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We developed the highly moisture resistance Zinc Oxide films on flexible high gas barrier PEN substrates. After the damp test, changing ratio of sheet resistance were 1.02, this value can be applied the flexible device electrode. We studied the structural, optical and electrical properties of Zinc Oxide films in detail. After a damp test at 60 °C, 95%RH for 1000 h, sheet resistance of 200 nm thickness GIZO film on deposited plastic high gas barrier substrate was 30 ohm/sq., and changing ratio of sheet resistance, before and after damp test value was 1.02.

We proposed fabrication of multilayer transparent electrodes consisted of a stack of surface ITO and metal mesh under layer as an electrical conductor part. The film electrodes have flat and smooth surface morphology and are laminated with the flexible gas barrier films to make flexible conducting substrate. Performance of thin film organic solar cells using this substrate was drastically enhanced from conventional ITO films by its ultra-low surface resistivity.

Structural, electrical and moisture resistant properties of highly transparent conductive polycrystalline Ga and In co-doped ZnO (IGZO) films deposited on high gas barrier plastic substrates and alkali-free glass at below 100 °C by DC magnetron sputtering method were investigated. All the IGZO films in the Ga2O3 concentration is 5.7 wt% (ceramic target) and In2O3 concentration changed from 0 to 20 wt % (ceramic target). We have been studying for the effect of additional In2O3 on moisture resistant of IGZO films. Moisture resistant results showed that when the In2O3 concentration was 10 wt % (ceramic target) was drastically improved compared to GZO films. In addition, the IGZO film applied to the flexible high gas barrier plastic substrate. This plastic flexible IGZO films also showed the excellent moisture resistant. The moisture resistant IGZO film deposited on plastic flexible gas barrier substrates have great potential for use as electrode of flexible sensors, display, lighting and solar cells.

Al–Pd–Mn quasicrystal thin films were prepared by KrF excimer laser ablation for the first time, to our knowledge. The thin films were obtained only when the substrate temperature was lowered to liquid nitrogen temperatures during ablation. The composition of the films was found to agree with that of the target material within a few percent, regardless of the substrate temperature in the rang from -196°C to 300°C.