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Nanoscale, low-phase-noise, tunable transmitter-receiver links are key for enabling the progress of wireless communication. We demonstrate that vortex-based spin-torque nano-oscillators, which are intrinsically low-noise devices because of their topologically protected magnetic structure, can achieve frequency tunability when submitted to local ion implantation. In the experiments presented here, the gyrotropic mode is excited with spin-polarized alternating currents and anisotropic magnetoresistance measurements yield discrete frequencies from a single device. Indeed, chromium-implanted regions of permalloy disks exhibit different saturation magnetization than neighboring, non-irradiated areas, and thus different resonance frequency, corresponding to the specific area where the core is gyrating. Our study proves that such devices can be fabricated without the need for further lithographical steps, suggesting ion irradiation can be a viable and cost-effective fabrication method for densely packed networks of oscillators.

Interfaces separating ferromagnetic (FM) layers from non-ferromagnetic layers offer unique properties due to spin-orbit coupling and symmetry breaking, yielding effects such as exchange bias, perpendicular magnetic anisotropy, spin-pumping, spin-transfer torques, conversion between charge and spin currents and vice-versa. These interfacial phenomena play crucial roles for magnetic data storage and transfer applications, which require forming FM nano-structures embedded in non-ferromagnetic matrices. Here, we investigate the possiblity of creating such nano-structures by ion-irradiation. We study the effect of lateral confinement on the ion-irradiation-induced reduction of non-magnetic metal oxides (e.g., antiferro- or paramagnetic) to form ferromagnetic metals. Our findings are later exploited to form 3-dimensional magnetic interfaces between Co, CoO and Pt by spatially-selective irradiation of CoO/Pt multilayers. We demonstrate that the mechanical displacement of the O atoms plays a crucial role during the reduction from insulating, non-ferromagnetic cobalt oxides to metallic cobalt. Metallic cobalt yields both perpendicular magnetic anisotropy in the generated Co/Pt nano-structures, and, at low temperatures, exchange bias at vertical interfaces between Co and CoO. If pushed to the limit of ion-irradiation technology, this approach could, in principle, enable the creation of densely-packed, atomic scale ferromagnetic point-contact spin-torque oscillator (STO) networks, or conductive channels for current-confined-path based current perpendicular-to-plane giant magnetoresistance read-heads., Comment: This document is the Accepted Manuscript version of a Published Work that appeared in final form in ACS Applied Materials and Interfaces copyright \c{opyright} American Chemical Society after peer review and technical editing by the publisher. To access the final edited and published work see https:// pubs.acs.org/articlesonrequest/AOR-rPGr2e7nZ7tzzwK3tnBZ

Understanding of the metal-insulator transition (MIT) in correlated transition-metal oxides is a fascinating topic in condensed matter physics and a precise control of such transitions plays a key role in developing novel electronic devices. Here we report an effective tuning of the MIT in epitaxial $\mathrm{SrV}{\mathrm{O}}_{3}$ (SVO) films by expanding the out-of-plane lattice constant without changing in-plane lattice parameters, through helium ion irradiation. Upon increase of the ion fluence, we observe a MIT with a crossover from metallic to insulating state in SVO films. A combination of transport and magnetoresistance measurements in SVO at low temperatures reveals that the observed MIT is mainly ascribed to electron-electron interactions rather than disorder-induced localization. Moreover, these results are well supported by the combination of density functional theory and dynamical mean-field theory calculations, further confirming the decrease of the bandwidth and the enhanced electron-electron interactions resulting from the expansion of the out-of-plane lattice constant. These findings provide insights into the understanding of MIT in correlated oxides and perspectives for the design of unexpected functional devices based on strongly correlated electrons.