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The ferroelectric (FE)–antiferroelectric (AFE) transition in Hf1–xZrxO2(HZO) is for the first time shown in a metal–ferroelectric–semiconductor (MFS) stack based on the III-V material InAs. As InAs displays excellent electron mobility and a narrow band gap, the integration of ferroelectric thin films for nonvolatile operations is highly relevant for future electronic devices and motivates further research on ferroelectric integration. When increasing the Zr fractionxfrom 0.5 to 1, the stack permittivity increases as expected, and the transition from FE to AFE-like behavior is observed by polarization and current–voltage characteristics. Atx= 0.8 the polarization of the InAs-based stacks shows a larger FE-contribution as a more open hysteresis compared to both literature and reference metal–ferroelectric–metal (MFM) devices. By field-cycling the devices, the switching domains are studied as a function of the cycle number, showing that the difference in FE–AFE contributions for MFM and MFS devices is stable over switching and not an effect of wake-up. The FE contribution of the switching can be accessed by successively lowering the bias voltage in a proposed pulse train. The possibility of enhanced nonvolatility in Zr-rich HZO is relevant for device stacks that would benefit from an increase in permittivity and a lower operating voltage. Additionally, an interfacial layer (IL) is introduced between the HZO film and the InAs substrate. The interfacial quality is investigated as frequency-dependent capacitive dispersion, showing little change for varying ZrO2concentrations and with or without included IL. This suggests material processing that is independently limiting the interfacial quality. Improved endurance of the InAs-Hf1–xZrxO2devices withx= 0.8 was also observed compared tox= 0.5, with further improvement with the additional IL for Zr-rich HZO on InAs.

InSb has the smallest bandgap and highest electron mobility among III-V semiconductors and is widely used for photodetectors and high-frequency electronic applications. Integration of InSb directly on Si would drastically reduce the fabrication cost and enable new applications, however, it is very challenging due to its 19% lattice mismatch with Si. Herein, the integration of single-crystalline InSb microstructures on insulator-covered Si through rapid melt growth (RMG) is reported and specifically provides details on the fabrication process. The importance of achieving high-quality conformal capping layers at low thermal budget to contain the InSb melt is assessed when the sample is annealed. The importance of ensuring a pristine Si seed area to achieve single-crystalline InSb is illustrated and demonstrated here for the first time.