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1. A monolithic 5.8 GHZ power amplifier in a 25 GHZ FT Silicon Bipolar technology

Author

Simbürger, W., Bakalski, W., Kehrer, D., Wohlmuth, H.D., Rest, M., Aufinger, K., Boguth, S., and Scholtz, A. L.

Subjects
ING-INF/01 Elettronica
Abstract

A monolithic integrated radio-frequency power amplifier for the 5.8 GHz band has been realized in a 25 GHz-fT Si-bipolar production technology (B6HF). The 2-stage push-pull type power amplifier uses a planar on-chip transformer as input-balun and for interstage matching. A high-current cascode stage is used for the driver and for the output stage. At 2.7 V, 3.6 V, and 5 V supply voltage a maximum output power of 21.9 dBm, 24 dBm and 26 dBm at 5.8 GHz is achieved. The small-signal gain is 20 dB.

Published
2001

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