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Bi2S3 is a n-type (negative type) semiconductor that has a narrow band gap and an ideal band edge position for hydrogen generation. However, high charge recombination rate, low photoelectrochemical (PEC) efficiency and poor stability are of major concerns of Bi2S3 as a photoelectrode. Herein, we report an efficient Vanadium-rich Bi2S3 nanowires (atomic ratio of V to Bi is 1/22) that have been prepared on fluorine-doped tin oxide (FTO) substrate by an in-situ solution-processed reaction with BiVO4 film as precursor. The resulting V-rich photoelectrode demonstrates notably high charge separation efficiency and fast charge transport with respect to pristine Bi2S3 nanowires. As a result, the photocurrent density of ca. 10 mA·cm−2 at -0.2 V vs Ag/AgCl is obtained under visible light illumination. In addition, V-rich Bi2S3 generates IPCE (incident photocurrent-to-current conversion efficiency) of 50% at 460 nm and 45% at 760 nm, demonstrating a 2.0 and 2.8-fold increase, respectively, when compared with pristine Bi2S3. This enhancement is probably due to increased light absorption, less charge recombination, and faster charge transfer. More importantly, in contrast to pristine Bi2S3 sample that suffers detrimental photocorrosion in sulfide containing electrolyte, V-rich Bi2S3 nanowires retain 84.6% of its initial photocurrent over the course of 1 h. These findings are expected to shed light on engineering high-performance and robust metal sulfide materials for photoelectrochemical application.

Tubular hematite with high-concentration, uniform doping is regarded as a promising material for photoelectrochemical water oxidation. However, the high-temperature annealing commonly used for activating doped hematite inevitably causes deformation of the tubular structure and an increase in the trap states. In the present work, Sn-doped tubular hematite on fluorine-doped tin oxide (FTO) is successfully obtained at 750 °C from a Sn-coated FeOOH tube precursor. Sn/P codoping, which is rarely considered for hematite, is also achieved via a gas phase reaction in phosphide atmosphere. The tubular morphology allows the dopant to diffuse from both the inner and outer surfaces, thus decreasing the doping profile in the radial direction. The even distribution of Sn and P synergetically increases the carrier density of hematite by one order of magnitude, which shortens the width of the depletion layer to ca. 2.3 nm (compared with 19.3 nm for the pristine sample) and leads to prolonged carrier lifetime and efficient charge separation. In addition, this codoping protocol does not introduce additional surface trap states, as evidenced by the increased charge injection efficiency and surface kinetic analysis using intensity modulated photocurrent spectroscopy (IMPS). As a result, the morphology- and doping-engineered hematite exhibits photocurrents of 0.9 mA cm-2 at 1.23 V and 3.8 mA cm-2 at 2.0 V vs. RHE under AM 1.5 G illumination (100 mW cm-2) in 1.0 M NaOH, representing 4.5-fold and 4.8-fold enhancements, respectively, compared with the photocurrents of undoped hematite. The present method is shown to be effective for preparing multi-element-doped hematite nanotubes and may find broad application in the development of other nanotubular photoelectrodes with or without doping for efficient and robust water oxidation.

Developing high surface area nanostructured electrodes with fast charge separation is one of the main challenges for exploring cupric oxide (CuO)-based photocathodes in solar-driven hydrogen production applications. Herein, brand new 1D branched CuO nanowire arrays have been achieved on fluorine-doped tin oxide-coated glass (FTO) through a two-step wet chemical redox reaction. X-ray diffraction patterns, Raman spectra and X-ray photoelectron spectroscopy confirm the pure phase characteristic of the resulting branched CuO. In addition to the enlarged surface area of this advanced functional structure as compared with that of the 1D wire trunk, the charge injection and separation have been improved by rationally controlling the density of defects and size of branches. As a result, the optimized branched CuO exhibits photocurrent as high as 3.6 mA·cm−2 under AM 1.5G (100 mW·cm−2) illumination and 3.0 mA·cm−2 under visible light (λ > 420 nm) at 0.2 V vs. RHE in 0.5 M Na2SO4, which are 2.8- and 3.0-fold greater than those of 1D wire samples, respectively. In addition, the solution-processed approach established herein seems quite favourable for large-scale and low-cost manufacturing.