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The formation of stable periphyton communities is undesirable for all types of hydrotechnical systems, especially functioning watercooling systems. To combat the development of biological fouling in the cooling ponds of nuclear power plants bioreclamation species are widely used, which include Mozambican tilapia. It was unintentionally brought into the cooling reservoir of the Novovoronezh nuclear power plant; however, it formed a stable and numerous population there. The food base for the fi sh population in the cooling pond is depleted due to diffi cult (sometimes extreme) environmental conditions, which can lead to competition for food items. Under these conditions, tilapia switches to feeding on bacterial-algal mats, which develop abundantly in the warm-water part of the reservoir. In areas eaten by tilapia, the biomass of fouling is reduced by one and a half times and the content of mineral substances decreases. The study of the contents of the intestines of tilapia made it possible to confi rm these observations, since representatives of the phytoperiphyton were found in the food bolus: cyanoprokaryotes, diatoms and green algae, for which even a taxonomic affi liation was established. The results of the research made it possible to clarify the mechanism o f integration of this southern species into the ichthyocenosis of the reservoir and its positive role in reducing biofouling.

In the paper, the influence of growth factors and silicon surface condition on the epitaxial formation of single-domain GaP buffer layers on Si (001) has been studied. A novel two-stage growth technique for the epitaxial building-up of this structure has been put forward and developed. In contrast to using the migration enhanced epitaxy technique, the proposed technology allows one to separate the nucleation and growth stages, to control the doping profile of the GaP buffer layers. The latter is important for further functional applications. The main factors determining the orientation of GaP crystalline lattice when it nucleates on the Si vicinal surface were found. The structural perfection of the grown buffer layers at both stages was proved through careful control by TEM, RHEED, AFM, and HRXRD. These findings have important implications for further functional applications.

The paper presents the results of numerical simulation of the heterostructural diodes operation based on the array of indium arsenide nanowires on the silicon substrates with different polarities, namely n- or p-types. It has been found that it is possible to achieve theoretical values of the ideality factor equal to 1.1 and 2.1 respectively. The high quantum efficiency values are typical for the investigated heterostructures during separation of photogenerated charge carriers in the temperature range of 150–300 K.