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A novel LDMOS featuring bulk full gate (BFG) with bulk channel and electron accumulation effect, named BFG-LDMOS, is proposed and investigated. The BFG includes bulk gate oxide (BGO) that is inserted in the ${N}$ -drift and the full gate (FG) that is formed by the wide open base transistor (P-body/ ${N}$ -drift/P + ). The gate potential is extended in the gate- ${N}$ -drift-drain (GND) region, and thus, the bulk channel of the P-body and electron accumulation effect of the ${N}$ -drift in the source- ${N}$ -drift-drain (SND) region is achieved, which significantly reduces the specific ON-resistance ( ${R}_{\text {ON,sp}}$ ). In addition, the P-body, ${N}$ -drift, and N + drain are divided by the BGO, and the P-body/ ${N}$ -drift junction (PN1) sustains the breakdown electric field for both sides, which guarantees the breakdown voltage (BV) like conventional LDMOS. The 3-D simulation results indicate that the BV and ${R}_{\text {ON,sp}}$ are 249 V and 2.93 $\text{m}\Omega \cdot $ cm 2 for the proposed BFG-LDMOS, respectively, and the Baliga’s figure of merit (FoM) is high up to 21 MW/cm 2 , which breaks through the silicon limit of the reduced surface field (RESURF).

Breast cancer (BC) remains a significant threat to the health of women; however, the mechanism underlying the initiation and progression of BC is poorly understood. We analyzed data from the Gene Expression Omnibus database and The Cancer Genome Atlas datasets to identify differentially expressed genes between BC and normal tissues. The roles of dCTP pyrophosphatase 1 (DCTPP1) and quinolinate phosphoribosyltransferase (QPRT) in BC cells were investigated after knocking down or overexpressing the genes. The regulatory effects of Down syndrome cell adhesion molecule antisense RNA 1 (DSCAM-AS1) on DCTPP1 and QPRT expression were determined using luciferase reporter, RNA immunoprecipitation, RNA pull-down, chromatin immunoprecipitation, and fluorescence in situ hybridization assays. DCTPP1 and QPRT were overexpressed in BC compared to normal tissues. Overexpression of DCTPP1 and QPRT was associated with poor BC progression and promoted growth, migration, and invasion of MCF7 and T47D cells but inhibited apoptosis. DSCAM-AS1 increased QPRT expression via competitively binding miRNA-150-5p and miRNA-2467-3p. DSCAM-AS1 promoted DCTPP1 gene transcription by affecting H3K27 acetylation and enhanced DCTPP1 mRNA stability by binding to the 3' untranslated region, which collectively resulted in DCTPP1 overexpression. Overall, DSCAM-AS1 knockdown decreased both DCTPP1 and QPRT expression, inhibiting the growth, migration, and invasion of estrogen receptor-positive BC.

A novel super-junction LDMOS with low resistance channel (LRC), named LRC-LDMOS based on the silicon-on-insulator (SOI) technology is proposed. The LRC is highly doped on the surface of the drift region, which can significantly reduce the specific on resistance (R on,sp) in forward conduction. The charge compensation between the LRC, N-pillar, and P-pillar of the super-junction are adjusted to satisfy the charge balance, which can completely deplete the whole drift, thus the breakdown voltage (BV) is enhanced in reverse blocking. The three-dimensional (3D) simulation results show that the BV and R on,sp of the device can reach 253 V and 15.5 mΩ ⋅ cm2, respectively, and the Baliga’s figure of merit (FOM = BV 2/R on,sp) of 4.1 MW/cm2 is achieved, breaking through the silicon limit.

Over the past fifty years, Internet has continuously created new production modes and consumption patterns, deeply affecting the living vision of human society, impacting the transformation of talent as well. The development of Internet has significantly improved the interconnection and intercommunication capability of human and introduced the world into a brand-new digital economy. Meanwhile, it has also intensified a new round of global talent competition. Internet talents widely exist in every industry and level of social production and living, which makes the knowledge structure, quality, ability of talent have been continuously updated with the fast changing Internet technology and business model. Internet mode evolution triggers new transformation for talent supply and demand. Internet development enriched the values of talent cultivation. Internet impacts on talent development in various ways and comprehensively. All countries in the world should try to construct a positive and good environment to face the talent transformation.