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In this paper, using a scanning electron microscope (SEM) and atomic analysis, the location map of microcomposites formed on the surface of n-Si, p-Si, n-Si and p-Si samples was studied. Force microscope (AFM) research devices. The atomic fractions of inclusions of carbon, oxygen and lutetium formed on the surface of the samples were studied. Also, using the ASM device, the sizes, relief and topographic appearance of defects formed on the surface of the samples were determined. In silicon samples doped with Lu, a decrease in the size of surface defects and the formation of nano-sized structures were found, which makes it possible to obtain materials with a more perfect crystal structure. Using a ZEISS GeminiSEM 300 scanning electron microscope, the structural structure, chemical composition and images of their arrangement of n-Si, p-Si, n-Si and p-Si samples were obtained. In this case, the electron accelerating voltage was 20 kV, and the pressure in the sample chamber was (10-3 mmHg). Research results show that the structural structure of micro- and nanocomposites formed in silicon mainly depends on the diffusion time and cooling rate of the samples after diffusion annealing.

The paper reports the sharp increase in resistivity and the conductivity change (type) in the single-crystal silicon sample doped with vanadium. The electrical and optical properties of single-crystalline silicon were determined Hall- and four-probe measurements and infrared (IR-) spectroscopy. Relative resistance, charge carrier concentration, mobility, and concentration of optically active oxygen and carbon in the samples were determined layer-by-layer. It is shown that in silicon samples doped with vanadium the concentration of optically active oxygen atoms tends to reduce.