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Advanced organic vapor sensors that simultaneously have high sensitivity, fast response, and good reproducibility are required. Herein, flexible, robust, and conductive vapor-grown carbon fibers (VGCFs)-filled polydimethylsiloxane (PDMS) porous composites (VGCFs/PDMS sponge (CPS)) with multilevel pores and thin, rough, and hollows wall were prepared based on the sacrificial template method and a simple dip-spin-coating process. The optimized material showed outstanding mechanical elasticity and durability, good electrical conductivity and hydrophobicity, as well as excellent acid and alkali tolerance. Additionally, CPS exhibited good reproducible sensing behavior, with a high sensitivity of ~1.5 × 105 s−1 for both static and flowing organic vapor, which was not affected in cases such as 20% squeezing deformation or environment humidity distraction (20~60% RH). Interestingly, both the reproducibility and sensitivity of CPS were better than those of film-shaped VGCFs/PDMS (CP), which has a thickness of two hundred microns. Therefore, the contradiction between the reproducibility and high sensitivity was well-solved here. The above excellent performance could be ascribed to the unique porous structures and the rough, thin, hollow wall of CPS, providing various gas channels and large contact areas for organic vapor penetration and diffusion. This work paves a new way for developing advanced vapor sensors by optimizing and tailoring the pore structure.

A GaN-based high electron mobility transistor (HEMT) with p-GaN islands buried layer (PIBL) for terahertz applications is proposed. The introduction of a p-GaN island redistributes the electric field in the gate–drain channel region, thereby promoting the formation of electronic domains in the two-dimensional electron gas (2DEG) channel. The formation and regulation mechanism of the electronic domains in the device are investigated using Silvaco-TCAD software. Simulation results show that the 0.2 μm gate HEMT with a PIBL structure having a p-GaN island doping concentration (N p) of 2.5 × 1018 cm−3–3 × 1018 cm−3 can generate stable oscillations up to 344 GHz–400 GHz under the gate–source voltage (V gs) of 0.6 V. As the distance (D p) between the p-GaN island and the heterojunction interface increases from 5 nm to 15 nm, the fundamental frequency decreases from 377 GHz to 344 GHz, as well as the ratio of oscillation current amplitude of the fundamental component to the average component I f/I avg ranging from 2.4% to 3.84%.