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ispartof: 2022 IEEE INTERNATIONAL RELIABILITY PHYSICS SYMPOSIUM (IRPS) ispartof: IEEE International Reliability Physics Symposium (IRPS) location:TX, Dallas date:27 Mar - 31 Mar 2022 status: published

Since the first graphene layer was fabricated in the early 2000's, graphene properties have been studied extensively both experimentally and theoretically. However, when comparing the many resistivity models reported in literature, several discrepancies can be found, as well as a number of inconsistencies between formulas. In this paper, we revise the main scattering mechanisms in graphene, based on theory and goodness of fit to in-house experimental data. In particular, a step-by-step evaluation of the interaction between electrons and optical phonons is carried out, where we demonstrate that the process of optical phonon emission scattering is completely suppressed for all low-field applications and all temperatures in the range of interest, as opposed to what is often reported in literature. Finally, we identify the best scattering models based on the goodness of fit to experimental data., Comment: 7 pages, 5 figures, to be submitted to Journal of Applied Physics

The topic of thin films is an area of increasing importance in materials science, electrical engineering and applied solid state physics; with both research and industrial applications in microelectronics, computer manufacturing, and physical devices. Advanced, high-performance computers, high-definition TV, broadband imaging systems, flat-panel displays, robotic systems, and medical electronics and diagnostics are a few examples of the miniaturized device technologies that depend on the utilization of thin film materials. This book presents an in-depth overview of the novel developments made by the scientific leaders in the area of modern dielectric films for advanced microelectronic applications. It contains clear, concise explanations of material science of dielectric films and their problem for device operation, including high-k, low-k, medium-k dielectric films and also specific features and requirements for dielectric films used in the packaging technology. A broad range of related topics are covered, from physical principles to design, fabrication, characterization, and applications of novel dielectric films.

In this work, we present the impact of S/D contact formation, that is, by SiN plasma doping (hydrogen incorporation), metallic reduction (by calcium) and by argon plasma (compositional change) on NBIS instabilities of self-aligned a-IGZO TFTs.

© 2017 IEEE. A novel physically unclonable function (PUF) utilizing the intrinsic randomness of oxide breakdown (BD) positions in CMOS transistors is presented. The advantages of this approach are studied and validated by measurements on test-chips fabricated in a commercial 40nm CMOS process. Experiments show that the required soft BDs can be reliably generated in a sufficiently short period. The randomness of the utilized mechanism shows excellent properties, required for PUF applications: An overall bias of 0.498 and inter-chip hamming distance (HD) of 0.501. Further analysis of the current distributions reveals a dependence of operating voltage on readout resolution and window. Finally, dedicated experiments with external heating and embedded poly-heaters show that these soft BDs are stable and show no read-out errors up to operating temperatures of 600K.

© 2017 IEEE. A novel physically unclonable function (PUF) utilizing the intrinsic randomness of oxide breakdown (BD) positions in CMOS transistors is presented. The advantages of this approach are studied and validated by measurements on test-chips fabricated in a commercial 40nm CMOS process. Experiments show that the required soft BDs can be reliably generated in a sufficiently short period. The randomness of the utilized mechanism shows excellent properties, required for PUF applications: An overall bias of 0.498 and inter-chip hamming distance (HD) of 0.501. Further analysis of the current distributions reveals a dependence of operating voltage on readout resolution and window. Finally, dedicated experiments with external heating and embedded poly-heaters show that these soft BDs are stable and show no read-out errors up to operating temperatures of 600K.

A novel on-chip test circuit architecture to perform BTI characterization of single devices using the Measure-Stress- Measure (MSM) method is designed and simulations were performed to confirm that the design is fully functional. Characterization throughput was maximized using pipelining. A ‘place-and-check’ algorithm was developed to generate optimized pipelining of individual device measurements. The novel pipelining methodology was corroborated with real measurements, in accordance with the generated pipelining sequence and proposed circuit architecture. The results are shown to be consistent with the data obtained from conventional measurement methods and an improvement of 82% was achieved in total BTI characterization time of 4096 devices. ispartof: pages:99-102 ispartof: 2014 IEEE INTERNATIONAL INTEGRATED RELIABILITY WORKSHOP FINAL REPORT (IIRW) vol:2015-February pages:99-102 ispartof: Integrated Reliability Workshop Final Report (IIRW), 2014 IEEE International location:South Lake Tahoe, CA date:12 Oct - 16 Oct 2014 status: published