1. Configurational statistical model for the damaged structure of silicon oxide after ion implantation
- Author
-
Carlos Domínguez, Josep M. Montserrat, Joan Ramon Morante, Josep Samitier, B. Garrido, and Universitat de Barcelona
- Subjects
Fotoemissió ,Photoelectron spectroscopy ,Effect of radiation on materials ,Materials science ,Ion implantation ,Espectroscòpia de fotoelectrons ,Statistical model ,Efecte de les radiacions sobre els materials ,Atomic physics ,Silicon oxide ,Photoemission ,Molecular physics - Abstract
A configurational model for silicon oxide damaged after a high-dose ion implantation of a nonreactive species is presented. Based on statistics of silicon-centered tetrahedra, the model takes into account not only the closest environment of a given silicon atom, but also the second neighborhood, so it is specified whether the oxygen attached to one given silicon is bridging two tetrahedra or not. The frequencies and intensities of infrared vibrational bands have been calculated by averaging over the distributions and these results are in agreement with the ones obtained from infrared experimental spectra. Likewise, the chemical shifts obtained from x-ray photoelectron spectroscopy (XPS) analysis are similar to the reported values for the charge-transfer model of SiOx compounds.
- Published
- 1994
- Full Text
- View/download PDF