1. Astability versus Bistability in van der Waals Tunnel Diode for Voltage Controlled Oscillator and Memory Applications
- Author
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Takashi Taniguchi, Kausik Majumdar, Nithin Abraham, Kenji Watanabe, and Krishna Murali
- Subjects
Materials science ,Bistability ,FOS: Physical sciences ,General Physics and Astronomy ,Applied Physics (physics.app-ph) ,02 engineering and technology ,010402 general chemistry ,01 natural sciences ,Lattice mismatch ,symbols.namesake ,Voltage-controlled oscillator ,Robustness (computer science) ,Condensed Matter::Superconductivity ,Mesoscale and Nanoscale Physics (cond-mat.mes-hall) ,Physics::Atomic and Molecular Clusters ,Tunnel diode ,General Materials Science ,Physics::Atomic Physics ,Condensed Matter::Quantum Gases ,Condensed Matter - Materials Science ,Random access memory ,Condensed Matter - Mesoscale and Nanoscale Physics ,business.industry ,General Engineering ,Materials Science (cond-mat.mtrl-sci) ,Physics - Applied Physics ,Condensed Matter::Mesoscopic Systems and Quantum Hall Effect ,021001 nanoscience & nanotechnology ,0104 chemical sciences ,Sharp interface ,symbols ,Optoelectronics ,van der Waals force ,0210 nano-technology ,business - Abstract
Van der Waals (vdW) tunnel junctions are attractive due to their atomically sharp interface, gate tunablity, and robustness against lattice mismatch between the successive layers. However, the negative differential resistance (NDR) demonstrated in this class of tunnel diodes often exhibits noisy behaviour with low peak current density, and lacks robustness and repeatability, limiting their practical circuit applications. Here we propose a strategy of using a 1L-WS$_2$ as an optimum tunnel barrier sandwiched in a broken gap tunnel junction of highly doped black phosphorus (BP) and SnSe$_2$. We achieve high yield tunnel diodes exhibiting highly repeatable, ultra-clean, and gate tunable NDR characteristics with a signature of intrinsic oscillation, and a large peak-to-valley current ratio (PVCR) of 3.6 at 300 K (4.6 at 7 K), making them suitable for practical applications. We show that the thermodynamic stability of the vdW tunnel diode circuit can be tuned from astability to bistability by altering the constraint through choosing a voltage or a current bias, respectively. In the astable mode under voltage bias, we demonstrate a compact, voltage controlled oscillator without the need for an external tank circuit. In the bistable mode under current bias, we demonstrate a highly scalable, single element one-bit memory cell that is promising for dense random access memory applications in memory intensive computation architectures.
- Published
- 2020