mechanism. This paper deals with magnetic diffusion in the case of the rails of a railgun. The experiments benefit from the use of a new type of high magnetic-field sensor based on thin (< 1 [micro]m) manganite films, which exhibits a colossal magnetoresistance (CMR) effect and has very small sensitive areas (e.g., 0.5 mm x 50 [micro]m). Some basics about CMR and the design of the sensor are given. Several sensors were used and calibrated in the course of static transient railgun experiments. Here, varying spatial field distributions due to the use of different rail materials were recorded. Magnetic-field measurements during railgun operation with projectile velocities exceeding 1000 m/s have been successfully performed. By comparison with 3-D finite-element calculations, interesting results concerning magnetic diffusion have been worked out. Index Terms--Magnetoresistance, railguns, sensors, skin effect.

The accurate measurement of the magnetic field distribution during electromagnetic launch experiments is an ambitious task. Loop sensors are widely used for detecting the change in magnetic flux. However, this technique is mostly used only for qualitative purposes, e.g., for triggering various devices. This paper deals with the use of another type of high magnetic field sensor based on thin (< 1 [micro]m) manganite films, which exhibit the colossal magnetoresistance (CMR) effect. This sensor measures the magnitude of the magnetic induction and can have very small sensitive areas (e.g., 0.5 mm x 50 [micro]m). Some basics about CMR and the design of the sensor are given. Several sensors were used in experiments performed with the ISL-launcher EMA3 (Eprim = 0.6 MJ, l = 3 m, cal = 15 mm x 30 mm). Transient magnetic field profiles with rise times of approximately 50 [micro]s and amplitudes up to 4 T were recorded. The results obtained with the CMR sensors are compared with those of conventional loop sensors. Also, some metrological peculiarities due to high-frequency coupling to the detector circuit are mentioned. The highly local measurements of these CMR sensors were validated by results obtained from 3-D finite element (FE) calculations of the magnetic field distributions. Index Terms--Magnetoresistance, railguns, sensors, skin effect.

The electric and magnetic properties of microbridges made from 440 nm thick Y–Ba–Cu–O films prepared on Al2O3 substrates with CeO2 sublayers by the pulsed injection metal organic chemical vapor deposition (MOCVD) method were studied in temperatures ranging from 20 K to 300 K in order to investigate the possibilities of using these microbridges as fast fault current limiters. The application of an external magnetic field () causes the flux flow induced magneto-resistive effect, which is proportional to and to at low and high temperatures, respectively. The experimentally obtained S-shaped I–V characteristic and the change of the microbridge resistance over time when affected by a step-like magnetic field can be well explained using a thermo-electrical model based on Joule heating and the flux flow nature of the resistive state (RS). The transition from the superconducting to the RS, studied using ns duration rectangular waveform electrical pulses able to create up to ≈2106 A cm−2 current densities without rises of microbridge temperatures, demonstrated that the I–V characteristics of the RSs consisting of an assembly of straight lines corresponding to the different pinning centers. At temperatures close to the critical temperature of superconductivity, the number of these lines increases, and the I–V characteristics can be described with high accuracy by a power law. It was concluded that microbridges made from these films can be used as protectors against complicated waveform electromagnetic pulses having short rise times, high voltage peak amplitudes and long low-value over-current 'tails'. [ABSTRACT FROM AUTHOR]

The compact potentiometer, based on an electronic circuit protected from electrostatic and electromagnetic interference, was developed for the measurement of low ion concentrations in liquids. The electronic circuit of the potentiometer, consisting of analogous and digital parts, enables the measurement of fA currents. This makes it possible to perform reliable measurements of ion concentrations in liquids that are as small as 10−8-10−7M. The instrument was tested using electrodes that were selective for tetraphenylphosphonium (TPP+) ions. It was demonstrated that the characteristic response time of the potentiometer electronic circuit to changes in the concentration of these ions in a liquid was in the order of 10 s. An investigation of TPP+ absorption by baker yeast has shown that this device can be successfully used for long term (several hours) measurements with zero signal drift, which was about 1 μV/s. Finally, due to the small dimensions of the electronic circuit (7.5 × 2 × 1.5 cm), this potentiometer can be easily installed at a large apparatus in the laboratory condition (≈25 °C), such as high pulsed electrical generators of magnetic fields that are used in electroporation studies of biological cells. [ABSTRACT FROM AUTHOR]

The electrical field-induced changes of the yeast Saccharomyces cerevisiae cells permeabilization to tetraphenylphosphonium (TPP+) ions were studied using square-shaped, nanosecond duration high power electrical pulses. It was obtained that pulses having durations ranging from 10 ns to 60 ns, and generating electric field strengths up to 190 kV/cm significantly (up to 65 times) increase the absorption rate of TPP+ ions without any detectible influence on the yeast cell viability. The modelling of the TPP+ absorption process using a second order rate equation demonstrates that depending on the duration of the pulses, yeast cell clusters of different sizes are homogeniously permeabilized. It was concluded, that nanosecond pulse-induced permeabilization can be applied to increase the operational speed of whole cell biosensors. [ABSTRACT FROM AUTHOR]

Copyright of Electronics & Electrical Engineering is the property of Electronics & Electrical Engineering and its content may not be copied or emailed to multiple sites or posted to a listserv without the copyright holder's express written permission. However, users may print, download, or email articles for individual use. This abstract may be abridged. No warranty is given about the accuracy of the copy. Users should refer to the original published version of the material for the full abstract. (Copyright applies to all Abstracts.)

A new fast high-power fault current limiter made from epitaxial and polycrystalline \La0.83\Sr0.17\MnO3 thin films and operating at 80 K has been demonstrated. An epitaxial film that exhibits a current-induced increase in its resistance is connected in series with a 50-\Omega-impedance transmission line, while a polycrystalline film whose resistance decreases with an increase in current is connected in parallel. It has been demonstrated that, when the fault current pulse has an amplitude of 200 V, a rise time of 0.5 ns, and a pulselength of 18 ns, the limitation of its amplitude is 3.5 dB after the rise time and 8 dB at the end of the pulse. [ABSTRACT FROM AUTHOR]

The results of colossal magnetoresistance (CMR) properties of La1-xSrxMnyO3 (LSMO) films grown by the pulsed injection MOCVD technique onto an Al2O3 substrate are presented. The grown films with different Sr (0.05 ≤ x ≤ 0.3) and Mn excess (y > 1) concentrations were nanostructured with vertically aligned column-shaped crystallites spread perpendicular to the film plane. It was found that microstructure, resistivity, and magnetoresistive properties of the films strongly depend on the strontium and manganese concentration. All films (including low Sr content) exhibit a metal−insulator transition typical for manganites at a certain temperature, Tm. The Tm vs. Sr content dependence for films with a constant Mn amount has maxima that shift to lower Sr values with the increase in Mn excess in the films. Moreover, the higher the Mn excess concentration in the films, the higher the Tm value obtained. The highest Tm values (270 K) were observed for nanostructured LSMO films with x = 0.17−0.18 and y = 1.15, while the highest low-field magnetoresistance (0.8% at 50 mT) at room temperature (290 K) was achieved for x = 0.3 and y = 1.15. The obtained low-field MR values were relatively high in comparison to those published in the literature results for lanthanum manganite films prepared without additional insulating oxide phases. It can be caused by high Curie temperature (383 K), high saturation magnetization at room temperature (870 emu/cm3), and relatively thin grain boundaries. The obtained results allow to fabricate CMR sensors for low magnetic field measurement at room temperature.

The results of colossal magnetoresistance (CMR) properties of La 0.83 Sr 0.17 Mn 1.21 O 3 (LSMO) films grown by pulsed injection MOCVD technique onto various substrates are presented. The films with thicknesses of 360 nm and 60 nm grown on AT-cut single crystal quartz, polycrystalline Al 2 O 3 , and amorphous Si/SiO 2 substrates were nanostructured with column-shaped crystallites spread perpendicular to the film plane. It was found that morphology, microstructure, and magnetoresistive properties of the films strongly depend on the substrate used. The low-field MR at low temperatures (25 K) showed twice higher values (-31% at 0.7 T) for LSMO/quartz in comparison to films grown on the other substrates (-15%). This value is high in comparison to results published in literature for manganite films prepared without additional insulating oxides. The high-field MR measured up to 20 T at 80 K was also the highest for LSMO/quartz films (-56%) and demonstrated the highest sensitivity S = 0.28 V/T at B = 0.25 T (voltage supply 2.5 V), which is promising for magnetic sensor applications. It was demonstrated that Mn excess Mn/(La + Sr) = 1.21 increases the metal-insulator transition temperature of the films up to 285 K, allowing the increase in the operation temperature of magnetic sensors up to 363 K. These results allow us to fabricate CMR sensors with predetermined parameters in a wide range of magnetic fields and temperatures.

In this paper, we investigated the behavior of a type II superconducting armature when accelerated by a pulsed magnetic field generated by a single-stage pancake coil. While conducting this investigation, we performed a numerical finite element simulation and an experimental study of the magnetic field dynamics at the edge of the pancake coil when the payload was a superconducting disc made from YBa 2 Cu 3 O 7 - x , cooled down to 77 K. The magnetic field measurements were performed using a CMR-B-scalar sensor, which was able to measure the absolute magnitude of the magnetic field and was specifically manufactured in order to increase the sensor's sensitivity up to 500 mT. It was obtained that type II superconducting armatures can outperform normal metals when the launch conditions are tailored to their electromagnetic properties., Competing Interests: The authors declare no conflict of interest.

The possibility of applying CMR-B-scalar sensors made from thin manganite films exhibiting the colossal magnetoresistance effect as a fast-nondestructive method for the evaluation of the quality of the magnetic pulse welding (MPW) process is investigated in this paper. This method based on magnetic field magnitude measurements in the vicinity of the tools and joining parts was tested during the electromagnetic compression and MPW of an aluminum flyer tube with a steel parent. The testing setup used for the investigation allowed the simultaneous measurement of the flyer displacement, its velocity, and the magnitude of the magnetic field close to the flyer. The experimental results and simulations showed that, during the welding of the aluminum tube with the steel parent, the maximum magnetic field in the gap between the field shaper and the flyer is achieved much earlier than the maximum of the current pulse of the coil and that the first half-wave pulse of the magnetic field has two peaks. It was also found that the time instant of the minimum between these peaks depends on the charging energy of the capacitors and is associated with the collision of the flyer with the parent. Together with the first peak maximum and its time-position, this characteristic could be an indication of the welding quality. These results were confirmed by simultaneous measurements of the flyer displacement and velocity, as well as a numerical simulation of the magnetic field dynamics. The relationship between the peculiarities of the magnetic field pulse and the quality of the welding process is discussed. It was demonstrated that the proposed method of magnetic field measurement during magnetic pulse welding in combination with subsequent peel testing could be used as a nondestructive method for the monitoring of the quality of the welding process.

An investigation of the yeast cell resealing process was performed by studying the absorption of the tetraphenylphosphonium (TPP + ) ion by the yeast Saccharomyces cerevisiae. It was shown that the main barrier for the uptake of such TPP + ions is the cell wall. An increased rate of TPP + absorption after treatment of such cells with a pulsed electric field (PEF) was observed only in intact cells, but not in spheroplasts. The investigation of the uptake of TPP + in PEF treated cells exposed to TPP + for different time intervals also showed the dependence of the absorption rate on the PEF strength. The modelling of the TPP + uptake recovery has also shown that the characteristic decay time of the non-equilibrium (PEF induced) pores was approximately a few tens of seconds and this did not depend on the PEF strength. A further investigation of such cell membrane recovery process using a florescent SYTOX Green nucleic acid stain dye also showed that such membrane resealing takes place over a time that is like that occurring in the cell wall. It was thus concluded that the similar characteristic lifetimes of the non-equilibrium pores in the cell wall and membrane after exposure  to  PEF indicate a strong coupling between these parts of the cell.

An increasing demand of magnetic field sensors with high sensitivity at room temperatures and spatial resolution at micro-nanoscales has resulted in numerous investigations of physical phenomena in advanced materials, and fabrication of novel magnetoresistive devices. In this study the novel magnetic field sensor based on combination of a single layer graphene (SLG) and thin nanostructured manganite La 0.8 Sr 0.2 MnO 3 (LSMO) film-hybrid graphene-manganite (GM) structure, is proposed and fabricated. The hybrid GM structure employs the properties of two materials-SLG and LSMO-on the nanoscale level and results in the enhanced sensitivity to magnetic field of the hybrid sensor on the macroscopic level. Such result is achieved by designing the hybrid GM sensor in a Wheatstone half-bridge which enables to employ in the device operation two effects of nanomaterials-large Lorentz force induced positive magnetoresistance of graphene and colossal negative magnetoresistance of nanostructured manganite film, and significantly increase the sensitivity S of the hybrid GM sensor in comparison with the individual SLG and LSMO sensors: S = 5.5 mV T -1 for SLG, 14.5 mV T -1 for LSMO and 20 mV T -1 for hybrid GM at 0.5 T, when supply voltage was 1.249 V. The hybrid GM sensor operates in the range of (0.1-2.3) T and has lower sensitivity to temperature variations in comparison to the manganite sensor. Moreover, it can be applied for position sensing. The ability to control sensor's characteristics by changing technological conditions of the fabrication of hybrid structure and tuning the nanostructure properties of manganite film is discussed.

The demand to increase the sensitivity to magnetic field in a broad magnetic field ranges has led to the research of novel materials for sensor applications. Therefore, the hybrid system consisting of two different magnetoresistive materials - nanostructured Co-doped manganite La 1-x Sr x (Mn 1-y Co y ) z O 3 and single- and few-layer graphene - were combined and investigated as potential system for magnetic field sensing. The negative colossal magnetoresistance (CMR) of manganite-cobaltite and positive one of graphene gives the possibility to increase the sensitivity to magnetic field of the hybrid sensor. The performed magnetoresistance (MR) measurements of individual few layer (n = 1-5) graphene structures revealed the highest MR values for three-layer graphene (3LG), whereas additional Co-doping increased the MR values of nanostructured manganite films. The connection of 3LG graphene and Co-doped magnanite film in a voltage divider configuration significantly increased the sensitivity of the hybrid sensor at low and intermediate magnetic fields (1-2 T): 70 mV/VT of hybrid sensor in comparison with 56 mV/VT for 3LG and 12 mV/VT for Co-doped magnanite film, respectively, and broadened the magnetic field operation range (0.1-20) T of the produced sensor prototype.

In the present study the advantageous pulsed-injection metal organic chemical vapour deposition (PI-MOCVD) technique was used for the growth of nanostructured La 1- x Sr x Mn y O 3±δ (LSMO) films on ceramic Al 2 O 3 substrates. The compositional, structural and magnetoresistive properties of the nanostructured manganite were changed by variation of the processing conditions: precursor solution concentration, supply frequency and number of supply sources during the PI-MOCVD growth process. The results showed that the thick (≈400 nm) nanostructured LSMO films, grown using an additional supply source of precursor solution in an exponentially decreasing manner, exhibit the highest magnetoresistance and the lowest magnetoresistance anisotropy. The possibility to use these films for the development of magnetic field sensors operating at room temperature is discussed.

The permeability of the yeast cells (Saccharomyces cerevisiae) to lipophilic tetraphenylphosphonium cations (TPP(+) ) after their treatment with single square-shaped strong electric field pulses was analyzed. Pulsed electric fields (PEF) with durations from 5 to 150 µs and strengths from 0 to 10 kV/cm were applied to a standard electroporation cuvette filled with the appropriate buffer. The TPP(+) absorption process was analyzed using an ion selective microelectrode (ISE) and the plasma membrane permeability was determined by measurements obtained using a calcein blue dye release assay. The viability of the yeast and the inactivation of the cells were determined using the optical absorbance method. The experimental data taken after yeasts were treated with PEF and incubated for 3 min showed an increased uptake of TPP(+) by the yeast. This process can be controlled by setting the amplitude and pulse duration of the applied PEF. The kinetics of the TPP(+) absorption process is described using the second order absolute rate equation. It was concluded that the changes of the charge on the yeast cell wall, which is the main barrier for TPP(+) , is due to the poration of the plasma membrane. The applicability of the TPP(+) absorption measurements for the analysis of yeast cells electroporation process is also discussed., (© 2013 Wiley Periodicals, Inc.)