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Single-port ferroelectric FET (FeFET) that performs write and read operations on the same electrical gate prevents its wide application in tunable analog electronics and suffers from read disturb, especially to the high-threshold voltage (VTH) state as the retention energy barrier is reduced by the applied read bias. To address both issues, we propose to adopt a read disturb-free dual-port FeFET where write is performed on the gate featuring a ferroelectric layer and the read is done on a separate gate featuring a non-ferroelectric dielectric. Combining the unique structure and the separate read gate, read disturb is eliminated as the applied field is aligned with polarization in the high-VTH state and thus improving its stability, while it is screened by the channel inversion charge and exerts no negative impact on the low-VTH state stability. Comprehensive theoretical and experimental validation have been performed on fully-depleted silicon-on-insulator (FDSOI) FeFETs integrated on 22 nm platform, which intrinsically has dual ports with its buried oxide layer acting as the non-ferroelectric dielectric. Novel applications that can exploit the proposed dual-port FeFET are proposed and experimentally demonstrated for the first time, including FPGA that harnesses its read disturb-free feature and tunable analog electronics (e.g., frequency tunable ring oscillator in this work) leveraging the separated write and read paths., Comment: 32 pages

The pivotal issue of reliability is one of colossal concern for circuit designers. The driving force is transistor aging, dependent on operating voltage and workload. At the design time, it is difficult to estimate close-to-the-edge guardbands that keep aging effects during the lifetime at bay. This is because the foundry does not share its calibrated physics-based models, comprised of highly confidential technology and material parameters. However, the unmonitored yet necessary overestimation of degradation amounts to a performance decline, which could be preventable. Furthermore, these physics-based models are exceptionally computationally complex. The costs of modeling millions of individual transistors at design time can be evidently exorbitant. We propose the revolutionizing prospect of a machine learning model trained to replicate the physics-based model, such that no confidential parameters are disclosed. This effectual workaround is fully accessible to circuit designers for the purposes of design optimization. We demonstrate the models' ability to generalize by training on data from one circuit and applying it successfully to a benchmark circuit. The mean relative error is as low as 1.7%, with a speedup of up to 20X. Circuit designers, for the first time ever, will have ease of access to a high-precision aging model, which is paramount for efficient designs. This work is a promising step in the direction of bridging the wide gulf between the foundry and circuit designers.

Recent Deep Neural Networks (DNNs) managed to deliver superhuman accuracy levels on many AI tasks. Several applications rely more and more on DNNs to deliver sophisticated services and DNN accelerators are becoming integral components of modern systems-on-chips. DNNs perform millions of arithmetic operations per inference and DNN accelerators integrate thousands of multiply-accumulate units leading to increased energy requirements. Approximate computing principles are employed to significantly lower the energy consumption of DNN accelerators at the cost of some accuracy loss. Nevertheless, recent research demonstrated that complex DNNs are increasingly sensitive to approximation. Hence, the obtained energy savings are often limited when targeting tight accuracy constraints. In this work, we present a dynamically configurable approximate multiplier that supports three operation modes, i.e., exact, positive error, and negative error. In addition, we propose a filter-oriented approximation method to map the weights to the appropriate modes of the approximate multiplier. Our mapping algorithm balances the positive with the negative errors due to the approximate multiplications, aiming at maximizing the energy reduction while minimizing the overall convolution error. We evaluate our approach on multiple DNNs and datasets against state-of-the-art approaches, where our method achieves 18.33% energy gains on average across 7 NNs on 4 different datasets for a maximum accuracy drop of only 1%., Comment: Accepted for publication at the 40th International Conference On Computer Aided Design (ICCAD 2021)

This thesis investigates the challenge of providing an abstracted, yet sufficiently accurate reliability estimation for embedded on-chip systems. In addition, it also proposes new techniques to increase the reliability of register files within processors against aging effects and soft errors. It also introduces a novel thermal measurement setup that perspicuously captures the infrared images of modern multi-core processors.