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We found that temperature-dependent infrared spectroscopy measurements (i.e., reflectance or transmittance) using a Fourier-transform spectrometer can have substantial errors, especially for elevated sample temperatures and collection using an objective lens (e.g., using an infrared microscope). These errors arise as a result of partial detector saturation due to thermal emission from the measured sample reaching the detector, resulting in nonphysical apparent reduction of reflectance or transmittance with increasing sample temperature. Here, we demonstrate that these temperature-dependent errors can be corrected by implementing several levels of optical attenuation that enable "convergence testing" of the measured reflectance or transmittance as the thermal-emission signal is reduced, or by applying correction factors that can be inferred by looking at the spectral regions where the sample is not expected to have a substantial temperature dependence.

One of the essential prerequisites for detection of Earth-like extra-solar planets or direct measurements of the cosmological expansion is the accurate and precise wavelength calibration of astronomical spectrometers. It has already been realized that the large number of exactly known optical frequencies provided by laser frequency combs ('astrocombs') can significantly surpass conventionally used hollow-cathode lamps as calibration light sources. A remaining challenge, however, is generation of frequency combs with lines resolvable by astronomical spectrometers. Here we demonstrate an astrocomb generated via soliton formation in an on-chip microphotonic resonator ('microresonator') with a resolvable line spacing of 23.7 GHz. This comb is providing wavelength calibration on the 10 cm/s radial velocity level on the GIANO-B high-resolution near-infrared spectrometer. As such, microresonator frequency combs have the potential of providing broadband wavelength calibration for the next-generation of astronomical instruments in planet-hunting and cosmological research.

The mechanism of DC-Electric-Field-Induced Second-Harmonic (EFISH) generation at weakly nonlinear buried Si(001)-SiO$_2$ interfaces is studied experimentally in planar Si(001)-SiO$_2$-Cr MOS structures by optical second-harmonic generation (SHG) spectroscopy with a tunable Ti:sapphire femtosecond laser. The spectral dependence of the EFISH contribution near the direct two-photon $E_1$ transition of silicon is extracted. A systematic phenomenological model of the EFISH phenomenon, including a detailed description of the space charge region (SCR) at the semiconductor-dielectric interface in accumulation, depletion, and inversion regimes, has been developed. The influence of surface quantization effects, interface states, charge traps in the oxide layer, doping concentration and oxide thickness on nonlocal screening of the DC-electric field and on breaking of inversion symmetry in the SCR is considered. The model describes EFISH generation in the SCR using a Green function formalism which takes into account all retardation and absorption effects of the fundamental and second harmonic (SH) waves, optical interference between field-dependent and field-independent contributions to the SH field and multiple reflection interference in the SiO$_2$ layer. Good agreement between the phenomenological model and our recent and new EFISH spectroscopic results is demonstrated. Finally, low-frequency electromodulated EFISH is demonstrated as a useful differential spectroscopic technique for studies of the Si-SiO$_2$ interface in silicon-based MOS structures., Comment: 31 pages, 14 figures, 1 table, figures are also available at http://kali.ilc.msu.su/articles/50/efish.htm