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1. Degradation Study of InGaAsN p-i-n Solar Cell Under 1-MeV Electron Irradiation

Author

Inès Massiot, S. Parola, R. Rey, Guilhem Almuneau, Sophie Duzellier, Claude Pons, F. Olivie, T. Nuns, Maxime Levillayer, Alexandre Arnoult, Laurent Artola, Corinne Aicardi, T. Le Cocq, Christophe Inguimbert, R. Monflier, ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Centre National d'Études Spatiales [Toulouse] (CNES), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM), Énergie (NRJ), Matériaux (MAT), Équipe MICrosystèmes d'Analyse (LAAS-MICA), Service Instrumentation Conception Caractérisation (LAAS-I2C), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, and Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)

Subjects
MJSC, PL, Nuclear and High Energy Physics, Materials science, Electron, Nitride, dilute nitrides, 01 natural sciences, [SPI.MAT]Engineering Sciences [physics]/Materials, Gallium arsenide, law.invention, Degradation, chemistry.chemical_compound, EQE, law, 0103 physical sciences, Solar cell, Electron beam processing, Irradiation, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, Electrical and Electronic Engineering, Photocurrent, DLTS, irradiation, 010308 nuclear & particles physics, business.industry, electrons, solar cell, Nuclear Energy and Engineering, chemistry, InGaAsN, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, Optoelectronics, Degradation (geology), business
Abstract

International audience; The degradation of InGaAsN pin subcell under 1 MeV electrons irradiation was studied by characterizing solar cells and dilute nitride bulk layers before and after irradiation. Cells are measured to retain more than 94 % of their original photocurrent after 10 15 cm-2 1 MeV-electrons irradiation. Moreover, no significant degradation of the optoelectronic properties is observed after irradiation.

Published
2021

2. Development of 1 eV InGaAsN PIN subcell for MJSC integration and space application

Author

Sophie Duzellier, Guilhem Almuneau, Laurent Artola, Chantal Fontaine, Inès Massiot, Corinne Aicardi, T. Nuns, S. Parola, Alexandre Arnoult, Maxime Levillayer, Christophe Inguimbert, Hélène Carrère, ONERA / DPHY, Université de Toulouse [Toulouse], ONERA-PRES Université de Toulouse, Laboratoire de physique et chimie des nano-objets (LPCNO), Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut de Chimie de Toulouse (ICT), Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Institut de Chimie du CNRS (INC)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Centre National de la Recherche Scientifique (CNRS), Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), Centre National d'Études Spatiales [Toulouse] (CNES), IEEE, Institut de Recherche sur les Systèmes Atomiques et Moléculaires Complexes (IRSAMC), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Chimie de Toulouse (ICT-FR 2599), Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut de Chimie du CNRS (INC)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Institut de Recherche pour le Développement (IRD)-Institut de Chimie du CNRS (INC), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
MJSC, 010302 applied physics, Materials science, Annealing (metallurgy), Analytical chemistry, 02 engineering and technology, Substrate (electronics), Nitride, 021001 nanoscience & nanotechnology, 01 natural sciences, Temperature measurement, [SPI.MAT]Engineering Sciences [physics]/Materials, Gallium arsenide, dilute nitride, chemistry.chemical_compound, Pulmonary surfactant, Molecular beam epitaxial growth, chemistry, 0103 physical sciences, InGaAsN, space applications, [SPI.OPTI]Engineering Sciences [physics]/Optics / Photonic, 1eV cell, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, 0210 nano-technology
Abstract

International audience; This paper reports on the optimization of 1eV dilute nitride solar cells growth conditions. InGaAsN cells were grown by MBE under different conditions (V/III ratio, substrate temperature, surfactant) and were processed without post-growth annealing. Characterization results suggest that the V/III ratio should be kept above 10 and that using Bi as a surfactant does not improve the cell performances. Our best InGaAsN cells exhibit Jsc and Voc values of 7.9 mA/cm 2 and 0.375 V respectively, under AM0> 870 nm and without ARC.

Published
2020

3. Ultrathin PECVD epitaxial Si solar cells on glass via low-temperature transfer process

Author

Martin Foldyna, Anne Gaucher, Philippe Pareige, Inès Massiot, Jean-Luc Maurice, Andrea Cattoni, Pere Roca i Cabarrocas, Emmanuel Cadel, Valerie Depauw, Gilles Patriarche, Stéphane Collin, Ismael Cosme-Bolanos, Wanghua Chen, and Romain Cariou

Subjects
Materials science, Silicon, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Chemical vapor deposition, 010402 general chemistry, Epitaxy, 7. Clean energy, 01 natural sciences, Monocrystalline silicon, Photovoltaics, Plasma-enhanced chemical vapor deposition, Crystalline silicon, Electrical and Electronic Engineering, Renewable Energy, Sustainability and the Environment, business.industry, 021001 nanoscience & nanotechnology, Condensed Matter Physics, 0104 chemical sciences, Electronic, Optical and Magnetic Materials, chemistry, Anodic bonding, Optoelectronics, 0210 nano-technology, business
Abstract

Fabrication of high-quality ultrathin monocrystalline silicon layers and their transfer to low-cost substrates are key steps for flexible electronics and photovoltaics. In this work, we demonstrate a low-temperature and low-cost process for ultrathin silicon solar cells. By using standard plasma-enhanced chemical vapor deposition (PECVD), we grow high-quality epitaxial silicon layers (epi-PECVD) from SiH4/H2 gas mixtures at 175 °C. Using secondary ion mass spectrometry and transmission electron microscopy, we show that the porosity of the epi-PECVD/crystalline silicon interface can be tuned by controlling the hydrogen accumulation there. Moreover, we demonstrate that 13–14% porosity is a threshold above which the interface becomes fragile and can easily be cleaved. Taking advantage of the H-rich interface fragility, we demonstrate the transfer of large areas (∽10 cm2) ultrathin epi-PECVD layers (0.5–5.5 µm) onto glass substrates by anodic bonding and moderate annealing (275–350 °C). The structural properties of transferred layers are assessed, and the first PECVD epitaxial silicon solar cells transferred on glass are characterized. Copyright © 2016 John Wiley & Sons, Ltd.

Published
2016

4. Integrating surface nanotextures into thin crystalline-Si solar cells: The case of a 1μm-thin nanoimprinted heterojunction cell

Author

Ivan Gordon, Pere Roca i Cabarrocas, Twan Bearda, Valerie Depauw, Christos Trompoukis, Inès Massiot, Alexandre Dmitriev, Jef Poortmans, and Wanghua Chen

Subjects
010302 applied physics, Materials science, Silicon, business.industry, chemistry.chemical_element, Heterojunction, 02 engineering and technology, 021001 nanoscience & nanotechnology, 01 natural sciences, Polymer solar cell, Monocrystalline silicon, chemistry, 0103 physical sciences, Optoelectronics, Crystalline silicon, Plasmonic solar cell, Thin film, Photonics, 0210 nano-technology, business
Abstract

Texturing of crystalline silicon at the light wavelength scale is a promising approach for light management in ever thinner cells. However, this approach requires adapting the device design and process, which has so far revealed to be a challenging task. Indeed, successful integration requires compromising the excellent optical properties for preserving the electrical ones. We briefly summarize what has been learned so far in the community and illustrate some of these learnings with the fabrication and improvement of 1-μ m-thin monocrystalline nanotextured silicon solar cells.

Published
2017

5. Metal Nanogrid for Broadband Multiresonant Light-Harvesting in Ultrathin GaAs Layers

Author

Jean-François Guillemoles, Nicolas Vandamme, Inès Massiot, Stéphane Collin, Christophe Dupuis, Aristide Lemaître, and Nathalie Bardou

Subjects
Materials science, business.industry, Surface plasmon, Physics::Optics, Polarization (waves), Atomic and Molecular Physics, and Optics, Electronic, Optical and Magnetic Materials, law.invention, Metal, Condensed Matter::Materials Science, Optics, Semiconductor, law, visual_art, Broadband, Solar cell, visual_art.visual_art_medium, Optoelectronics, Electrical and Electronic Engineering, business, Excitation, Plasmon, Biotechnology
Abstract

Most plasmonic super absorbers use the excitation of surface plasmons to achieve perfect absorption in metal nanostructures. We present a design for an ultrathin metal–semiconductor–metal super absorber where light is mainly absorbed within a flat 25 nm thick GaAs semiconductor layer. The top metal layer is patterned as a two-dimensional grid with a subwavelength period and is covered with a thin embedding dielectric layer. We show numerically multiresonant absorption with low polarization and angular dependence. We experimentally demonstrate optical absorption above 80% over the 450–830 nm spectral range using a gold nanogrid. This work opens perspectives toward ultrathin active plasmonic optoelectronic devices and, in particular, highly efficient ultrathin solar cells.

Published
2014

6. Photonic nanostructures for advanced light trapping in thin crystalline silicon solar cells

Author

Enric Garcia Caurel, Patricia Prod'Homme, Alexandre Dmitriev, Aline Herman, Martin Foldyna, Olivier Deparis, Emmanuel Drouard, Ounsi El Daif, Pere Roca i Cabarrocas, Christian Seassal, Inès Massiot, Kristof Lodewijks, Vladimir Mijkovic, Jef Poortmans, Alexandre Mayer, Jia Liu, Ivan Gordon, Robert Mertens, Valerie Depauw, Babak Heidari, Ismael Cosme, G. Poulain, Islam Abdo, Jérôme Muller, Loïc Lalouat, Regis Orobtchouk, Ki-Dong Lee, Wanghua Chen, Christos Trompoukis, Fabien Mandorlo, and Romain Cariou

Subjects
Materials science, Silicon, chemistry.chemical_element, 02 engineering and technology, 01 natural sciences, 7. Clean energy, law.invention, law, Etching (microfabrication), 0103 physical sciences, Solar cell, Materials Chemistry, Crystalline silicon, Electrical and Electronic Engineering, Thin film, Photonic crystal, 010302 applied physics, business.industry, Surfaces and Interfaces, 021001 nanoscience & nanotechnology, Condensed Matter Physics, Surfaces, Coatings and Films, Electronic, Optical and Magnetic Materials, chemistry, Optoelectronics, Dry etching, Photonics, 0210 nano-technology, business
Abstract

We report on the fabrication, integration, and simulation, both optical and optoelectrical, of two-dimensional photonic nanostructures for advanced light trapping in thin crystalline silicon (c-Si) solar cells. The photonic nanostructures are fabricated by the combination of various lithography (nanoimprint, laser interference, and hole mask colloidal) and etching (dry plasma and wet chemical) techniques. The nanopatterning possibilities thus range from periodic to random corrugations and from inverted nanopyramids to high aspect ratio profiles. Optically, the nanopatterning results in better performance than the standard pyramid texturing, showing a more robust behavior with respect to light incidence angle. Electrically, wet etching results in higher minority carrier lifetimes compared to dry etching. From the integration of the photonic nanostructures into a micron-thin c-Si solar cell certain factors limiting the efficiencies are identified. More precisely: (a) the parasitic absorption is limiting the short circuit current, (b) the conformality of thin-film coatings on the nanopatterned surface is limiting the fill factor, and (c) the material damage from dry etching is limiting the open circuit voltage. From optical simulations, the optimal pattern parameters are identified. From optoelectrical simulations, cell design considerations are discussed, suggesting to position the junction on the opposite side of the nanopattern.

Published
2014

7. Understanding the evolution of the geometry of silicon solar cells

Author

Inès Massiot, Philippe Arguel, Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), and Université Fédérale Toulouse Midi-Pyrénées

Subjects
Science instruction, Solar cell geometry, Photovoltaics engineering, Silicon, Computer science, [SPI.NRJ]Engineering Sciences [physics]/Electric power, 05 social sciences, Photovoltaic system, Process (computing), 050301 education, General Physics and Astronomy, chemistry.chemical_element, Geometry, 7. Clean energy, 01 natural sciences, [PHYS.PHYS.PHYS-ED-PH]Physics [physics]/Physics [physics]/Physics Education [physics.ed-ph], Education, chemistry, 0103 physical sciences, Silicon solar cells, Cell geometry, 010306 general physics, 0503 education, Parametric statistics
Abstract

International audience; Today, solar cells are very familiar to the broad public, and everyone has noticed their particular geometry resembling a square with rounded-off corners. However, the rationale behind this geometry is little known. This paper presents a precise study of the geometry of silicon solar cells and its evolution since their appearance in the early 1960s. Through a parametric approach taking into account different types of constraints, it is shown that the cell geometry is the result of an optimization process depending on both technical and economic aspects. The correlation between the parametric study and historical data shows that the photovoltaic panels that we see today on our roofs have been mainly shaped by the evolution of cost constraints over the past decades.

Published
2019

8. Highly conformal fabrication of nanopatterns on non-planar surfaces

Author

Christos Trompoukis, Inès Massiot, Kristof Lodewijks, Valerie Depauw, and Alexandre Dmitriev

Subjects
Materials science, Fabrication, Silicon, business.industry, chemistry.chemical_element, Nanotechnology, 02 engineering and technology, Surface finish, 010402 general chemistry, 021001 nanoscience & nanotechnology, Electrostatics, 01 natural sciences, 0104 chemical sciences, Planar, chemistry, Photovoltaics, Optoelectronics, General Materials Science, 0210 nano-technology, business, Nanoscopic scale, Microscale chemistry
Abstract

While the number of techniques for patterning materials at the nanoscale exponentially increases, only a handful of methods approach the conformal patterning of strongly non-planar surfaces. Here, using the direct surface self-assembly of colloids by electrostatics, we produce highly conformal bottom-up nanopatterns with a short-range order. We illustrate the potential of this approach by devising functional nanopatterns on highly non-planar substrates such as pyramid-textured silicon substrates and inherently rough polycrystalline films. We further produce functionalized polycrystalline thin-film silicon solar cells with enhanced optical performance. The perspective presented here to pattern essentially any surface at the nanoscale, in particular surfaces with high inherent roughness or with microscale features, opens new possibilities in a wide range of advanced technologies from affordable photovoltaics and optoelectronics to cellular engineering.

Published
2016

9. Sunlight-thin nanophotonic monocrystalline silicon solar cells

Author

Inès Massiot, Jef Poortmans, Christos Trompoukis, Ivan Gordon, Wanghua Chen, Alexandre Dmitriev, Pere Roca i Cabarrocas, and Valerie Depauw

Subjects
Materials science, Passivation, Silicon, Biomedical Engineering, Nanophotonics, chemistry.chemical_element, Bioengineering, 02 engineering and technology, Quantum dot solar cell, 01 natural sciences, Monocrystalline silicon, Photovoltaics, 0103 physical sciences, General Materials Science, Electrical and Electronic Engineering, Absorption (electromagnetic radiation), 010302 applied physics, business.industry, General Chemistry, 021001 nanoscience & nanotechnology, Atomic and Molecular Physics, and Optics, Amorphous solid, chemistry, Optoelectronics, 0210 nano-technology, business
Abstract

Introducing nanophotonics into photovoltaics sets the path for scaling down the surface texture of crystalline-silicon solar cells from the micro-to the nanoscale, allowing to further boost the photon absorption while reducing silicon material loss. However, keeping excellent electrical performance has proven to be very challenging, as the absorber is damaged by the nanotexturing and the sensitivity to the surface recombination is dramatically increased. Here we realize a light-wavelength-scale nanotextured monocrystalline silicon cell with the confirmed efficiency of 8.6% and an effective thickness of only 830 nm. For this we adopt a self-assembled large-area and industry-compatible amorphous ordered nanopatterning, combined with an advanced surface passivation, earning strongly enhanced solar light absorption while retaining efficient electron collection. This prompts the development of highly efficient flexible and semitransparent photovoltaics, based on the industrially mature monocrystalline silicon technology.

Published
2017

10. Towards high-efficiency ultra-thin solar cells with nanopatterned metallic front contact

Author

Christophe Sauvan, Pere Roca i Cabarrocas, Nathalie Bardou, Jean-Luc Pelouard, Nicolas Vandamme, Inès Massiot, Stéphane Collin, Clément Colin, and Philippe Lalanne

Subjects
Monocrystalline silicon, Materials science, business.industry, Energy conversion efficiency, Optoelectronics, Plasmonic solar cell, Hybrid solar cell, Quantum dot solar cell, business, Absorption (electromagnetic radiation), Copper indium gallium selenide solar cells, Polymer solar cell
Abstract

We propose a novel design using multi-resonant absorption to achieve efficient light-trapping in ultra-thin (

Published
2013

11. Broadband light-trapping in ultra-thin nano-structured solar cells

Author

Christophe Dupuis, Negar Naghavi, Isabelle Gérard, Andrea Cattoni, Jean-François Guillemoles, Stéphane Collin, Clément Colin, Nathalie Bardou, Jean-Luc Pelouard, Inès Massiot, and Nicolas Vandamme

Subjects
Materials science, business.industry, Photovoltaic system, Nanophotonics, Physics::Optics, Hybrid solar cell, Quantum dot solar cell, Copper indium gallium selenide solar cells, Polymer solar cell, Gallium arsenide, chemistry.chemical_compound, chemistry, Optoelectronics, Plasmonic solar cell, business
Abstract

Conventional light trapping techniques are inefficient at the sub-wavelength scale. This is the main limitation for the thickness reduction of thin-film solar cells below 500nm. We propose a novel architecture for broadband light absorption in ultra-thin active layers based on plasmonic nano-cavities and multi-resonant mechanism. Strong light enhancement will be shown numerically for photovoltaic materials such as CIGSe and GaAs. First experiments on ultrathin nano-patterned CIGSe solar cells will be presented.

Published
2013

12. Développement de sous-cellules pin InGaAsN à 1 eV pour intégration en MJSC et applications spatiales

Author

Maxime Levillayer, Guilhem Almuneau, Inès Massiot, Alexandre Arnoult, Chantal Fontaine, Laurent Artola, Inguimbert, C., Duzellier, S., Nuns, T., Frederic Pichot, Parola, S., Aicardi, C., Équipe Photonique (LAAS-PHOTO), Laboratoire d'analyse et d'architecture des systèmes (LAAS), Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées-Université Fédérale Toulouse Midi-Pyrénées-Centre National de la Recherche Scientifique (CNRS)-Université Toulouse III - Paul Sabatier (UT3), Université Fédérale Toulouse Midi-Pyrénées-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Institut National des Sciences Appliquées (INSA)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université Fédérale Toulouse Midi-Pyrénées-Université Toulouse - Jean Jaurès (UT2J)-Université Toulouse 1 Capitole (UT1), Université Fédérale Toulouse Midi-Pyrénées, Service Techniques et Équipements Appliqués à la Microélectronique (LAAS-TEAM), ONERA / DPHY, Université de Toulouse [Toulouse], PRES Université de Toulouse-ONERA, Institut d’Electronique et des Systèmes (IES), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Micro électronique, Composants, Systèmes, Efficacité Energétique (M@CSEE), Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS)-Université de Montpellier (UM)-Centre National de la Recherche Scientifique (CNRS), Centre National d'Études Spatiales [Toulouse] (CNES), Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT)-Université de Toulouse (UT)-Institut National des Sciences Appliquées - Toulouse (INSA Toulouse), Institut National des Sciences Appliquées (INSA)-Université de Toulouse (UT)-Institut National des Sciences Appliquées (INSA)-Université Toulouse - Jean Jaurès (UT2J), Université de Toulouse (UT)-Université Toulouse III - Paul Sabatier (UT3), Université de Toulouse (UT)-Centre National de la Recherche Scientifique (CNRS)-Institut National Polytechnique (Toulouse) (Toulouse INP), Université de Toulouse (UT)-Université Toulouse Capitole (UT Capitole), Université de Toulouse (UT), ONERA-PRES Université de Toulouse, and Parola, Stéphanie

Subjects
[SPI.NANO] Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, [SPI.MAT] Engineering Sciences [physics]/Materials, [SPI.NANO]Engineering Sciences [physics]/Micro and nanotechnologies/Microelectronics, ComputingMilieux_MISCELLANEOUS, [SPI.MAT]Engineering Sciences [physics]/Materials
Abstract

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