1. Postdeposition Annealing On Rf-Sputtered Srtio3 Thin Films
- Author
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Turkan Bayrak, Eda Goldenberg, Necmi Biyikli, Seda Kizir, and Enver Kahveci
- Subjects
Infrared devices ,Materials science ,Annealing (metallurgy) ,Thin films ,Scanning electron microscopy image ,Analytical chemistry ,02 engineering and technology ,Crystallite size ,Optical and electrical properties ,01 natural sciences ,Annealing ,Amorphous materials ,Crystallinity ,Surface roughness ,0103 physical sciences ,Post deposition annealing ,Strontium alloys ,Thin film ,010302 applied physics ,Visible and near infrared ,business.industry ,Device performance ,Surfaces and Interfaces ,Radio frequency magnetron sputtering ,Sputter deposition ,021001 nanoscience & nanotechnology ,Condensed Matter Physics ,Annealing temperatures ,Nanocrystalline material ,Nanocrystals ,Polycrystalline phasis ,Surfaces, Coatings and Films ,Amorphous solid ,Carbon film ,Strontium titanates ,Optoelectronics ,Crystallite ,Amorphous films ,0210 nano-technology ,business ,Scanning electron microscopy ,Magnetron sputtering - Abstract
Understanding of structural, optical, and electrical properties of thin films are very important for a reliable device performance. In the present work, the effect of postdeposition annealing on stoichiometric SrTiO3 (STO) thin films grown by radio frequency magnetron sputtering at room temperature on p-type Si (100) and quartz substrates were studied. Highly transparent and well adhered thin films were obtained in visible and near infrared regions. As-deposited films were amorphous, while nanocrystalline and polycrystalline phases of the STO thin films formed as a function of annealing temperature. Films annealed at 300 degrees C showed nanocrystallinity with some amorphous phase. Crystallization started after 15 min annealing at 700 degrees C, and further improved for films annealed at 800 degrees C. However, crystallinity reduced for films which were annealed at 900 degrees C. The optical and electrical properties of STO thin films affected by postdeposition annealing at 800 degrees C: E-g values decreased from 4.50 to 4.18 eV, n(lambda) values (at 550 nm) increased from 1.81 to 2.16. The surface roughness increased with the annealing temperature due to the increased crystallite size, densification and following void formation which can be seen from the scanning electron microscopy images. The highest dielectric constants (46 at 100 kHz) observed for films annealed at 800 degrees C; however, it was lower for 300 degrees C annealed (25 at 100 kHz) and as-deposited (7 at 100 kHz) STO films having similar to 80 nm thickness. (C) 2017 American Vacuum Society.
- Published
- 2017