1. A Silicon Nitride Microring Modulator for High-Performance Photonic Integrated Circuits
- Author
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Karempudi, Venkata Sai Praneeth, Thakkar, Ishan G, and Hastings, Jeffrey Todd
- Subjects
FOS: Computer and information sciences ,Emerging Technologies (cs.ET) ,Computer Science - Emerging Technologies ,FOS: Physical sciences ,Physics - Applied Physics ,Applied Physics (physics.app-ph) ,Physics - Optics ,Optics (physics.optics) - Abstract
The use of the Silicon-on-Insulator (SOI) platform has been prominent for realizing CMOS-compatible, high-performance photonic integrated circuits (PICs). But in recent years, the silicon-nitride-on-silicon-dioxide (SiN-on-SiO$_2$) platform has garnered increasing interest as an alternative, because of its several beneficial properties over the SOI platform, such as low optical losses, high thermo-optic stability, broader wavelength transparency range, and high tolerance to fabrication-process variations. However, SiN-on-SiO$_2$ based active devices, such as modulators, are scarce and lack in desired performance due to the absence of free-carrier-based activity in the SiN material and the complexity of integrating other active materials with SiN-on-SiO$_2$ platform. This shortcoming hinders the SiN-on-SiO$_2$ platform for realizing active PICs. To address this shortcoming, in this article, we demonstrate a SiN-on-SiO$_2$ microring resonator (MRR) based active modulator. Our designed MRR modulator employs an Indium-Tin-Oxide (ITO)-SiO$_2$-ITO thin-film stack as the active upper cladding and leverages the free-carrier assisted, high-amplitude refractive index change in the ITO films to affect a large electro-refractive optical modulation in the device. Based on the electrostatic, transient, and finite difference time domain (FDTD) simulations, conducted using photonics foundry-validated tools, we show that our modulator achieves 450 pm/V resonance modulation efficiency, $\sim$46.2 GHz 3-dB modulation bandwidth, 18 nm free-spectral range (FSR), 0.24 dB insertion loss, and 8.2 dB extinction ratio for optical on-off-keying (OOK) modulation at 30 Gb/s., Comment: arXiv admin note: substantial text overlap with arXiv:2212.06326
- Published
- 2023
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