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Electronic transport through a material depends on the response to local perturbations induced by defects or impurities in the material. The scattering processes can be described in terms of phase shifts and corresponding cross sections. The multiorbital nature of the spinor states in transition metal dichalcogenides would naturally suggest the consideration of a massive Dirac equation to describe the problem, while the parabolic dispersion of its conduction and valence bands would invite a simpler Schr��dinger equation description. Here, we contrast the scattering of massive Dirac particles and Schr��dinger electrons, in order to assess different asymptotic regimes (low and high Fermi energy) for each one of the electronic models and describe their regime of validity or transition. At low energies, where the dispersion is approximately parabolic, the scattering processes are dominated by low angular momentum channels, which results in nearly isotropic scattering amplitudes. On the other hand, the differential cross section at high Fermi energies exhibits clear signatures of the linear band dispersion, as the partial phase shifts approach a non-zero value. We analyze the electronic dynamics by presenting differential cross sections for both attractive and repulsive scattering centers. The dissimilar behavior between Dirac and Schr��dinger carriers points to the limits and conditions over which different descriptions are required for the reliable treatment of scattering processes in these materials.

We explore the nature of the electroluminescence (EL) emission of purely n-doped GaAs/AlGaAs resonant tunneling diodes (RTDs) and the EL evolution with voltage. A singular feature of such a device is unveiled when the electrical output current changes from high to low and the EL on-off ratio is enhanced by 2 orders of magnitude compared to the current on-off ratio. By combining the EL and current properties, we are able to identify two independent impact ionization channels associated with the coherent resonant tunneling current and the incoherent valley current. We also perform the same investigation with an associated series resistance, which induces a bistable electrical output in the system. By simulating a resistance variation for the current-voltage and the EL, we are able to tune the EL on-off ratio by up to 6 orders of magnitude. We further observe that the EL on and off states can be either direct or inverted compared to the tunneling current on and off states. This electroluminescence, combined with the unique RTD properties such as the negative differential resistance (NDR) and high frequency operation, enables the development of high speed functional opto-electronic devices and optical switches., Comment: 6 pages, 6 figures

The original Pascaline was a mechanical calculator able to sum and subtract integers. It encodes information in the angles of mechanical wheels and through a set of gears, and aided by gravity, could perform the calculations. Here, we show that such a concept can be realized in electronics using memory elements such as memristive systems. By using memristive emulators we have demonstrated experimentally the memcomputing version of the mechanical Pascaline, capable of processing and storing the numerical results in the multiple levels of each memristive element. Our result is the first experimental demonstration of multidigit arithmetics with multi-level memory devices that further emphasizes the versatility and potential of memristive systems for future massively-parallel high-density computing architectures.

We report a comprehensive discussion of quantum interference effects due to the finite structure of excitons in quantum rings and their first experimental corroboration observed in the optical recombinations. Anomalous features that appear in the experiments are analyzed according to theoretical models that describe the modulation of the interference pattern by temperature and built-in electric fields., Comment: 6 pages, 7 figures