1. In-Plane Ferroelectric Tin Monosulfide and Its Application in a Ferroelectric Analog Synaptic Device
- Author
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Wei Yu, Hwa Seob Choi, In-Hyeok Park, Kian Ping Loh, Chenliang Su, Teng Ma, Lin Wang, Ki Chang Kwon, Yishu Zhang, Ziyu Zhu, Bingbing Tian, and Xiaojie Wang
- Subjects
Materials science ,business.industry ,General Engineering ,General Physics and Astronomy ,Conductance ,Linearity ,chemistry.chemical_element ,02 engineering and technology ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Ferroelectricity ,0104 chemical sciences ,Semiconductor ,Neuromorphic engineering ,chemistry ,Synaptic device ,Optoelectronics ,General Materials Science ,Charge carrier ,0210 nano-technology ,business ,Tin - Abstract
Two-dimensional ferroelectrics is attractive for synaptic device applications because of its low power consumption and amenability to high-density device integration. Here, we demonstrate that tin monosulfide (SnS) films less than 6 nm thick show optimum performance as a semiconductor channel in an in-plane ferroelectric analogue synaptic device, whereas thicker films have a much poorer ferroelectric response due to screening effects by a higher concentration of charge carriers. The SnS ferroelectric device exhibits synaptic behaviors with highly stable room-temperature operation, high linearity in potentiation/depression, long retention, and low cycle-to-cycle/device-to-device variations. The simulated device based on ferroelectric SnS achieves ∼92.1% pattern recognition accuracy in an artificial neural network simulation. By switching the ferroelectric domains partially, multilevel conductance states and the conductance ratio can be obtained, achieving high pattern recognition accuracy.
- Published
- 2020