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Interdigitated back-contact (IBC) architectures are the best performing technology in crystalline Si (c-Si) photovoltaics (PV). Although single junction perovskite solar cells have now surpassed 23% efficiency, most of the research has mainly focussed on planar and mesostructured architectures. The number of studies involving IBC devices is still limited and the proposed architectures are unfeasible for large scale manufacturing. Here we discuss the importance of IBC solar cells as a powerful tool for investigating the fundamental working mechanisms of perovskite materials. We show a detailed fabrication protocol for IBC perovskite devices that does not involve photolithography and metal evaporation. The interview is available at https://youtu.be/nvuNC29TvOY.

We explore the degradation behaviour under continuous illumination and direct oxygen exposure of inverted unencapsulated formamidinium(FA)0.83Cs0.17Pb(I0.8Br0.2)3, CH3NH3PbI3, and CH3NH3PbI3−xClx perovskite solar cells. We continuously test the devices in-situ and in-operando with current-voltage sweeps, transient photocurrent, and transient photovoltage measurements, and find that degradation in the CH3NH3PbI3−xClx solar cells due to oxygen exposure occurs over shorter timescales than FA0.83Cs0.17Pb(I0.8Br0.2)3 mixed-cation devices. We attribute these oxygen-induced losses in the power conversion efficiencies to the formation of electron traps within the perovskite photoactive layer. Our results highlight that the formamidinium-caesium mixed-cation perovskites are much less sensitive to oxygen-induced degradation than the methylammonium-based perovskite cells, and that further improvements in perovskite solar cell stability should focus on the mitigation of trap generation during ageing.

Halide perovskites are promising semiconductors for inexpensive, high-performance optoelectronics. Despite a remarkable defect tolerance compared to conventional semiconductors, perovskite thin films still show substantial microscale heterogeneity in key properties such as luminescence efficiency and device performance. This behavior has been attributed to spatial fluctuations in the population of sub-bandgap electronic states that act as trap-mediated non-radiative recombination sites. However, the origin of the variations, trap states and extent of the defect tolerance remains a topic of debate, and a precise understanding is critical to the rational design of defect management strategies. By combining scanning X-ray diffraction beamlines at two different synchrotrons with high-resolution transmission electron microscopy, we reveal levels of heterogeneity on the ten-micrometer scale (super-grains) and even ten-nanometer scale (sub-grain domains). We find that local strain is associated with enhanced defect concentrations, and correlations between the local structure and time-resolved photoluminescence reveal that these strain-related defects are the cause of non-radiative recombination. We reveal a direct connection between defect concentrations and non-radiative losses, as well as complex heterogeneity across multiple length scales, shedding new light on the presence and influence of structural defects in halide perovskites.

The incorporation of noble metal nanoparticles, displaying localized surface plasmon resonance, in the active area of donor-acceptor bulk-heterojunction organic photovoltaic devices is an industrially compatible light trapping strategy, able to guarantee better absorption of the incident photons and give an efficiency improvement between 12% and 38%. In the present work, we investigate the effect of Au and Ag nanoparticles blended with P3HT: PCBM on the P3HT crystallization dynamics by synchrotron grazing incidence X-ray diffraction. We conclude that the presence of (1) 80nm Au, (2) mix of 5nm, 50nm, 80nm Au, (3) 40nm Ag, and (4) 10nm, 40nm, 60nm Ag colloidal nanoparticles, at different concentrations below 0.3 wt% in P3HT: PCBM blends, does not affect the behaviour of the blends themselves.

Atomic Force Microscopy (AFM) and Grazing Incidence X-Ray Diffraction (GI-XRD) are used to characterize the nanomorphology of spin-coated low (LMW, Mn = 12 kg/mol, regioregularity RR = 84%) and high (HMW, Mn = 39 kg/mol, RR = 98%) molecular weight poly(3-hexylselenophene) (P3HS) films and blend films of P3HS with [6,6]-phenyl-C61-butyric acid methyl ester (PCBM), before and after thermal annealing at 250 {\deg}C.