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Yb/p-Si Schottky diodes were fabricated by thermal evaporation method. The measurements of current-voltage (I-V) and capacitance-voltage (C-V) of these diodes were carried out at room temperature and dark. The parameters such as ideality factor (n), zero-bias barrier height (Φbo) and series resistance (Rs) of these diodes were obtained by using I-V data whereas some electrical parameters such as Fermi energy level (EF), density of acceptor atoms (NA) and barrier height [Фb(C-V)] were calculated by using C-2-V characteristics. The value of n was calculated as 1.59 while the value of Φbo was determined as 0.75 eV from forward bias I-V characteristic. The values of EF, NA ve Фb(C-V) were obtained as 0.15 eV, 5.27x1015 cm-3 and 0.67 eV from C-2-V characteristic, respectively. Also, the values of n, Фb and Rs were calculated from the functions of Cheung and Norde. According to the findings, Yb/p-Si Schottky diodes have low leakage current, good rectifier rate and high barrier height. These results showed that Yb is an attractive element to obtain high quality Schottky diode. [ABSTRACT FROM AUTHOR]