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Direct lifetime measurements via gamma -gamma coincidences using a fast timing detector array consisting of LaBr3(Ce) scintillators has been applied to determine the lifetime of low-lying states in the semimagic (N = 50) nucleus Ru-94. The experiment was carried out as the first in a series of "FAIR-0" experiments with the DESPEC experimental setup at the Facility for Antiproton and Ion Research (FAIR). Excited states in Ru-94 were populated primarily via the beta-delayed proton emission of Pd-95 nuclei, produced in the projectile fragmentation of an 850 MeV/nucleon Xe-124 beam impinging on a 4 g/cm(2) Be-9 target. While the deduced E2 strength for the 2(+) -> 0(+) transition in the yrast cascade follows the expected behavior for conserved seniority symmetry, the intermediate 4(+) -> 2(+) transition exhibits a drastic enhancement of transition strength in comparison with pure-seniority model predictions as well as standard shell model predictions in the f pg proton hole space with respect to doubly magic Sn-100. The anomalous behavior is ascribed to a subtle interference between the wave function of the lowest seniority v = 2, I-pi = 4(+) state and that of a close-lying v = 4 state that exhibits partial dynamic symmetry. In addition, the observed strongly prohibitive 6(+) -> 4(+) transition can be attributed to the same mechanism but with a destructive interference. It is noted that such effects may provide stringent tests of the nucleon-nucleon interactions employed in state-of-the-art theoretical model calculations.

The low-lying excited states in the neutron-deficient $N = Z + 1$ nucleus $^{87}_{43}$Tc$_{44}$ have been studied via the fusion-evaporation reaction $^{54}$Fe $(^{36}Ar, 2n1p)$ $^{87}$Tc at the Grand Accelerateur National d'Ions Lourds (GANIL), France. The AGATA spectrometer was used in conjunction with the auxiliary NEDA, Neutron Wall, and DIAMANT detector arrays to measure coincident prompt γ rays, neutrons, and charged particles emitted in the reaction. A level scheme of $^{87}$Tc from the $(9/2^+_{g.s})$ state to the $( 33 / 2^+_1$) state was established based on six mutually coincident γ -ray transitions. The constructed level structure exhibits a rotational behavior with a sharp backbending at $ℏω ≈ 0.50$ MeV. A decrease in alignment frequency and increase in alignment sharpness in the odd-mass isotonic chains around $N=44$ is proposed as an effect of the enhanced isoscalar neutron-proton interactions in odd-mass nuclei when approaching the $N=Z$ line.

Anomalous doping characteristics of III-V nitrides are explained on the basis of experimental methods. To our knowledge, this is the first successful experimental attempt to address the doping difficulties with the p- and n-type Iii-V nitrides. GaN is used as the test system. Our results strongly suggest that N vacancies (VN), creating donor-like states at or very near the conduction-band edge, are responsible for natural n-type doping characteristics of undoped samples. The samples cannot be doped p type even by introducing a large content of p-type dopant atoms, unless the natural n-type character is nullified by minimizing the presence of VN . This can be done by increasing the ammonia flow rate significantly during epitaxial growth. However, excessive flow of ammonia leads to the generation of donor-like N antisites. Compensation of holes of the acceptor states by electrons of these donor-like states, and he high binding energy of the acceptor atoms hinder the realization of high p-type doping.

Gallium nitride is a highly promising wide band gap semiconductor with applications in high power electronic and optoelectronic devices. Among the devices considered for high power generation is the ubiquitous field‐effect transistors which require Schottky barriers for modulating the channel mobile charge. It is in this context that we have undertaken an investigation of likely metal‐GaN contacts. Here we report on the electrical conduction and other properties of Pt–GaN Schottky diodes. These Schottky diodes were fabricated using n‐GaN grown by the molecular beam epitaxy method. Both capacitance–voltage and current–voltage measurements have been carried out as a function of temperature to gain insight into the processes involved in current conduction. Based on these measurements, physical mechanisms responsible for electrical conduction at low and high voltages and temperatures have been suggested. Schottky barrier height determined from the current–voltage and capacitance–voltage measurements is close to 1.10 eV.

Molecular‐beam‐epitaxial GaN layers change from strongly conductive (ρ≂10−2 Ω cm at 300 K) to semi‐insulating (ρ≂106 Ω cm) as the N flux is increased. Layers grown at low fluxes show strong n‐type conduction, with transport in the conduction band at high temperatures and in a shallow donor band at low temperatures. For layers grown at high N fluxes, the Hall coefficients become too small to measure, suggesting hopping conduction among deep centers. The temperature‐dependent resistivity data are most consistent with multiphonon, rather than single‐phonon, hopping.

High quality GaN layer growth by reactive molecular beam epitaxy employing ammonia gas as a nitrogen source and with high growth rates (∼2 μm/h) is described. The high crystalline quality of the layer is evidenced by our recently reported modulation‐doped field‐effect transistors, GaN/AlGaN separate confinement heterostructures, GaN/AlGaN quantum wells, high quality Schottky contacts, long excitonic lifetime, and GaN epitaxial layers that exhibit only intrinsic transitions even with the second excited states of excitonic transitions visible in the emission spectra. The dependence of background carrier concentration and resistivity on substrate temperature is studied. The hexagonal nature of wurtzite GaN manifests itself as hexagonal features on the film, becoming as large as ∼5 μm with facets at high growth temperatures (e.g., 800 °C). For low V/III ratios, large hexagonal hillocks, with highly strained regions on them, are formed due to the localized preferential growth. The photoluminescence characteris...

The emission and reflection spectra of GaN have been investigated in the intrinsic region and the data have been interpreted in terms of the wurtzite crystal band structure. Three intrinsic exciton transitions have been observed, one associated with each of the valence bands. Exciton excited states associated with the two top valence bands were also observed. The exciton binding energies, the band‐gap energies, and the exciton Bohr radii are all reported along with the dielectric constant and the spin‐orbit and crystal‐field parameters for GaN.

A thermally stimulated current peak, occurring at 100 K for a heating rate of 0.4 K/s, has been found in semi‐insulating GaN grown by molecular beam epitaxy. This peak has contributions from two traps, with the main trap described by the following parameters: emission thermal activation energy E≂90±2 meV, effective capture cross‐section σ≂3±1×10−22 cm−2, and Nμτ≂3±1 × 1014 cm−1 V −1, where N is the trap concentration, μ the mobility, and τ the free‐carrier lifetime. This trap is much deeper than the typical shallow donors in conducting GaN, but shallower than any of the centers reported in recent deep level transient spectroscopy measurements.

A new metallization scheme has been developed for obtaining very low Ohmic contact to n‐GaN. The metallization technique involves the deposition of a composite metal layer Ti/Al/Ni/Au (150 A/2200 A/400 A/500 A) on n‐GaN preceded by a reactive ion etching (RIE) process which most likely renders the surface highly n type. Of the several attempts and with annealing at 900 °C for 30 s, contacts with specific resistivity values of ρs=8.9×10−8 Ω cm2 or lower for a doping level of 4×1017 cm−3 were obtained. The physical mechanism underlying the realization of such a low resistivity is elucidated.