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The effective cross-plane thermal conductivity of AlN thin films is studied using 3ω method. AlN films 1-3 µm thick are synthesized on single-crystal Si and Al substrates without heating in a hybrid helicon-arc ion-plasma reactor with a helicon plasma source and plasma-arc accelerators combined in one process chamber. The resulting films at the interface with the substrate had a thin layer of disordered AlN about 200 nm thick. A high value of the thermal conductivity coefficient ⋅Si = 82.9 W/(m⋅K) is obtained for films synthesized on Si substrates. On Al substrates, the value λAl = 45.8 W/(m⋅K) is obtained, which is the highest among those known for Al metal substrates, which are widely used for cooling LED devices. The thermal resistance Rq of the boundary between AlN films and substrates, which is one of the most important parameters in the creation of a cooling system for electronic devices, is estimated. For the AlN/Si interface, the value Rq intSi = 2.3⋅10-8 (m²⋅K)/W is obtained, and for the AlN/Al interface, AlN/Al is Rq intAl = 4.3⋅10-8 (m² ⋅K/W). [ABSTRACT FROM AUTHOR]