1. Weak localization in a GaAs heterostructure close to population of the second subband
- Author
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Hansen Je, Poul Erik Lindelof, and Rafael J. Taboryski
- Subjects
Weak localization ,education.field_of_study ,Materials science ,Condensed matter physics ,Magnetoresistance ,Scattering ,Population ,Spin–orbit interaction ,education ,Fermi gas ,Saturation (magnetic) ,Shubnikov–de Haas effect - Abstract
Weak-localization magnetoresistance has been measured as a function of carrier density using a backgate technique. The phase relaxation rate and the spin-orbit relaxation rate have been determined. The dominating contribution to the phase relaxation rate comes from electron-electron interaction, as demonstrated for samples covering densities from 2.5 to 7.5×10 15 m -2 . Interband scattering is found to enhance phase relaxation. A strictly two-dimensional electron gas (2DEG) quenches the spin-orbit relaxation rate in the plane of the 2DEG, 1/τ so xy , whereas the orthogonal part, 1/τ so z appears added to the phase relaxation rate in the interpretation of the weak-localization magnetoresistance, and can be determined as the saturation value of the phase relaxation at low temperatures
- Published
- 1993