1. Broadband Cr 3+ , Sn 4+ ‐Doped Oxide Nanophosphors for Infrared Mini Light‐Emitting Diodes
- Author
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Ru-Shi Liu, Wen-Tse Huang, Kuang-Mao Lu, Kang Chieh-Yu, Chia-Wei Yang, Chih-Min Lin, Chiao-Ling Cheng, and Zhen Bao
- Subjects
Materials science ,business.industry ,Infrared ,Doping ,Oxide ,Phosphor ,02 engineering and technology ,General Chemistry ,Mesoporous silica ,010402 general chemistry ,021001 nanoscience & nanotechnology ,01 natural sciences ,Catalysis ,0104 chemical sciences ,law.invention ,chemistry.chemical_compound ,chemistry ,Radiant flux ,law ,Optoelectronics ,0210 nano-technology ,business ,Diode ,Light-emitting diode - Abstract
Light-emitting diodes break barriers of size and performance for displays. With devices becoming smaller, the materials also need to get smaller. Chromium(III)-doped oxide phosphors, which emit near-infrared (NIR) light, have recently been used in small electronic devices. In this work, mesoporous silica nanoparticles were used as nanocarriers. The nanophosphor ZnGa2 O4 :Cr3+ ,Sn4+ formed in the mesopore after sintering. Good dispersity and morphology were performed with average diameters of 71±7 nm. It emitted light at 600-850 nm; the intensity was optimized by tuning the doping ratio of Cr3+ and Sn4+ . Meanwhile, the light conversion efficiency increased from 7.8 % to 37 % and the molar concentration increased from 0.125 m to 0.5 m. The higher radiant flux of 3.3 mW was obtained by operating an input current of 45 mA. However, the NIR nanophosphor showed good performance on mini light-emitting diode chips.
- Published
- 2019