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Saviformuojantys puslaidininkiniai kvantiniai taškai (quantum dots, QDs), kurių charakteringos elektronų subjuostinių (intraband) šuolių energijos yra infraraudonajame spektriniame ruože (3–25 μm), sudaro daugelio fotojutiklių aktyviąją terpę ir yra aktualūs taikymams šiuolaikinėje optoelektronikoje. Disertacijoje nagrinėjami molekulinio pluoštelio epitaksijos būdu užauginti: -- InAs kvantiniai taškai, įterpti į GaAs matricą ir GaAs/AlAs supergardelę; -- InAs kvantiniai taškai be ir su įtempimus sumažinančiuoju InGaAs sluoksniu, įterpti į kompozitinę GaAs/AlAs kvantinę duobę; -- skirtingo aukščio koloniniai InGaAs kvantiniai taškai arba kvantiniai strypeliai (quantum rods, QRs), apsupti dvimačiu InGaAs sluoksniu, ir užauginti naudojant arba As2, arba As4 šaltinį. Taikant moduliacinę atspindžio spektroskopiją ir fotoliuminescenciją, buvo ištirtos šių darinių optinės savybės bei jų elektroninė sandara, o taip pat atskleista auginimo sąlygų įtaka darinių struktūrai. Eksperimentiniai tyrimai buvo interpretuojami atliekant teorinį modeliavimą skaitmeniniu (nextnano3 programa) bei analitiniu (sukurtas algoritmas) metodais. Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling.

Self-assembled InAs quantum dots (QDs), whose intersublevel transition energies lie in the mid- and far-infrared spectral range (3–25μm), have attracted particular interest as active elements of infrared photodetectors. This interest is mainly due to intriguing atomic-like quantum confinement and unique optical and electronic properties of QDs. Moreover, QD electronic structure can be adjusted by varying the dots size and shape or their environment. These features make QDs to be of importance in creation of photoelectronic devices with a desired spectral range. The dissertation is concerned specifically with molecular beam epitaxy grown InGaAs QD structures with: -- InAs QD stacks embedded in GaAs matrix and GaAs/AlAs superlattice (SL), or alternatively InAs/GaAs QD-SL structures with and without AlAs barriers between the dot layers; -- InAs QDs with and without InGaAs strain-reducing layers, embedded within GaAs/AlAs quantum wells; -- columnar InGaAs QDs, also referred to as quantum rods (QRs) or quantum posts, of different morphology. (The quantum confined structure consists of vertically oriented InGaAs QRs immersed in a two-dimensional InGaAs layer). These QD structures were studied by modulated reflectance and photo- luminescence spectroscopies to reveal their optical properties and the full- extent of electronic structure. Experimental data were interpreted by numerical (nextnano3 software) and analytical (algorithm developed) modelling.