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In this paper, we demonstrate electrical degradation due to hot carrier injection (HCI) stress for PLDMOS device. The lower gate current and the IDsat degradation at low gate voltage (VGS) and high drain voltage (VDS) is investigated. Hot Electrons, generated by impact ionization during stress, are injected into the gate oxide, creating negative fixed oxide charges and interface-states above the accumulation region and the channel. Increase of the drain-source current is induced by the negative fixed oxide charges. The physical model of the degradation has been proven combining experimental data and TCAD simulations.

Recycled concrete is a kind of concrete which is constructed by crushing and removing the building waste and concrete blocks and mixing them according to a certain proportion after grading. In this study, the applicability of recycled concrete is studied only in terms of impermeability.