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The flavour and aroma of chillies is because of the presence of capsaicinoids. Among the capsaicinoids, 90% of the pungency is due to the presence of capsaicin (8-methyl-N-vanillyl-trans-6-nonenamide) and dihydrocapsaicin. From the perspective of the food and pharmaceutical industry, capsaicin being used as an active component, there is a need to find a quicker method of estimating capsaicin. Also it is imperative to determine and standardize a fingerprint of chilli extract of different varieties, to define a pure sample containing capsaicin by determining a marker peak for capsaicin, using HPTLC. Hence in this study capsaicin was estimated by HPLC, GC-MS and HPTLC methods. This study has successfully demonstrated a quick chromatographic separation of capsaicin by HPLC with Rt of just 2.9 min. GC-MS showed the capsaicin peak at Rt of 25.9 min. The fingerprint results of HPTLC indicated capsaicin at Rf 0.03 using Toluene: Ethyl Acetate (70:3) as mobile phase and Iodine vapours as detecting reagent. Besides, the Methanolic extracts of Capsicum annuum showed good antimicrobial activity with very negligible antioxidant properties. Byadgi chilli extract showed the most intense red brown colour with λmax at 500 nm and it thus justified its use as the most preferred one for contributing to colour in food. Keeping in mind the importance in the food industry, and monitoring of raw materials in the pharmaceutical industry, the methods of HPTLC and HPLC can be used to authenticate chilli powders available in the market and in pharmaceutical products for quick estimation of capsaicin.

The solar cell structure based on copper indium gallium diselenide (CIGS) as the absorber layer, cadmium sulfide (CdS) as a buffer layer un-doped (i) and Aluminium (Al) doped zinc oxide (ZnO) as a window layer was simulated using the one dimensional simulation program called analysis of microelectronic and photonic structures (AMPS-1D). In the simulation, the thickness of CIGS layer was varied from 300 to 3000 nm. The rest of layer’s thicknesses were kept constant, viz. 60 nm for CdS, and 80 nm and 500 nm for i- and Al-ZnO, respectively. By varying thickness of CIGS layer the simulated device performance was demonstrate in the form of current-voltage (I-V) characteristics and quantum efficiency (QE). When you are citing the document, use the following link http://essuir.sumdu.edu.ua/handle/123456789/22096